ES2575382T3 - Fabricación de cuerpos semiconductores a partir de material fundido utilizando una chapa de interposición auto-sostenida - Google Patents

Fabricación de cuerpos semiconductores a partir de material fundido utilizando una chapa de interposición auto-sostenida Download PDF

Info

Publication number
ES2575382T3
ES2575382T3 ES11845655.7T ES11845655T ES2575382T3 ES 2575382 T3 ES2575382 T3 ES 2575382T3 ES 11845655 T ES11845655 T ES 11845655T ES 2575382 T3 ES2575382 T3 ES 2575382T3
Authority
ES
Spain
Prior art keywords
ceramic sheet
self
supporting
molten material
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES11845655.7T
Other languages
English (en)
Inventor
Ralf Jonczyk
Emanuel M. Sachs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
1366 Technologies Inc
Original Assignee
1366 Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 1366 Technologies Inc filed Critical 1366 Technologies Inc
Application granted granted Critical
Publication of ES2575382T3 publication Critical patent/ES2575382T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/4535—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application applied as a solution, emulsion, dispersion or suspension
    • C04B41/4539—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application applied as a solution, emulsion, dispersion or suspension as a emulsion, dispersion or suspension
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
    • C04B41/5096—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Procedimiento para realizar un cuerpo semiconductor (419) comprendiendo el procedimiento las etapas de: a. proporcionar un material semiconductor fundido (413), que presenta una superficie (415); b. proporcionar un molde poroso (45), que comprende una superficie de conformación (46); c. proporcionar un chapa cerámica auto sostenida (430) entre la superficie de conformación (46) y el material fundido (413); d. poner en contacto la superficie de conformación (46) con la chapa cerámica (430) y la chapa cerámica (430) con la superficie (415) del material fundido (413) durante un cierto período de contacto), de tal modo que un cuerpo (419) de material semiconductor (413) se solidifica en la chapa cerámica (430); y e. retirar el cuerpo solidificado (419) del contacto con el material semiconductor fundido (413) mientras se encuentra todavía en contacto con la chapa cerámica (430), en el que la chapa cerámica (430) es porosa y preferentemente el grado de porosidad se encuentra comprendido entre el 1 por ciento y el 80 %.
ES11845655.7T 2010-12-01 2011-12-01 Fabricación de cuerpos semiconductores a partir de material fundido utilizando una chapa de interposición auto-sostenida Active ES2575382T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41869910P 2010-12-01 2010-12-01
US418699P 2010-12-01
PCT/US2011/062914 WO2012075306A2 (en) 2010-12-01 2011-12-01 Making semiconductor bodies from molten material using a free-standing interposer sheet

Publications (1)

Publication Number Publication Date
ES2575382T3 true ES2575382T3 (es) 2016-06-28

Family

ID=46172577

Family Applications (1)

Application Number Title Priority Date Filing Date
ES11845655.7T Active ES2575382T3 (es) 2010-12-01 2011-12-01 Fabricación de cuerpos semiconductores a partir de material fundido utilizando una chapa de interposición auto-sostenida

Country Status (11)

Country Link
US (1) US9419167B2 (es)
EP (1) EP2647032B1 (es)
JP (1) JP5970469B2 (es)
KR (1) KR101889858B1 (es)
CN (1) CN103380481B (es)
CA (1) CA2819144C (es)
ES (1) ES2575382T3 (es)
MY (1) MY180243A (es)
SG (1) SG190288A1 (es)
TW (1) TWI667700B (es)
WO (1) WO2012075306A2 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008041250A1 (de) * 2008-08-13 2010-02-25 Ers Electronic Gmbh Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern
US9948539B2 (en) 2014-08-29 2018-04-17 The Nielsen Company (Us), Llc Methods and apparatus to predict end of streaming media using a prediction model
US11018068B2 (en) 2018-07-06 2021-05-25 Butterfly Network, Inc. Methods and apparatuses for packaging an ultrasound-on-a-chip
CN111755321A (zh) * 2020-05-20 2020-10-09 嘉兴市轩禾园艺技术有限公司 多晶硅半导体薄膜衬底的制备方法
KR102813653B1 (ko) * 2020-12-30 2025-05-27 엘지디스플레이 주식회사 디스플레이 모듈 및 이를 포함한 디스플레이 장치
KR102813181B1 (ko) * 2020-12-31 2025-05-26 엘지디스플레이 주식회사 디스플레이 모듈 및 이를 포함한 디스플레이 장치
KR102815348B1 (ko) * 2020-12-31 2025-05-29 엘지디스플레이 주식회사 디스플레이 모듈 및 이를 포함한 디스플레이 장치
IL309370B2 (en) 2021-06-16 2025-07-01 Conti Spe Llc Mechanically stacked solar transmissive cells or modules
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3903841A (en) 1974-08-22 1975-09-09 Gte Laboratories Inc Vacuum holder in epitaxial growth apparatus
US4777153A (en) 1986-05-06 1988-10-11 Washington Research Foundation Process for the production of porous ceramics using decomposable polymeric microspheres and the resultant product
JPS63215506A (ja) * 1987-02-27 1988-09-08 Sankusu Kk 多結晶シリコンの製造方法
JPH09506328A (ja) * 1993-12-08 1997-06-24 マサチューセッツ・インスティテュート・オブ・テクノロジー 注型工具
CN1387676A (zh) * 1999-09-09 2002-12-25 联合讯号公司 用于集成电路平面化的改进装置和方法
JP2001121413A (ja) * 1999-10-21 2001-05-08 Toshiba Mach Co Ltd 平板状の被加工材の保持方法
FR2807338B1 (fr) 2000-04-11 2002-11-29 Commissariat Energie Atomique Paroi poreuse pour former une couche gazeuse de sustentation
JP2003054932A (ja) 2001-08-23 2003-02-26 Sharp Corp 半導体基板の製造装置、半導体基板およびその製造方法ならびに太陽電池
WO2004012257A1 (en) * 2002-07-31 2004-02-05 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers
US7407550B2 (en) * 2002-10-18 2008-08-05 Evergreen Solar, Inc. Method and apparatus for crystal growth
NO326797B1 (no) * 2005-06-10 2009-02-16 Elkem As Fremgangsmate og apparat for raffinering av smeltet materiale
US20070295385A1 (en) * 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a substantially inorganic protective layer
US8633483B2 (en) * 2007-06-26 2014-01-21 Massachusetts Institute Of Technology Recrystallization of semiconductor wafers in a thin film capsule and related processes
US7720321B2 (en) * 2007-07-20 2010-05-18 General Electric Company Fiber optic sensor and method for making
US8062704B2 (en) * 2007-08-02 2011-11-22 Motech Americas, Llc Silicon release coating, method of making same, and method of using same
JP5715579B2 (ja) * 2009-03-09 2015-05-07 １３６６ テクノロジーズ インク． 薄い半導体本体を溶融物質から作成するための方法及び装置

