DK2969093T3 - Dirigeret kimdannelse og krystalvækst fra opløsning ved anvendelse af overfladeenergimodificerede amorfe materialer - Google Patents
Dirigeret kimdannelse og krystalvækst fra opløsning ved anvendelse af overfladeenergimodificerede amorfe materialer Download PDFInfo
- Publication number
- DK2969093T3 DK2969093T3 DK14768350T DK14768350T DK2969093T3 DK 2969093 T3 DK2969093 T3 DK 2969093T3 DK 14768350 T DK14768350 T DK 14768350T DK 14768350 T DK14768350 T DK 14768350T DK 2969093 T3 DK2969093 T3 DK 2969093T3
- Authority
- DK
- Denmark
- Prior art keywords
- amorphe
- materials
- solution
- crystal growth
- surface energy
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
- C07C69/84—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
- C07C69/86—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
- B01D9/0063—Control or regulation
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/48—Separation; Purification; Stabilisation; Use of additives
- C07C67/52—Separation; Purification; Stabilisation; Use of additives by change in the physical state, e.g. crystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
- C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/08—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by cooling of the solution
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361794821P | 2013-03-15 | 2013-03-15 | |
| PCT/US2014/025089 WO2014151146A1 (en) | 2013-03-15 | 2014-03-12 | Directed nucleation and crystal growth from solution using surface energy modified amorphous materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2969093T3 true DK2969093T3 (da) | 2019-10-28 |
Family
ID=51530176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK14768350T DK2969093T3 (da) | 2013-03-15 | 2014-03-12 | Dirigeret kimdannelse og krystalvækst fra opløsning ved anvendelse af overfladeenergimodificerede amorfe materialer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9193664B2 (enExample) |
| EP (1) | EP2969093B8 (enExample) |
| JP (1) | JP6414938B2 (enExample) |
| CA (1) | CA2904340C (enExample) |
| DK (1) | DK2969093T3 (enExample) |
| ES (1) | ES2749603T3 (enExample) |
| PL (1) | PL2969093T3 (enExample) |
| WO (1) | WO2014151146A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9583187B2 (en) | 2015-03-28 | 2017-02-28 | Intel Corporation | Multistage set procedure for phase change memory |
| US9777025B2 (en) * | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| CN113373499B (zh) * | 2021-05-21 | 2023-08-15 | 湖北理工学院 | 一种观赏性花饰化学艺术晶体的制备方法 |
| CN118248248B (zh) * | 2024-05-28 | 2024-08-23 | 烟台国工智能科技有限公司 | 一种无机晶体条件生成分析方法及装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3146985B2 (ja) * | 1996-06-26 | 2001-03-19 | 住友金属工業株式会社 | 結晶成長方法および結晶成長用固体素子 |
| JP3297702B2 (ja) * | 1996-09-03 | 2002-07-02 | 住友金属工業株式会社 | 結晶成長用装置 |
| JP3007972B1 (ja) * | 1999-03-05 | 2000-02-14 | 大阪大学長 | 有機光学単結晶の形成方法及び有機光学単結晶 |
| GB2362754A (en) | 2000-05-25 | 2001-11-28 | Nanogate Ltd | A method of growing single crystals |
| WO2002101127A1 (en) | 2001-06-08 | 2002-12-19 | Syrrx, Inc. | In situ crystal growth and analysis |
| US7122083B2 (en) | 2002-04-02 | 2006-10-17 | E. I. Du Pont De Nemours And Company | Apparatus and process used in growing crystals |
| JP2006036565A (ja) * | 2004-07-23 | 2006-02-09 | Ricoh Co Ltd | 有機単結晶付基板の製造方法、有機単結晶付基板及び有機単結晶付基板の製造装置 |
| US7763471B2 (en) * | 2006-04-18 | 2010-07-27 | Advanced Liquid Logic, Inc. | Method of electrowetting droplet operations for protein crystallization |
| US9138659B2 (en) | 2010-08-23 | 2015-09-22 | Massachusetts Institute Of Technology | Compositions, methods, and systems relating to controlled crystallization and/or nucleation of molecular species |
| US9822467B2 (en) | 2011-11-15 | 2017-11-21 | Massachusetts Institute Of Technology | Methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species |
-
2014
- 2014-03-12 DK DK14768350T patent/DK2969093T3/da active
- 2014-03-12 EP EP14768350.2A patent/EP2969093B8/en active Active
- 2014-03-12 CA CA2904340A patent/CA2904340C/en active Active
- 2014-03-12 JP JP2016501740A patent/JP6414938B2/ja active Active
- 2014-03-12 WO PCT/US2014/025089 patent/WO2014151146A1/en not_active Ceased
- 2014-03-12 ES ES14768350T patent/ES2749603T3/es active Active
- 2014-03-12 PL PL14768350T patent/PL2969093T3/pl unknown
- 2014-03-12 US US14/207,267 patent/US9193664B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9193664B2 (en) | 2015-11-24 |
| EP2969093B8 (en) | 2019-11-27 |
| US20140275611A1 (en) | 2014-09-18 |
| EP2969093B1 (en) | 2019-07-24 |
| WO2014151146A1 (en) | 2014-09-25 |
| JP6414938B2 (ja) | 2018-10-31 |
| JP2016517387A (ja) | 2016-06-16 |
| ES2749603T3 (es) | 2020-03-23 |
| EP2969093A1 (en) | 2016-01-20 |
| CA2904340A1 (en) | 2014-09-25 |
| EP2969093A4 (en) | 2016-12-21 |
| PL2969093T3 (pl) | 2020-03-31 |
| CA2904340C (en) | 2019-09-17 |
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