HK1215618A1 - 製造基板上的晶體島的方法 - Google Patents

製造基板上的晶體島的方法

Info

Publication number
HK1215618A1
HK1215618A1 HK16103547.4A HK16103547A HK1215618A1 HK 1215618 A1 HK1215618 A1 HK 1215618A1 HK 16103547 A HK16103547 A HK 16103547A HK 1215618 A1 HK1215618 A1 HK 1215618A1
Authority
HK
Hong Kong
Prior art keywords
substrate
crystalline island
fabricating crystalline
fabricating
island
Prior art date
Application number
HK16103547.4A
Other languages
English (en)
Inventor
‧迪卡爾 道格拉斯‧
Original Assignee
Diftek Lasers Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diftek Lasers Inc filed Critical Diftek Lasers Inc
Publication of HK1215618A1 publication Critical patent/HK1215618A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
HK16103547.4A 2014-06-04 2016-03-28 製造基板上的晶體島的方法 HK1215618A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201462007624P 2014-06-04 2014-06-04

Publications (1)

Publication Number Publication Date
HK1215618A1 true HK1215618A1 (zh) 2016-09-02

Family

ID=52434622

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16103547.4A HK1215618A1 (zh) 2014-06-04 2016-03-28 製造基板上的晶體島的方法

Country Status (5)

Country Link
US (1) US9396932B2 (zh)
EP (1) EP2953158A3 (zh)
JP (2) JP6603044B2 (zh)
CN (1) CN105304467B (zh)
HK (1) HK1215618A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319754B2 (en) 2014-06-04 2019-06-11 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
EP3244453A1 (en) 2015-10-09 2017-11-15 Diftek Lasers, Inc. An electronic device and method of making thereof
JP6857517B2 (ja) * 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法
CN110537111B (zh) * 2017-05-03 2024-02-02 深圳帧观德芯科技有限公司 辐射检测器的制作方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430150A (en) 1981-08-07 1984-02-07 Texas Instruments Incorporated Production of single crystal semiconductors
US4479847A (en) 1981-12-30 1984-10-30 California Institute Of Technology Equilibrium crystal growth from substrate confined liquid
US4637855A (en) 1985-04-30 1987-01-20 Texas Instruments Incorporated Process for producing crystalline silicon spheres
JPH0480922A (ja) * 1990-07-24 1992-03-13 Canon Inc 結晶物品の形成方法
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5431127A (en) 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
US6316278B1 (en) 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
JP4900756B2 (ja) 2002-04-16 2012-03-21 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置、集積回路、および電子機器
JP2005089239A (ja) * 2003-09-17 2005-04-07 Seiko Epson Corp シリコン曲面体の製造方法、シリコン曲面体、デバイス及びデバイスの製造方法
US7353598B2 (en) 2004-11-08 2008-04-08 Alien Technology Corporation Assembly comprising functional devices and method of making same
US8088676B2 (en) 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
WO2008057483A2 (en) 2006-11-03 2008-05-15 Semlux Technologies, Inc. Laser conversion of high purity silicon powder to densified garnular forms
JP2008119929A (ja) * 2006-11-10 2008-05-29 Canon Inc インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法
EP2099064A1 (en) 2008-03-07 2009-09-09 Technische Universiteit Delft Method for manufacturing a semiconductor device
US8846505B2 (en) * 2009-03-09 2014-09-30 Skokie Swift Corporation Method of growing semiconductor micro-crystalline islands on an amorphous substrate
CA2754880C (en) 2009-03-09 2018-07-03 1366 Technologies Inc. Methods and apparati for making thin semiconductor bodies from molten material
TWI539631B (zh) * 2009-09-15 2016-06-21 無限科技全球公司 製造發光、光伏或其它電子裝置及系統的方法
CA2825772A1 (en) * 2011-01-26 2012-08-02 Yamaguchi University Silicon melt contact member, process for production thereof, and process for production of crystalline silicon
US9209019B2 (en) * 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
JP6084226B2 (ja) 2011-10-14 2017-02-22 ディフテック レーザーズ インコーポレイテッド 基板上に位置付けられる平坦化された半導体粒子
US8999742B1 (en) * 2013-12-10 2015-04-07 Nthdegree Technologies Worldwide Inc. Silicon microsphere fabrication

Also Published As

Publication number Publication date
JP2015229632A (ja) 2015-12-21
EP2953158A2 (en) 2015-12-09
US20150357192A1 (en) 2015-12-10
JP2018085529A (ja) 2018-05-31
CN105304467A (zh) 2016-02-03
US9396932B2 (en) 2016-07-19
EP2953158A3 (en) 2016-02-17
JP6603044B2 (ja) 2019-11-06
CN105304467B (zh) 2018-12-18

Similar Documents

Publication Publication Date Title
SG11201610771SA (en) Method of manufacturing a substrate
SG10201509454YA (en) Wafer producing method
EP3203496A4 (en) Method for producing patterned substrate
EP3136975B8 (en) Pre-doped solid substrate for intravascular devices
SG10201509475VA (en) Wafer producing method
EP3203497A4 (en) Method for producing patterned substrate
HK1212101A1 (zh) 製造半導體器件的方法
EP3327731A4 (en) METHOD FOR PRODUCING A FLEXIBLE SUBSTRATE
EP3168862A4 (en) Semiconductor substrate and semiconductor substrate production method
HUE051760T2 (hu) Eljárás félvezetõ modul elõállítására
SG10201509471YA (en) Wafer producing method
EP3168865A4 (en) Array substrate manufacturing method
HK1218990A1 (zh) 製作多晶片圖像傳感器的方法
GB2541146B (en) Method of manufacturing a germanium-on-insulator substrate
EP3101160A4 (en) Semiconductor substrate manufacturing method
SG10201509458RA (en) Wafer producing method
SG11201607286TA (en) Method for manufacturing bonded wafer
PT2974822T (pt) Método de divisão de substratos semicondutores finos
EP3089205A4 (en) Soi substrate manufacturing method and soi substrate
PL2927017T5 (pl) Sposób pokrywania substratu
HK1215618A1 (zh) 製造基板上的晶體島的方法
SG11201603148VA (en) Method for bonding substrates
GB201415119D0 (en) Method for fabricating a semiconductor structure
EP3200219A4 (en) Soi wafer manufacturing method
GB201701519D0 (en) Substrate manufacture