NO20052263D0 - Fremgangsmate for a danne ferroelektriske tynnfilmer, bruk av fremgangsmaten og minne med ferroelektrisk oligomer som minnemateriale - Google Patents

Fremgangsmate for a danne ferroelektriske tynnfilmer, bruk av fremgangsmaten og minne med ferroelektrisk oligomer som minnemateriale

Info

Publication number
NO20052263D0
NO20052263D0 NO20052263A NO20052263A NO20052263D0 NO 20052263 D0 NO20052263 D0 NO 20052263D0 NO 20052263 A NO20052263 A NO 20052263A NO 20052263 A NO20052263 A NO 20052263A NO 20052263 D0 NO20052263 D0 NO 20052263D0
Authority
NO
Norway
Prior art keywords
memory
ferroelectric
thin films
oligomer
forming
Prior art date
Application number
NO20052263A
Other languages
English (en)
Other versions
NO20052263L (no
NO324809B1 (no
Inventor
Hans Gude Gudesen
Nicklas Johansson
Geirr I Leistad
Haisheng Xu
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20052263A priority Critical patent/NO324809B1/no
Publication of NO20052263D0 publication Critical patent/NO20052263D0/no
Priority to EP06747629A priority patent/EP1879928A4/en
Priority to US11/919,584 priority patent/US20090026513A1/en
Priority to CNA2006800250301A priority patent/CN101218265A/zh
Priority to RU2007145102/04A priority patent/RU2007145102A/ru
Priority to PCT/NO2006/000162 priority patent/WO2006121336A1/en
Priority to JP2008511073A priority patent/JP2008540841A/ja
Priority to KR1020077028854A priority patent/KR20080009748A/ko
Publication of NO20052263L publication Critical patent/NO20052263L/no
Publication of NO324809B1 publication Critical patent/NO324809B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/22—Vinylidene fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2506/00—Halogenated polymers
    • B05D2506/10—Fluorinated polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
NO20052263A 2005-05-10 2005-05-10 Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer NO324809B1 (no)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NO20052263A NO324809B1 (no) 2005-05-10 2005-05-10 Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
EP06747629A EP1879928A4 (en) 2005-05-10 2006-05-02 PROCESS FOR FORMING FERROELECTRIC THIN FILMS, USE OF THE METHOD AND MEMORY WITH FERROELECTRIC OLIGOMEREM STORAGE MATERIAL
US11/919,584 US20090026513A1 (en) 2005-05-10 2006-05-02 Method for forming ferroelectric thin films, the use of the method and a memory with a ferroelectric oligomer memory material
CNA2006800250301A CN101218265A (zh) 2005-05-10 2006-05-02 形成铁电薄膜的方法、该方法的用途以及具有铁电低聚物存储材料的存储器
RU2007145102/04A RU2007145102A (ru) 2005-05-10 2006-05-02 Способ формирования тонких ферроэлектрических пленок, его применение и запоминающее устройство на основе ферроэлектрического олигомерного запоминающего материала
PCT/NO2006/000162 WO2006121336A1 (en) 2005-05-10 2006-05-02 A method for forming ferroelectric thin films, the use of the method and a memory with a ferroelectric oligomer memory material
JP2008511073A JP2008540841A (ja) 2005-05-10 2006-05-02 強誘電性薄膜を形成するための方法、該方法の使用、及び強誘電性オリゴマーメモリ材料を有するメモリ
KR1020077028854A KR20080009748A (ko) 2005-05-10 2006-05-02 강유전성 박막을 형성하기 위한 방법, 상기 방법의 사용 및강유전성 올리고머 메모리 물질을 갖는 메모리

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20052263A NO324809B1 (no) 2005-05-10 2005-05-10 Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer

Publications (3)

Publication Number Publication Date
NO20052263D0 true NO20052263D0 (no) 2005-05-10
NO20052263L NO20052263L (no) 2006-11-13
NO324809B1 NO324809B1 (no) 2007-12-10

Family

ID=35277014

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20052263A NO324809B1 (no) 2005-05-10 2005-05-10 Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer

Country Status (8)

Country Link
US (1) US20090026513A1 (no)
EP (1) EP1879928A4 (no)
JP (1) JP2008540841A (no)
KR (1) KR20080009748A (no)
CN (1) CN101218265A (no)
NO (1) NO324809B1 (no)
RU (1) RU2007145102A (no)
WO (1) WO2006121336A1 (no)

