JP5970469B2 - 自立式介在シートを使用して溶融物質から半導体を作成する方法 - Google Patents
自立式介在シートを使用して溶融物質から半導体を作成する方法 Download PDFInfo
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 6
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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Description
a.表面を有する溶融半導体物質を提供するステップと、
b.形成表面を有する多孔性モールドを提供するステップと、
c.前記形成表面と前記溶融物質との間に自立式セラミックシートを提供するステップと、
d.前記形成表面を前記セラミックシートに接触させ、半導体物質本体が前記セラミックシート上で凝固するように、接触時間の間、前記セラミックシートを前記溶融物質表面に接触させるステップと、
e.前記セラミックシートに接触させた状態で、前記溶融半導体物質との接触から前記凝固体を取り外すステップと、
を含むことを特徴とする方法。
物質の相互接続されたネットワークを備え、10ミクロン未満のME厚並びに第1表面及び対応面(obverse surface)を有し、固体物質が、半導体を形成するのに十分な接触時間の間、少なくとも約1400℃で溶融半導体との接触に耐えることが可能であり、約5ppmw未満の遷移金属を有することを特徴とする自立式多孔性セラミック体。
a.形成表面を有する多孔性モールドと、
b.第1及び第2表面を有する自立式多孔性耐熱セラミックシートであって、前記第1表面で前記モールドの前記形成表面に固定された、自立式多孔性耐熱セラミックシートと、
c.前記セラミックシートの前記第2表面に固定された、溶融量の半導体物質から直接的に形成された半導体と、
を備えることを特徴とするアセンブリ。
a.形成表面を備える多孔性モールドと、
b.前記形成表面に対面して自立式セラミックシートを保持するように構成された保持機構であって、前記セラミックシートが前記形成表面から離れて吊り下がって前記セラミックシートが接触位置で溶融物質の表面に接触可能であり、且つ、前記形成表面を前記接触位置の前記セラミックシートの対応面に接触するように運搬可能である、保持機構と、
c.前記接触位置での圧力が前記溶融物質表面での圧力よりも低いように、差圧形態を提供するように構成された構造と、を備えることを特徴とする装置。
Claims (27)
- 半導体を製造する方法であって、
a.表面を有する溶融半導体物質を提供するステップと、
b.形成表面を有する多孔性モールドを提供するステップと、
c.前記形成表面と前記溶融物質との間に自立式セラミックシートを提供するステップと、
d.前記形成表面を前記セラミックシートに接触させ、半導体物質本体が前記セラミックシート上で凝固するように、接触時間の間、前記セラミックシートを前記溶融物質表面に接触させるステップと、
e.前記セラミックシートに接触させた状態で、前記溶融半導体物質との接触から前記凝固体を取り外すステップと、
を含むことを特徴とする方法。 - 前記半導体物質はシリコンを含むことを特徴とする請求項1に記載の方法。
- 前記形成表面の少なくとも一部での圧力が前記溶融物質表面での圧力よりも低いように、差圧形態を提供するステップをさらに含み、前記接触時間の少なくとも一部の間、前記差圧形態が存在することを特徴とする請求項1に記載の方法。
- 前記接触時間の少なくとも一部の間、前記半導体物質の融点以下の温度で、前記形成表面の少なくとも一部を提供するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記差圧形態の度合を減少させるステップをさらに含み、これにより、前記セラミックシート及び前記凝固体の少なくとも一方で前記形成表面から離脱することに貢献することを特徴とする請求項3に記載の方法。
- 前記セラミックシートを提供するステップは、前記セラミックシートを前記形成表面上に提供することを含むことを特徴とする請求項1に記載の方法。
- 前記セラミックシートを前記形成表面にクランプするステップをさらに含むことを特徴とする請求項6に記載の方法。
- 前記形成表面と前記溶融物質との間に少なくとも1つの追加のセラミックシートを提供するステップをさらに含むことを特徴とする請求項7に記載の方法。
- 前記セラミックシートをクランプするステップは、前記セラミックシートが前記形成表面から離れて吊り下がって前記セラミックシートが接触位置で前記溶融物質に接触するように前記セラミックシートをクランプし、その後、前記形成表面が前記接触位置の前記セラミックシートの対応面に接触することを含むことを特徴とする請求項7に記載の方法。
- 少なくとも2つのセラミックシートの2つが互いに異なる組成を有することを特徴とする請求項8に記載の方法。
- 少なくとも2つの隣接するセラミックシートは、互いに強力に付着しない物質から構成されていることを特徴とする請求項8に記載の方法。
- 前記形成表面の少なくとも一部での圧力が、前記形成表面から離れて対面する前記セラミックシートの面での圧力よりも低いように差圧形態を提供することにより、前記セラミックシートを前記形成表面に固定するステップをさらに含むことを特徴とする請求項6に記載の方法。
- 前記セラミックシートは、シリカ、窒化ケイ素、オキシ窒化ケイ素、オキシ炭化ケイ素、炭化ケイ素、炭窒化ケイ素、オキシ炭窒化ケイ素、アルミナ、ムライト及び窒化ホウ素からなる群から選択されることを特徴とする請求項1に記載の方法。
- 前記セラミックシートは、1〜15ミクロンの質量等価厚を有することを特徴とする請求項1に記載の方法。
- 前記セラミックシートは、柔軟性を有していることを特徴とする請求項1に記載の方法。
- 前記セラミックシートは多孔性であることを特徴とする請求項1に記載の方法。
- 前記セラミックシートは、1ミクロンから100ミクロンの間の径を有する開口を有することを特徴とする請求項16に記載の方法。
- 前記セラミックシートは、5ppmw未満の遷移金属を有することを特徴とする請求項1に記載の方法。
- 前記セラミックシートは、シリコン半導体の凝固に十分な接触時間の間、有意な劣化なしに、少なくとも1400℃の温度に耐えることが可能であることを特徴とする請求項1に記載の方法。
- 前記セラミックシートは、融合物質を備えることを特徴とする請求項1に記載の方法。
- 前記融合物質は、針形状粒子から融合されることを特徴とする請求項20に記載の方法。
- 前記セラミックシートの物質が、前記半導体の粒を核形成することにおいて、前記形成表面の物質よりも低い傾向を有していることを特徴とする請求項1に記載の方法。
- 前記セラミックシートの多孔性の度合いが1%から80%であることを特徴とする請求項16に記載の方法。
- 前記セラミックシートは、2〜5ミクロンの質量等価厚を有することを特徴とする請求項14に記載の方法。
- 前記セラミックシートの柔軟性は、全く破断を形成することなく、325mmよりも小さい半径に湾曲されるシート性能によって特徴付けられることを特徴とする請求項15に記載の方法。
- 前記セラミックシートの柔軟性は、全く破断を形成することなく、150mmよりも小さい半径に湾曲されるシート性能によって特徴付けられることを特徴とする請求項15に記載の方法。
- 前記セラミックシートの柔軟性は、全く破断を形成することなく、2mmよりも小さい半径に湾曲されるシート性能によって特徴付けられることを特徴とする請求項15に記載の方法。
