CN102421947B - 从已熔化材料制造薄半导体本体的方法和装置 - Google Patents

从已熔化材料制造薄半导体本体的方法和装置 Download PDF

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Publication number
CN102421947B
CN102421947B CN201080021254.1A CN201080021254A CN102421947B CN 102421947 B CN102421947 B CN 102421947B CN 201080021254 A CN201080021254 A CN 201080021254A CN 102421947 B CN102421947 B CN 102421947B
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China
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forming surface
silicon
mold
melt
pressure
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Chinese (zh)
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CN102421947A (zh
Inventor
E·M·萨赫斯
R·L·华莱士
E·T·汉特苏
A·M·罗伦斯
G·D·S·赫德尔森
R·荣茨克
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1366 Technologies Inc
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1366 Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/44—Moulds or cores; Details thereof or accessories therefor with means for, or specially constructed to facilitate, the removal of articles, e.g. of undercut articles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN201080021254.1A 2009-03-09 2010-03-09 从已熔化材料制造薄半导体本体的方法和装置 Active CN102421947B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US20958209P 2009-03-09 2009-03-09
US61/209582 2009-03-09
US22473009P 2009-07-10 2009-07-10
US61/224730 2009-07-10
US23796509P 2009-08-28 2009-08-28
US61/237965 2009-08-28
PCT/US2010/026639 WO2010104838A1 (en) 2009-03-09 2010-03-09 Methods and apparati for making thin semiconductor bodies from molten material

Publications (2)

Publication Number Publication Date
CN102421947A CN102421947A (zh) 2012-04-18
CN102421947B true CN102421947B (zh) 2016-09-28

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CN201080021254.1A Active CN102421947B (zh) 2009-03-09 2010-03-09 从已熔化材料制造薄半导体本体的方法和装置

Country Status (12)

Country Link
US (4) US20110247549A1 (enExample)
EP (1) EP2406413B1 (enExample)
JP (2) JP5715579B2 (enExample)
KR (1) KR101805096B1 (enExample)
CN (1) CN102421947B (enExample)
CA (3) CA2962682C (enExample)
ES (1) ES2680648T3 (enExample)
MX (1) MX336781B (enExample)
MY (1) MY160016A (enExample)
SG (1) SG173739A1 (enExample)
TW (1) TWI531691B (enExample)
WO (1) WO2010104838A1 (enExample)

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WO2010104838A1 (en) * 2009-03-09 2010-09-16 1366 Technologies Inc. Methods and apparati for making thin semiconductor bodies from molten material
US8685162B2 (en) * 2010-05-06 2014-04-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using gas jets
US9267219B2 (en) 2010-05-06 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Gas-lift pumps for flowing and purifying molten silicon
US20120027996A1 (en) * 2010-07-27 2012-02-02 Glen Bennett Cook Mold shape to optimize thickness uniformity of silicon film
US20120129293A1 (en) * 2010-11-24 2012-05-24 Sergey Potapenko Methods of making an unsupported article of a semiconducting material using thermally active molds
WO2012075306A2 (en) 2010-12-01 2012-06-07 1366 Technologies Inc. Making semiconductor bodies from molten material using a free-standing interposer sheet
JP5875529B2 (ja) * 2011-01-26 2016-03-02 国立大学法人山口大学 シリコン融液接触部材、その製法、および結晶シリコンの製造方法
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
US9859348B2 (en) 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
WO2014001886A1 (en) 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and orienting/undercooling molds therefor, and electronic device
WO2014001888A1 (en) 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and undercooling molds therefor, and electronic device
US20140097432A1 (en) * 2012-10-09 2014-04-10 Corning Incorporated Sheet of semiconducting material, laminate, and system and methods for forming same
WO2015017098A1 (en) * 2013-07-31 2015-02-05 Christoph Sachs Use of silicon nitride as a substrate and a coating material for the rapid solidification of silicon
CN103924291A (zh) * 2014-04-25 2014-07-16 南昌欧菲光学技术有限公司 一种平板型蓝宝石长晶装置及方法
EP3138130B1 (en) * 2014-04-30 2021-02-24 1366 Technologies Inc. Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions
EP2953158A3 (en) 2014-06-04 2016-02-17 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
KR102520095B1 (ko) * 2015-04-29 2023-04-07 1366 테크놀로지 인코포레이티드 재료가 고갈되고 다시 채워지는 용융된 재료의 포함된 볼륨을 유지하기 위한 방법
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
JP6857517B2 (ja) 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法
JP6915526B2 (ja) * 2017-12-27 2021-08-04 信越半導体株式会社 炭化珪素単結晶の製造方法
AR115182A3 (es) * 2018-10-30 2020-12-09 R Neto S A Intercambiador aéreo geotérmico vertical
US11121125B2 (en) * 2018-12-12 2021-09-14 Micron Technology, Inc. Thermal chamber for a thermal control component
US11334129B2 (en) 2019-12-11 2022-05-17 Micron Technology, Inc. Temperature control component for electronic systems
CN113921639A (zh) * 2020-10-12 2022-01-11 上海晶澳太阳能科技有限公司 硅片及制备方法、电池片、电池切片、电池串及光伏组件
IL318736A (en) 2021-06-16 2025-03-01 Conti Innovation Center Llc Mechanically stacked solar transmissive cells or modules
CN116175930A (zh) * 2021-09-08 2023-05-30 僖昴晰(上海)新材料有限公司 在模具中制作中空流体管道以及制作带有中空流体管道的模具的方法
CN117987932B (zh) * 2024-04-03 2024-06-11 常州臻晶半导体有限公司 一种籽晶粘接烧结的冲压装置及其方法
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

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US5275226A (en) * 1989-03-17 1994-01-04 Arnold J. Cook Method and apparatus for casting

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Also Published As

Publication number Publication date
WO2010104838A1 (en) 2010-09-16
CA2962682C (en) 2019-11-26
SG173739A1 (en) 2011-09-29
MX2011009206A (es) 2012-03-06
CA2754880C (en) 2018-07-03
CA3031880C (en) 2022-05-17
JP2012519650A (ja) 2012-08-30
EP2406413A1 (en) 2012-01-18
TW201040327A (en) 2010-11-16
KR20110139226A (ko) 2011-12-28
US20140220171A1 (en) 2014-08-07
ES2680648T3 (es) 2018-09-10
US8696810B2 (en) 2014-04-15
US20130036967A1 (en) 2013-02-14
US20120067273A1 (en) 2012-03-22
KR101805096B1 (ko) 2017-12-05
CA3031880A1 (en) 2010-09-16
CA2962682A1 (en) 2010-09-16
US20110247549A1 (en) 2011-10-13
US8293009B2 (en) 2012-10-23
US9643342B2 (en) 2017-05-09
EP2406413A4 (en) 2014-01-01
CN102421947A (zh) 2012-04-18
JP5715579B2 (ja) 2015-05-07
EP2406413B1 (en) 2018-05-30
MX336781B (es) 2016-02-02
JP6030672B2 (ja) 2016-11-24
TWI531691B (zh) 2016-05-01
MY160016A (en) 2017-02-15
CA2754880A1 (en) 2010-09-16
JP2015120635A (ja) 2015-07-02

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