DK2969093T3 - Dirigeret kimdannelse og krystalvækst fra opløsning ved anvendelse af overfladeenergimodificerede amorfe materialer - Google Patents

Dirigeret kimdannelse og krystalvækst fra opløsning ved anvendelse af overfladeenergimodificerede amorfe materialer Download PDF

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Publication number
DK2969093T3
DK2969093T3 DK14768350T DK14768350T DK2969093T3 DK 2969093 T3 DK2969093 T3 DK 2969093T3 DK 14768350 T DK14768350 T DK 14768350T DK 14768350 T DK14768350 T DK 14768350T DK 2969093 T3 DK2969093 T3 DK 2969093T3
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DK
Denmark
Prior art keywords
amorphe
materials
solution
crystal growth
surface energy
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DK14768350T
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Danish (da)
English (en)
Inventor
Andrew H Bond
Kevin M Schaab
Original Assignee
Denovx Llc
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Publication of DK2969093T3 publication Critical patent/DK2969093T3/da

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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C07C69/84Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
    • C07C69/86Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl groups
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D9/00Crystallisation
    • B01D9/0063Control or regulation
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00Preparation of carboxylic acid esters
    • C07C67/48Separation; Purification; Stabilisation; Use of additives
    • C07C67/52Separation; Purification; Stabilisation; Use of additives by change in the physical state, e.g. crystallisation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54Organic compounds
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/06Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/08Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by cooling of the solution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK14768350T 2013-03-15 2014-03-12 Dirigeret kimdannelse og krystalvækst fra opløsning ved anvendelse af overfladeenergimodificerede amorfe materialer DK2969093T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361794821P 2013-03-15 2013-03-15
PCT/US2014/025089 WO2014151146A1 (en) 2013-03-15 2014-03-12 Directed nucleation and crystal growth from solution using surface energy modified amorphous materials

Publications (1)

Publication Number Publication Date
DK2969093T3 true DK2969093T3 (da) 2019-10-28

Family

ID=51530176

Family Applications (1)

Application Number Title Priority Date Filing Date
DK14768350T DK2969093T3 (da) 2013-03-15 2014-03-12 Dirigeret kimdannelse og krystalvækst fra opløsning ved anvendelse af overfladeenergimodificerede amorfe materialer

Country Status (8)

Country Link
US (1) US9193664B2 (enExample)
EP (1) EP2969093B8 (enExample)
JP (1) JP6414938B2 (enExample)
CA (1) CA2904340C (enExample)
DK (1) DK2969093T3 (enExample)
ES (1) ES2749603T3 (enExample)
PL (1) PL2969093T3 (enExample)
WO (1) WO2014151146A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583187B2 (en) 2015-03-28 2017-02-28 Intel Corporation Multistage set procedure for phase change memory
US9777025B2 (en) * 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
CN113373499B (zh) * 2021-05-21 2023-08-15 湖北理工学院 一种观赏性花饰化学艺术晶体的制备方法
CN118248248B (zh) * 2024-05-28 2024-08-23 烟台国工智能科技有限公司 一种无机晶体条件生成分析方法及装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146985B2 (ja) * 1996-06-26 2001-03-19 住友金属工業株式会社 結晶成長方法および結晶成長用固体素子
JP3297702B2 (ja) * 1996-09-03 2002-07-02 住友金属工業株式会社 結晶成長用装置
JP3007972B1 (ja) * 1999-03-05 2000-02-14 大阪大学長 有機光学単結晶の形成方法及び有機光学単結晶
GB2362754A (en) 2000-05-25 2001-11-28 Nanogate Ltd A method of growing single crystals
WO2002101127A1 (en) 2001-06-08 2002-12-19 Syrrx, Inc. In situ crystal growth and analysis
US7122083B2 (en) 2002-04-02 2006-10-17 E. I. Du Pont De Nemours And Company Apparatus and process used in growing crystals
JP2006036565A (ja) * 2004-07-23 2006-02-09 Ricoh Co Ltd 有機単結晶付基板の製造方法、有機単結晶付基板及び有機単結晶付基板の製造装置
US7763471B2 (en) * 2006-04-18 2010-07-27 Advanced Liquid Logic, Inc. Method of electrowetting droplet operations for protein crystallization
US9138659B2 (en) 2010-08-23 2015-09-22 Massachusetts Institute Of Technology Compositions, methods, and systems relating to controlled crystallization and/or nucleation of molecular species
US9822467B2 (en) 2011-11-15 2017-11-21 Massachusetts Institute Of Technology Methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species

Also Published As

Publication number Publication date
US9193664B2 (en) 2015-11-24
EP2969093B8 (en) 2019-11-27
US20140275611A1 (en) 2014-09-18
EP2969093B1 (en) 2019-07-24
WO2014151146A1 (en) 2014-09-25
JP6414938B2 (ja) 2018-10-31
JP2016517387A (ja) 2016-06-16
ES2749603T3 (es) 2020-03-23
EP2969093A1 (en) 2016-01-20
CA2904340A1 (en) 2014-09-25
EP2969093A4 (en) 2016-12-21
PL2969093T3 (pl) 2020-03-31
CA2904340C (en) 2019-09-17

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