JP2012069927A5 - - Google Patents
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- Publication number
- JP2012069927A5 JP2012069927A5 JP2011180526A JP2011180526A JP2012069927A5 JP 2012069927 A5 JP2012069927 A5 JP 2012069927A5 JP 2011180526 A JP2011180526 A JP 2011180526A JP 2011180526 A JP2011180526 A JP 2011180526A JP 2012069927 A5 JP2012069927 A5 JP 2012069927A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- base substrate
- semiconductor
- base
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims 26
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000010438 heat treatment Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 238000007664 blowing Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011180526A JP2012069927A (ja) | 2010-08-23 | 2011-08-22 | Ｓｏｉ基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010186594 | 2010-08-23 | ||
| JP2010186594 | 2010-08-23 | ||
| JP2011180526A JP2012069927A (ja) | 2010-08-23 | 2011-08-22 | Ｓｏｉ基板の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012069927A JP2012069927A (ja) | 2012-04-05 |
| JP2012069927A5 true JP2012069927A5 (enExample) | 2014-10-02 |
Family
ID=45594394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011180526A Withdrawn JP2012069927A (ja) | 2010-08-23 | 2011-08-22 | Ｓｏｉ基板の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120045883A1 (enExample) |
| JP (1) | JP2012069927A (enExample) |
| SG (2) | SG2014010508A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6270450B2 (ja) * | 2013-12-13 | 2018-01-31 | キヤノン株式会社 | 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法 |
| US9299600B2 (en) * | 2014-07-28 | 2016-03-29 | United Microelectronics Corp. | Method for repairing an oxide layer and method for manufacturing a semiconductor structure applying the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3501768B2 (ja) * | 2001-04-18 | 2004-03-02 | 株式会社ガソニックス | 基板熱処理装置およびフラットパネルデバイスの製造方法 |
| JP4285244B2 (ja) * | 2004-01-08 | 2009-06-24 | 株式会社Ｓｕｍｃｏ | Ｓｏｉウェーハの作製方法 |
| JP2006080314A (ja) * | 2004-09-09 | 2006-03-23 | Canon Inc | 結合基板の製造方法 |
| FR2892230B1 (fr) * | 2005-10-19 | 2008-07-04 | Soitec Silicon On Insulator | Traitement d'une couche de germamium |
| US7601271B2 (en) * | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
| US7763502B2 (en) * | 2007-06-22 | 2010-07-27 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device |
| JP5548395B2 (ja) * | 2008-06-25 | 2014-07-16 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
-
2011
- 2011-08-16 US US13/210,711 patent/US20120045883A1/en not_active Abandoned
- 2011-08-18 SG SG2014010508A patent/SG2014010508A/en unknown
- 2011-08-18 SG SG2011059797A patent/SG178691A1/en unknown
- 2011-08-22 JP JP2011180526A patent/JP2012069927A/ja not_active Withdrawn
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