Families Citing this family (20)

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US8226876B1 (en) * 2006-05-09 2012-07-24 The United States Of America As Represented By The Secretary Of The Navy Solid state extrusion of semi-crystalline fluoro-polymer films
JP4124243B2 (ja) * 2006-06-05 2008-07-23 セイコーエプソン株式会社 記憶素子の製造方法、記憶素子、記憶装置、および電子機器、ならびにトランジスタの製造方法
JP4835485B2 (ja) * 2007-03-26 2011-12-14 ダイキン工業株式会社 強誘電性の積層体とその製造方法
US7573063B1 (en) * 2008-05-15 2009-08-11 Xerox Corporation Organic thin film transistors
WO2011078791A1 (en) * 2009-12-23 2011-06-30 Agency For Science, Technology And Research A method of forming a vdf oligomer or co-oligomer film on a substrate and an electrical device comprising the vdf oligomer or co-oligomer film on the substrate
US10515768B2 (en) 2012-04-04 2019-12-24 Lyten, Inc. Apparatus and associated methods
US9324995B2 (en) 2012-04-04 2016-04-26 Nokia Technologies Oy Apparatus and associated methods
US9362565B2 (en) * 2012-04-04 2016-06-07 Nokia Technologies Oy Apparatus and associated methods
FR3004854B1 (fr) * 2013-04-19 2015-04-17 Arkema France Dispositif de memoire ferroelectrique
CN103521406B (zh) * 2013-10-23 2016-03-02 湖南源创高科工业技术有限公司 一种电子设备的涂覆方法及其使用的装置
JP2016155904A (ja) * 2015-02-24 2016-09-01 ユニチカ株式会社 尿素オリゴマー薄膜及びその製造方法
DE102017106431A1 (de) * 2017-03-24 2018-09-27 Aixtron Se Vorrichtung und Verfahren zum Herabsetzen des Wasserpartialdrucks in einer OVPD-Beschichtungseinrichtung
CN107154401A (zh) * 2017-05-17 2017-09-12 南京大学 一种铁电高分子相变实现信息存储的方法及其存储器
US10700093B1 (en) 2018-12-20 2020-06-30 Sandisk Technologies Llc Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
CN110112289B (zh) * 2019-04-11 2023-06-06 东南大学 分子铁电相变存储器
CN110983286A (zh) * 2019-12-30 2020-04-10 江阴慕达斯真空设备有限公司 一种镀膜产品用降温罩
US11222920B2 (en) 2020-02-04 2022-01-11 Western Digital Technologies, Inc. Magnetic device including multiferroic regions and methods of forming the same
JP2022011406A (ja) * 2020-06-30 2022-01-17 セイコーエプソン株式会社 圧電素子、液体吐出ヘッド、およびプリンター
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same

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JPH04175475A (ja) * 1990-11-09 1992-06-23 Hitachi Ltd 低温トラップとターボ分子ポンプとの複合真空排気ポンプ
JPH06341375A (ja) * 1993-06-02 1994-12-13 Ulvac Kuraio Kk 低温トラップ
JPH1056149A (ja) * 1996-08-09 1998-02-24 Sony Corp 強誘電体メモリ及びその製造方法
JP3485297B2 (ja) * 1997-03-17 2004-01-13 松下電器産業株式会社 薄膜の製造方法及び製造装置
NO309500B1 (no) * 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
NO20005980L (no) * 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
JP2002299572A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体装置およびその製造方法
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
JP4755800B2 (ja) * 2002-08-20 2011-08-24 関西ティー・エル・オー株式会社 フッ化ビニリデンオリゴマー薄膜製造方法及び該薄膜を用いたデバイス

Also Published As

Publication number Publication date
US20090026513A1 (en) 2009-01-29
KR20080009748A (ko) 2008-01-29
NO20052263L (no) 2006-11-13
NO324809B1 (no) 2007-12-10
EP1879928A4 (en) 2009-12-02
EP1879928A1 (en) 2008-01-23
WO2006121336A1 (en) 2006-11-16
RU2007145102A (ru) 2009-06-20
CN101218265A (zh) 2008-07-09
JP2008540841A (ja) 2008-11-20

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