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PCT/US2011/062914 WO2012075306A2 (en) | 2010-12-01 | 2011-12-01 | Making semiconductor bodies from molten material using a free-standing interposer sheet |
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EP (1) | EP2647032B1 (ja) |
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US9948539B2 (en) | 2014-08-29 | 2018-04-17 | The Nielsen Company (Us), Llc | Methods and apparatus to predict end of streaming media using a prediction model |
AU2019297412A1 (en) * | 2018-07-06 | 2021-01-28 | Butterfly Network, Inc. | Methods and apparatuses for packaging an ultrasound-on-a-chip |
CN111755321A (zh) * | 2020-05-20 | 2020-10-09 | 嘉兴市轩禾园艺技术有限公司 | 多晶硅半导体薄膜衬底的制备方法 |
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US3903841A (en) | 1974-08-22 | 1975-09-09 | Gte Laboratories Inc | Vacuum holder in epitaxial growth apparatus |
US4777153A (en) * | 1986-05-06 | 1988-10-11 | Washington Research Foundation | Process for the production of porous ceramics using decomposable polymeric microspheres and the resultant product |
JPS63215506A (ja) * | 1987-02-27 | 1988-09-08 | Sankusu Kk | 多結晶シリコンの製造方法 |
WO1995015919A1 (en) * | 1993-12-08 | 1995-06-15 | Massachusetts Institute Of Technology | Casting tooling |
JP2003509846A (ja) * | 1999-09-09 | 2003-03-11 | アライドシグナル インコーポレイテッド | 集積回路平坦化のための改良された装置及び方法 |
JP2001121413A (ja) | 1999-10-21 | 2001-05-08 | Toshiba Mach Co Ltd | 平板状の被加工材の保持方法 |
FR2807338B1 (fr) | 2000-04-11 | 2002-11-29 | Commissariat Energie Atomique | Paroi poreuse pour former une couche gazeuse de sustentation |
JP2003054932A (ja) | 2001-08-23 | 2003-02-26 | Sharp Corp | 半導体基板の製造装置、半導体基板およびその製造方法ならびに太陽電池 |
AU2003256825A1 (en) * | 2002-07-31 | 2004-02-16 | Astropower, Inc. | Method and apparatus for manufacturing net shape semiconductor wafers |
US7407550B2 (en) * | 2002-10-18 | 2008-08-05 | Evergreen Solar, Inc. | Method and apparatus for crystal growth |
NO326797B1 (no) * | 2005-06-10 | 2009-02-16 | Elkem As | Fremgangsmate og apparat for raffinering av smeltet materiale |
US20070295385A1 (en) * | 2006-05-05 | 2007-12-27 | Nanosolar, Inc. | Individually encapsulated solar cells and solar cell strings having a substantially inorganic protective layer |
WO2009002550A1 (en) * | 2007-06-26 | 2008-12-31 | Massachusetts Institute Of Technology | Recrystallization of semiconductor wafers in a thin film capsule and related processes |
US7720321B2 (en) * | 2007-07-20 | 2010-05-18 | General Electric Company | Fiber optic sensor and method for making |
US8062704B2 (en) * | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
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CN103380481A (zh) | 2013-10-30 |
CN103380481B (zh) | 2018-04-06 |
US20140113156A1 (en) | 2014-04-24 |
CA2819144C (en) | 2019-06-04 |
EP2647032A4 (en) | 2014-07-09 |
MY180243A (en) | 2020-11-25 |
WO2012075306A2 (en) | 2012-06-07 |
CA2819144A1 (en) | 2012-06-07 |
EP2647032A2 (en) | 2013-10-09 |
TWI667700B (zh) | 2019-08-01 |
TW201232642A (en) | 2012-08-01 |
US9419167B2 (en) | 2016-08-16 |
KR101889858B1 (ko) | 2018-08-20 |
EP2647032B1 (en) | 2016-03-09 |
SG190288A1 (en) | 2013-06-28 |
KR20130132514A (ko) | 2013-12-04 |
WO2012075306A3 (en) | 2013-07-25 |
JP2014507360A (ja) | 2014-03-27 |
ES2575382T3 (es) | 2016-06-28 |
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