JP2018085529A5 - - Google Patents

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Publication number
JP2018085529A5
JP2018085529A5 JP2017253337A JP2017253337A JP2018085529A5 JP 2018085529 A5 JP2018085529 A5 JP 2018085529A5 JP 2017253337 A JP2017253337 A JP 2017253337A JP 2017253337 A JP2017253337 A JP 2017253337A JP 2018085529 A5 JP2018085529 A5 JP 2018085529A5
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JP
Japan
Prior art keywords
island
substrate
crystalline
structure material
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017253337A
Other languages
English (en)
Japanese (ja)
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JP2018085529A (ja
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Publication date
Application filed filed Critical
Publication of JP2018085529A publication Critical patent/JP2018085529A/ja
Publication of JP2018085529A5 publication Critical patent/JP2018085529A5/ja
Pending legal-status Critical Current

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JP2017253337A 2014-06-04 2017-12-28 基板上の結晶性の島の製造方法 Pending JP2018085529A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462007624P 2014-06-04 2014-06-04
US62/007,624 2014-06-04

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2015107915A Division JP6603044B2 (ja) 2014-06-04 2015-05-27 基板上の結晶性の島の製造方法

Publications (2)

Publication Number Publication Date
JP2018085529A JP2018085529A (ja) 2018-05-31
JP2018085529A5 true JP2018085529A5 (enExample) 2018-07-12

Family

ID=52434622

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015107915A Active JP6603044B2 (ja) 2014-06-04 2015-05-27 基板上の結晶性の島の製造方法
JP2017253337A Pending JP2018085529A (ja) 2014-06-04 2017-12-28 基板上の結晶性の島の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2015107915A Active JP6603044B2 (ja) 2014-06-04 2015-05-27 基板上の結晶性の島の製造方法

Country Status (4)

Country Link
US (1) US9396932B2 (enExample)
EP (1) EP2953158A3 (enExample)
JP (2) JP6603044B2 (enExample)
CN (1) CN105304467B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319754B2 (en) * 2014-06-04 2019-06-11 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
EP3244453A1 (en) 2015-10-09 2017-11-15 Diftek Lasers, Inc. An electronic device and method of making thereof
JP6857517B2 (ja) * 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法
WO2018201308A1 (en) * 2017-05-03 2018-11-08 Shenzhen Xpectvision Technology Co., Ltd. Method of making radiation detector

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430150A (en) 1981-08-07 1984-02-07 Texas Instruments Incorporated Production of single crystal semiconductors
US4479847A (en) * 1981-12-30 1984-10-30 California Institute Of Technology Equilibrium crystal growth from substrate confined liquid
US4637855A (en) 1985-04-30 1987-01-20 Texas Instruments Incorporated Process for producing crystalline silicon spheres
JPH0480922A (ja) * 1990-07-24 1992-03-13 Canon Inc 結晶物品の形成方法
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5431127A (en) * 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
US6316278B1 (en) 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
JP4900756B2 (ja) 2002-04-16 2012-03-21 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置、集積回路、および電子機器
JP2005089239A (ja) * 2003-09-17 2005-04-07 Seiko Epson Corp シリコン曲面体の製造方法、シリコン曲面体、デバイス及びデバイスの製造方法
US7353598B2 (en) 2004-11-08 2008-04-08 Alien Technology Corporation Assembly comprising functional devices and method of making same
US8088676B2 (en) 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
WO2008057483A2 (en) 2006-11-03 2008-05-15 Semlux Technologies, Inc. Laser conversion of high purity silicon powder to densified garnular forms
JP2008119929A (ja) * 2006-11-10 2008-05-29 Canon Inc インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法
JP2008143754A (ja) * 2006-12-12 2008-06-26 Union Material Kk 球状シリコン結晶及びその製造方法
EP2099064A1 (en) 2008-03-07 2009-09-09 Technische Universiteit Delft Method for manufacturing a semiconductor device
TW201014937A (en) * 2008-10-06 2010-04-16 Clean Venture 21 Corp Method for producing semiconductor particles
EP2406413B1 (en) 2009-03-09 2018-05-30 1366 Technologies Inc. Methods for making thin semiconductor bodies from molten material
US8846505B2 (en) * 2009-03-09 2014-09-30 Skokie Swift Corporation Method of growing semiconductor micro-crystalline islands on an amorphous substrate
TWI528604B (zh) * 2009-09-15 2016-04-01 無限科技全球公司 發光、光伏或其它電子裝置及系統
WO2012102343A1 (ja) * 2011-01-26 2012-08-02 国立大学法人山口大学 シリコン融液接触部材、その製法、および結晶シリコンの製造方法
US9209019B2 (en) * 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
EP2766926A4 (en) * 2011-10-14 2015-10-14 Diftek Lasers Inc PLANARIZED SEMICONDUCTOR PARTITIONS POSITIONED ON A SUBSTRATE
US8999742B1 (en) * 2013-12-10 2015-04-07 Nthdegree Technologies Worldwide Inc. Silicon microsphere fabrication

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