JP6414938B2 - 表面エネルギーを改質した非晶質を使用した溶液からの意図された核形成及び結晶成長 - Google Patents
表面エネルギーを改質した非晶質を使用した溶液からの意図された核形成及び結晶成長 Download PDFInfo
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- JP6414938B2 JP6414938B2 JP2016501740A JP2016501740A JP6414938B2 JP 6414938 B2 JP6414938 B2 JP 6414938B2 JP 2016501740 A JP2016501740 A JP 2016501740A JP 2016501740 A JP2016501740 A JP 2016501740A JP 6414938 B2 JP6414938 B2 JP 6414938B2
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- nucleation
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- amorphous
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
- C07C69/84—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
- C07C69/86—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl groups
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
- B01D9/0063—Control or regulation
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/48—Separation; Purification; Stabilisation; Use of additives
- C07C67/52—Separation; Purification; Stabilisation; Use of additives by change in the physical state, e.g. crystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
- C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/08—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by cooling of the solution
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361794821P | 2013-03-15 | 2013-03-15 | |
| US61/794,821 | 2013-03-15 | ||
| PCT/US2014/025089 WO2014151146A1 (en) | 2013-03-15 | 2014-03-12 | Directed nucleation and crystal growth from solution using surface energy modified amorphous materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016517387A JP2016517387A (ja) | 2016-06-16 |
| JP2016517387A5 JP2016517387A5 (enExample) | 2017-09-14 |
| JP6414938B2 true JP6414938B2 (ja) | 2018-10-31 |
Family
ID=51530176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016501740A Active JP6414938B2 (ja) | 2013-03-15 | 2014-03-12 | 表面エネルギーを改質した非晶質を使用した溶液からの意図された核形成及び結晶成長 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9193664B2 (enExample) |
| EP (1) | EP2969093B8 (enExample) |
| JP (1) | JP6414938B2 (enExample) |
| CA (1) | CA2904340C (enExample) |
| DK (1) | DK2969093T3 (enExample) |
| ES (1) | ES2749603T3 (enExample) |
| PL (1) | PL2969093T3 (enExample) |
| WO (1) | WO2014151146A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9583187B2 (en) | 2015-03-28 | 2017-02-28 | Intel Corporation | Multistage set procedure for phase change memory |
| US9777025B2 (en) * | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| CN113373499B (zh) * | 2021-05-21 | 2023-08-15 | 湖北理工学院 | 一种观赏性花饰化学艺术晶体的制备方法 |
| CN118248248B (zh) * | 2024-05-28 | 2024-08-23 | 烟台国工智能科技有限公司 | 一种无机晶体条件生成分析方法及装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3146985B2 (ja) * | 1996-06-26 | 2001-03-19 | 住友金属工業株式会社 | 結晶成長方法および結晶成長用固体素子 |
| JP3297702B2 (ja) * | 1996-09-03 | 2002-07-02 | 住友金属工業株式会社 | 結晶成長用装置 |
| JP3007972B1 (ja) * | 1999-03-05 | 2000-02-14 | 大阪大学長 | 有機光学単結晶の形成方法及び有機光学単結晶 |
| GB2362754A (en) | 2000-05-25 | 2001-11-28 | Nanogate Ltd | A method of growing single crystals |
| WO2002101127A1 (en) | 2001-06-08 | 2002-12-19 | Syrrx, Inc. | In situ crystal growth and analysis |
| US7122083B2 (en) | 2002-04-02 | 2006-10-17 | E. I. Du Pont De Nemours And Company | Apparatus and process used in growing crystals |
| JP2006036565A (ja) * | 2004-07-23 | 2006-02-09 | Ricoh Co Ltd | 有機単結晶付基板の製造方法、有機単結晶付基板及び有機単結晶付基板の製造装置 |
| US7763471B2 (en) * | 2006-04-18 | 2010-07-27 | Advanced Liquid Logic, Inc. | Method of electrowetting droplet operations for protein crystallization |
| US9138659B2 (en) | 2010-08-23 | 2015-09-22 | Massachusetts Institute Of Technology | Compositions, methods, and systems relating to controlled crystallization and/or nucleation of molecular species |
| US9822467B2 (en) | 2011-11-15 | 2017-11-21 | Massachusetts Institute Of Technology | Methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species |
-
2014
- 2014-03-12 DK DK14768350T patent/DK2969093T3/da active
- 2014-03-12 EP EP14768350.2A patent/EP2969093B8/en active Active
- 2014-03-12 CA CA2904340A patent/CA2904340C/en active Active
- 2014-03-12 JP JP2016501740A patent/JP6414938B2/ja active Active
- 2014-03-12 WO PCT/US2014/025089 patent/WO2014151146A1/en not_active Ceased
- 2014-03-12 ES ES14768350T patent/ES2749603T3/es active Active
- 2014-03-12 PL PL14768350T patent/PL2969093T3/pl unknown
- 2014-03-12 US US14/207,267 patent/US9193664B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9193664B2 (en) | 2015-11-24 |
| EP2969093B8 (en) | 2019-11-27 |
| US20140275611A1 (en) | 2014-09-18 |
| EP2969093B1 (en) | 2019-07-24 |
| WO2014151146A1 (en) | 2014-09-25 |
| JP2016517387A (ja) | 2016-06-16 |
| ES2749603T3 (es) | 2020-03-23 |
| DK2969093T3 (da) | 2019-10-28 |
| EP2969093A1 (en) | 2016-01-20 |
| CA2904340A1 (en) | 2014-09-25 |
| EP2969093A4 (en) | 2016-12-21 |
| PL2969093T3 (pl) | 2020-03-31 |
| CA2904340C (en) | 2019-09-17 |
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