CA3031880C - Methods and apparati for making thin semiconductor bodies from molten material - Google Patents
Methods and apparati for making thin semiconductor bodies from molten material Download PDFInfo
- Publication number
- CA3031880C CA3031880C CA3031880A CA3031880A CA3031880C CA 3031880 C CA3031880 C CA 3031880C CA 3031880 A CA3031880 A CA 3031880A CA 3031880 A CA3031880 A CA 3031880A CA 3031880 C CA3031880 C CA 3031880C
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- CA
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- Prior art keywords
- melt
- sheet
- silicon
- mold
- mold sheet
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title description 172
- 239000012768 molten material Substances 0.000 title description 99
- 239000000463 material Substances 0.000 claims description 96
- 230000015556 catabolic process Effects 0.000 claims description 2
- 238000006731 degradation reaction Methods 0.000 claims description 2
- 239000000155 melt Substances 0.000 abstract description 202
- 239000010703 silicon Substances 0.000 abstract description 201
- 229910052710 silicon Inorganic materials 0.000 abstract description 199
- 239000007788 liquid Substances 0.000 abstract description 71
- 239000007787 solid Substances 0.000 abstract description 31
- 230000036961 partial effect Effects 0.000 abstract description 5
- 238000007598 dipping method Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 200
- 235000012431 wafers Nutrition 0.000 description 150
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 70
- 230000005499 meniscus Effects 0.000 description 49
- 239000010410 layer Substances 0.000 description 46
- 239000000758 substrate Substances 0.000 description 40
- 239000002346 layers by function Substances 0.000 description 33
- 239000000377 silicon dioxide Substances 0.000 description 29
- 239000007789 gas Substances 0.000 description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 26
- 229910002804 graphite Inorganic materials 0.000 description 25
- 239000010439 graphite Substances 0.000 description 25
- 238000010899 nucleation Methods 0.000 description 25
- 229910021426 porous silicon Inorganic materials 0.000 description 25
- 238000007711 solidification Methods 0.000 description 23
- 230000008023 solidification Effects 0.000 description 23
- 230000006911 nucleation Effects 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 22
- 239000012535 impurity Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 21
- 238000012546 transfer Methods 0.000 description 19
- 230000008901 benefit Effects 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000843 powder Substances 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 238000009736 wetting Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 238000013459 approach Methods 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 230000008014 freezing Effects 0.000 description 12
- 238000007710 freezing Methods 0.000 description 12
- 230000035699 permeability Effects 0.000 description 11
- 239000011148 porous material Substances 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 238000005204 segregation Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 238000009987 spinning Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 230000004927 fusion Effects 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000008204 material by function Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 239000002775 capsule Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000750 progressive effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010408 sweeping Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910017982 Ag—Si Inorganic materials 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- -1 for instance Chemical compound 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002667 nucleating agent Substances 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000007712 rapid solidification Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/44—Moulds or cores; Details thereof or accessories therefor with means for, or specially constructed to facilitate, the removal of articles, e.g. of undercut articles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/068—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20958209P | 2009-03-09 | 2009-03-09 | |
| US61/209,582 | 2009-03-09 | ||
| US22473009P | 2009-07-10 | 2009-07-10 | |
| US61/224,730 | 2009-07-10 | ||
| US23796509P | 2009-08-28 | 2009-08-28 | |
| US61/237,965 | 2009-08-28 | ||
| CA2962682A CA2962682C (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2962682A Division CA2962682C (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA3031880A1 CA3031880A1 (en) | 2010-09-16 |
| CA3031880C true CA3031880C (en) | 2022-05-17 |
Family
ID=42728704
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3031880A Active CA3031880C (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
| CA2754880A Active CA2754880C (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
| CA2962682A Active CA2962682C (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2754880A Active CA2754880C (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
| CA2962682A Active CA2962682C (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
Country Status (12)
| Country | Link |
|---|---|
| US (4) | US20110247549A1 (enExample) |
| EP (1) | EP2406413B1 (enExample) |
| JP (2) | JP5715579B2 (enExample) |
| KR (1) | KR101805096B1 (enExample) |
| CN (1) | CN102421947B (enExample) |
| CA (3) | CA3031880C (enExample) |
| ES (1) | ES2680648T3 (enExample) |
| MX (1) | MX336781B (enExample) |
| MY (1) | MY160016A (enExample) |
| SG (1) | SG173739A1 (enExample) |
| TW (1) | TWI531691B (enExample) |
| WO (1) | WO2010104838A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9050652B2 (en) | 2008-11-14 | 2015-06-09 | Carnegie Mellon University | Methods for casting by a float process and associated apparatuses |
| ES2680648T3 (es) * | 2009-03-09 | 2018-09-10 | 1366 Technologies Inc. | Procedimientos de fabricación de cuerpos semiconductores delgados a partir de material fundido |
| US8685162B2 (en) * | 2010-05-06 | 2014-04-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using gas jets |
| US9267219B2 (en) | 2010-05-06 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Gas-lift pumps for flowing and purifying molten silicon |
| US20120027996A1 (en) * | 2010-07-27 | 2012-02-02 | Glen Bennett Cook | Mold shape to optimize thickness uniformity of silicon film |
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| ES2680648T3 (es) | 2018-09-10 |
| SG173739A1 (en) | 2011-09-29 |
| MX2011009206A (es) | 2012-03-06 |
| EP2406413A1 (en) | 2012-01-18 |
| US8696810B2 (en) | 2014-04-15 |
| US20130036967A1 (en) | 2013-02-14 |
| CA2962682A1 (en) | 2010-09-16 |
| CA2754880C (en) | 2018-07-03 |
| JP2015120635A (ja) | 2015-07-02 |
| CA3031880A1 (en) | 2010-09-16 |
| CN102421947A (zh) | 2012-04-18 |
| JP6030672B2 (ja) | 2016-11-24 |
| US9643342B2 (en) | 2017-05-09 |
| CN102421947B (zh) | 2016-09-28 |
| US20110247549A1 (en) | 2011-10-13 |
| EP2406413A4 (en) | 2014-01-01 |
| TW201040327A (en) | 2010-11-16 |
| MY160016A (en) | 2017-02-15 |
| TWI531691B (zh) | 2016-05-01 |
| US20120067273A1 (en) | 2012-03-22 |
| KR101805096B1 (ko) | 2017-12-05 |
| CA2962682C (en) | 2019-11-26 |
| JP2012519650A (ja) | 2012-08-30 |
| JP5715579B2 (ja) | 2015-05-07 |
| WO2010104838A1 (en) | 2010-09-16 |
| EP2406413B1 (en) | 2018-05-30 |
| MX336781B (es) | 2016-02-02 |
| KR20110139226A (ko) | 2011-12-28 |
| US20140220171A1 (en) | 2014-08-07 |
| US8293009B2 (en) | 2012-10-23 |
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