JP2016517387A5 - - Google Patents

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Publication number
JP2016517387A5
JP2016517387A5 JP2016501740A JP2016501740A JP2016517387A5 JP 2016517387 A5 JP2016517387 A5 JP 2016517387A5 JP 2016501740 A JP2016501740 A JP 2016501740A JP 2016501740 A JP2016501740 A JP 2016501740A JP 2016517387 A5 JP2016517387 A5 JP 2016517387A5
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JP
Japan
Prior art keywords
substrate
solution
solute
nucleation site
kit
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JP2016501740A
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English (en)
Japanese (ja)
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JP6414938B2 (ja
JP2016517387A (ja
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Priority claimed from PCT/US2014/025089 external-priority patent/WO2014151146A1/en
Publication of JP2016517387A publication Critical patent/JP2016517387A/ja
Publication of JP2016517387A5 publication Critical patent/JP2016517387A5/ja
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Publication of JP6414938B2 publication Critical patent/JP6414938B2/ja
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JP2016501740A 2013-03-15 2014-03-12 表面エネルギーを改質した非晶質を使用した溶液からの意図された核形成及び結晶成長 Active JP6414938B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361794821P 2013-03-15 2013-03-15
US61/794,821 2013-03-15
PCT/US2014/025089 WO2014151146A1 (en) 2013-03-15 2014-03-12 Directed nucleation and crystal growth from solution using surface energy modified amorphous materials

Publications (3)

Publication Number Publication Date
JP2016517387A JP2016517387A (ja) 2016-06-16
JP2016517387A5 true JP2016517387A5 (enExample) 2017-09-14
JP6414938B2 JP6414938B2 (ja) 2018-10-31

Family

ID=51530176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016501740A Active JP6414938B2 (ja) 2013-03-15 2014-03-12 表面エネルギーを改質した非晶質を使用した溶液からの意図された核形成及び結晶成長

Country Status (8)

Country Link
US (1) US9193664B2 (enExample)
EP (1) EP2969093B8 (enExample)
JP (1) JP6414938B2 (enExample)
CA (1) CA2904340C (enExample)
DK (1) DK2969093T3 (enExample)
ES (1) ES2749603T3 (enExample)
PL (1) PL2969093T3 (enExample)
WO (1) WO2014151146A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583187B2 (en) 2015-03-28 2017-02-28 Intel Corporation Multistage set procedure for phase change memory
US9777025B2 (en) * 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
CN113373499B (zh) * 2021-05-21 2023-08-15 湖北理工学院 一种观赏性花饰化学艺术晶体的制备方法
CN118248248B (zh) * 2024-05-28 2024-08-23 烟台国工智能科技有限公司 一种无机晶体条件生成分析方法及装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146985B2 (ja) * 1996-06-26 2001-03-19 住友金属工業株式会社 結晶成長方法および結晶成長用固体素子
JP3297702B2 (ja) * 1996-09-03 2002-07-02 住友金属工業株式会社 結晶成長用装置
JP3007972B1 (ja) * 1999-03-05 2000-02-14 大阪大学長 有機光学単結晶の形成方法及び有機光学単結晶
GB2362754A (en) 2000-05-25 2001-11-28 Nanogate Ltd A method of growing single crystals
WO2002101127A1 (en) 2001-06-08 2002-12-19 Syrrx, Inc. In situ crystal growth and analysis
US7122083B2 (en) 2002-04-02 2006-10-17 E. I. Du Pont De Nemours And Company Apparatus and process used in growing crystals
JP2006036565A (ja) * 2004-07-23 2006-02-09 Ricoh Co Ltd 有機単結晶付基板の製造方法、有機単結晶付基板及び有機単結晶付基板の製造装置
US7763471B2 (en) * 2006-04-18 2010-07-27 Advanced Liquid Logic, Inc. Method of electrowetting droplet operations for protein crystallization
US9138659B2 (en) 2010-08-23 2015-09-22 Massachusetts Institute Of Technology Compositions, methods, and systems relating to controlled crystallization and/or nucleation of molecular species
US9822467B2 (en) 2011-11-15 2017-11-21 Massachusetts Institute Of Technology Methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species

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