Also Published As

Publication number Publication date
EP2647032B1 (en) 2016-03-09
KR20130132514A (ko) 2013-12-04
EP2647032A4 (en) 2014-07-09
WO2012075306A3 (en) 2013-07-25
CA2819144C (en) 2019-06-04
TW201232642A (en) 2012-08-01
CN103380481B (zh) 2018-04-06
US20140113156A1 (en) 2014-04-24
JP2014507360A (ja) 2014-03-27
KR101889858B1 (ko) 2018-08-20
CA2819144A1 (en) 2012-06-07
EP2647032A2 (en) 2013-10-09
WO2012075306A2 (en) 2012-06-07
US9419167B2 (en) 2016-08-16
JP5970469B2 (ja) 2016-08-17
TWI667700B (zh) 2019-08-01
MY180243A (en) 2020-11-25
SG190288A1 (en) 2013-06-28
CN103380481A (zh) 2013-10-30

Similar Documents

Publication Publication Date Title
ES2575382T3 (es) Fabricación de cuerpos semiconductores a partir de material fundido utilizando una chapa de interposición auto-sostenida
JP2012153893A5 (es)
MX2021001813A (es) Aglomerantes y composiciones de cubiertas de moldeo por inversion.
EA201291219A1 (ru) Ячеистая гибочная форма
AR061244A1 (es) Delaminacion de lentes reducida durante la fabricacion de lentes oftalmicas
JP2012519650A5 (es)
MY150535A (en) Wettable hydrogel materials for use in ophthalmic applications and method
ES2635392T3 (es) Procedimiento y dispositivo de fabricación de un artículo de vidrio hueco
GB201120331D0 (en) Contact lens manufacturing method
BRPI0906434A2 (pt) Macromonômero de polissiloxano hidrofílico, método de produzir o mesmo, homopolímero, material de lente oftálmica, lente oftálmica, e, lente de contato
TW200733460A (en) Method for preparing functional film
MX2016010146A (es) Conformacion en tres etapas de lamina de vidrio con corvatura transversal.
JP2015096310A5 (es)
EP2025709A4 (en) PREPARATION COMPOSITION FOR POROUS MEMBRANE, PROCESS FOR PREPARATION COMPOSITION, POROUS MEMBRANE, METHOD FOR PRODUCING THE POROUS MEMBRANE AND SEMICONDUCTOR DEVICE
AR117174A1 (es) Procedimiento de fabricación por adición de material de un soporte inorgánico de filtración, a partir de una composición termofusible, y la membrana así obtenida
MY174038A (en) Honeycomb shaped porous ceramic body, manufacturing method for same, and honeycomb shaped ceramic separation membrane structure
MX2015013024A (es) Molde refractario y metodo de fabricacion.
RU2017144082A (ru) Устройство для формования целлюлозной массы и формы, используемые в этом устройстве
WO2018104205A3 (en) Supporting solution for "in air" geometries in 3d additive manufacturing
MY159687A (en) Mold-releasing film and method for manufacturing light emitting diode
MX2016004731A (es) Aparato de fabricacion de componente de seccion transversal en forma de sombrero y metodo de fabricacion.
SG142217A1 (en) Molding die, intermediate member, and method of manufacture of substrate
JP2014188771A (ja) 懸垂碍子成形型
AR071320A1 (es) Producto ceramico refractario y molde asociado
FR2914925B1 (fr) Solution utilisee dans la fabrication d'un materiau semi-conducteur poreux et procede de fabrication dudit materiau