CN105304467B - 制造基板上的晶体岛的方法 - Google Patents

制造基板上的晶体岛的方法 Download PDF

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Publication number
CN105304467B
CN105304467B CN201510295774.6A CN201510295774A CN105304467B CN 105304467 B CN105304467 B CN 105304467B CN 201510295774 A CN201510295774 A CN 201510295774A CN 105304467 B CN105304467 B CN 105304467B
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China
Prior art keywords
substrate
island material
particles
island
islands
Prior art date
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Expired - Fee Related
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CN201510295774.6A
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English (en)
Chinese (zh)
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CN105304467A (zh
Inventor
道格拉斯·R·迪卡尔
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Diftek Lasers Inc
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Diftek Lasers Inc
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Publication of CN105304467A publication Critical patent/CN105304467A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN201510295774.6A 2014-06-04 2015-06-02 制造基板上的晶体岛的方法 Expired - Fee Related CN105304467B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462007624P 2014-06-04 2014-06-04
US62/007,624 2014-06-04

Publications (2)

Publication Number Publication Date
CN105304467A CN105304467A (zh) 2016-02-03
CN105304467B true CN105304467B (zh) 2018-12-18

Family

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Family Applications (1)

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CN201510295774.6A Expired - Fee Related CN105304467B (zh) 2014-06-04 2015-06-02 制造基板上的晶体岛的方法

Country Status (4)

Country Link
US (1) US9396932B2 (enExample)
EP (1) EP2953158A3 (enExample)
JP (2) JP6603044B2 (enExample)
CN (1) CN105304467B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319754B2 (en) * 2014-06-04 2019-06-11 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
EP3244453A1 (en) 2015-10-09 2017-11-15 Diftek Lasers, Inc. An electronic device and method of making thereof
JP6857517B2 (ja) * 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法
EP3619555B1 (en) * 2017-05-03 2023-11-29 Shenzhen Xpectvision Technology Co., Ltd. Method of making radiation detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102695914A (zh) * 2009-09-15 2012-09-26 无限科技全球公司 发光、光伏或其它电子装置及系统以及制造其之方法

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US4430150A (en) 1981-08-07 1984-02-07 Texas Instruments Incorporated Production of single crystal semiconductors
US4479847A (en) 1981-12-30 1984-10-30 California Institute Of Technology Equilibrium crystal growth from substrate confined liquid
US4637855A (en) 1985-04-30 1987-01-20 Texas Instruments Incorporated Process for producing crystalline silicon spheres
JPH0480922A (ja) * 1990-07-24 1992-03-13 Canon Inc 結晶物品の形成方法
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5431127A (en) 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
US6316278B1 (en) 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
JP4900756B2 (ja) 2002-04-16 2012-03-21 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置、集積回路、および電子機器
JP2005089239A (ja) * 2003-09-17 2005-04-07 Seiko Epson Corp シリコン曲面体の製造方法、シリコン曲面体、デバイス及びデバイスの製造方法
US7353598B2 (en) 2004-11-08 2008-04-08 Alien Technology Corporation Assembly comprising functional devices and method of making same
US8088676B2 (en) 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
WO2008057483A2 (en) 2006-11-03 2008-05-15 Semlux Technologies, Inc. Laser conversion of high purity silicon powder to densified garnular forms
JP2008119929A (ja) * 2006-11-10 2008-05-29 Canon Inc インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法
JP2008143754A (ja) * 2006-12-12 2008-06-26 Union Material Kk 球状シリコン結晶及びその製造方法
EP2099064A1 (en) 2008-03-07 2009-09-09 Technische Universiteit Delft Method for manufacturing a semiconductor device
TW201014937A (en) * 2008-10-06 2010-04-16 Clean Venture 21 Corp Method for producing semiconductor particles
US8846505B2 (en) * 2009-03-09 2014-09-30 Skokie Swift Corporation Method of growing semiconductor micro-crystalline islands on an amorphous substrate
WO2010104838A1 (en) 2009-03-09 2010-09-16 1366 Technologies Inc. Methods and apparati for making thin semiconductor bodies from molten material
JP5875529B2 (ja) * 2011-01-26 2016-03-02 国立大学法人山口大学 シリコン融液接触部材、その製法、および結晶シリコンの製造方法
CN103858221B (zh) 2011-10-14 2017-02-15 迪夫泰克激光公司 位于衬底上的平坦化半导体颗粒
US9209019B2 (en) * 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102695914A (zh) * 2009-09-15 2012-09-26 无限科技全球公司 发光、光伏或其它电子装置及系统以及制造其之方法

Also Published As

Publication number Publication date
JP2018085529A (ja) 2018-05-31
US20150357192A1 (en) 2015-12-10
HK1215618A1 (zh) 2016-09-02
EP2953158A2 (en) 2015-12-09
EP2953158A3 (en) 2016-02-17
US9396932B2 (en) 2016-07-19
JP2015229632A (ja) 2015-12-21
JP6603044B2 (ja) 2019-11-06
CN105304467A (zh) 2016-02-03

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