JP2012519650A5 - - Google Patents
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- Publication number
- JP2012519650A5 JP2012519650A5 JP2011554116A JP2011554116A JP2012519650A5 JP 2012519650 A5 JP2012519650 A5 JP 2012519650A5 JP 2011554116 A JP2011554116 A JP 2011554116A JP 2011554116 A JP2011554116 A JP 2011554116A JP 2012519650 A5 JP2012519650 A5 JP 2012519650A5
- Authority
- JP
- Japan
- Prior art keywords
- forming surface
- semiconductor material
- molten
- providing
- differential pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
Claims (1)
- 半導体本体を製造する方法であって、
ａ．表面を有する、溶融半導体物質を提供するステップと、
ｂ．形成面を備える多孔性モールドを提供するステップと、
ｃ．少なくとも前記形成面の一部での圧力が前記溶融物質の表面での圧力よりも低いように、差圧状態を提供するステップと、
ｄ．接触時間の間、前記形成面を前記溶融物質に接触させるステップであって、
少なくとも前記接触時間の一部の間、
ｉ．前記差圧状態が提供され、
ｉｉ．前記形成面の少なくとも一部が前記半導体物質の融点よりも低い温度であり、
半導体物質本体が前記形成面上で凝固する、ステップと、
ｅ．前記形成面上の凝固体とともに、前記溶融半導体物質に対して前記形成面を相対運動させるステップと、
ｆ．前記差圧状態の程度を軽減することによって、前記形成面から前記凝固体が外れることを助けるステップと、を含む方法。
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20958209P | 2009-03-09 | 2009-03-09 | |
| US61/209,582 | 2009-03-09 | ||
| US22473009P | 2009-07-10 | 2009-07-10 | |
| US61/224,730 | 2009-07-10 | ||
| US23796509P | 2009-08-28 | 2009-08-28 | |
| US61/237,965 | 2009-08-28 | ||
| PCT/US2010/026639 WO2010104838A1 (en) | 2009-03-09 | 2010-03-09 | Methods and apparati for making thin semiconductor bodies from molten material |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015002173A Division JP6030672B2 (ja) | 2009-03-09 | 2015-01-08 | 薄い半導体本体を溶融物質から作成するための方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012519650A JP2012519650A (ja) | 2012-08-30 |
| JP2012519650A5 true JP2012519650A5 (ja) | 2014-02-27 |
| JP5715579B2 JP5715579B2 (ja) | 2015-05-07 |
Family
ID=42728704
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011554116A Active JP5715579B2 (ja) | 2009-03-09 | 2010-03-09 | 薄い半導体本体を溶融物質から作成するための方法及び装置 |
| JP2015002173A Active JP6030672B2 (ja) | 2009-03-09 | 2015-01-08 | 薄い半導体本体を溶融物質から作成するための方法及び装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015002173A Active JP6030672B2 (ja) | 2009-03-09 | 2015-01-08 | 薄い半導体本体を溶融物質から作成するための方法及び装置 |
Country Status (12)
| Country | Link |
|---|---|
| US (4) | US20110247549A1 (ja) |
| EP (1) | EP2406413B1 (ja) |
| JP (2) | JP5715579B2 (ja) |
| KR (1) | KR101805096B1 (ja) |
| CN (1) | CN102421947B (ja) |
| CA (3) | CA2754880C (ja) |
| ES (1) | ES2680648T3 (ja) |
| MX (1) | MX336781B (ja) |
| MY (1) | MY160016A (ja) |
| SG (1) | SG173739A1 (ja) |
| TW (1) | TWI531691B (ja) |
| WO (1) | WO2010104838A1 (ja) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9050652B2 (en) | 2008-11-14 | 2015-06-09 | Carnegie Mellon University | Methods for casting by a float process and associated apparatuses |
| JP5715579B2 (ja) * | 2009-03-09 | 2015-05-07 | １３６６ テクノロジーズ インク． | 薄い半導体本体を溶融物質から作成するための方法及び装置 |
| US8685162B2 (en) * | 2010-05-06 | 2014-04-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using gas jets |
| US9267219B2 (en) | 2010-05-06 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Gas-lift pumps for flowing and purifying molten silicon |
| US20120027996A1 (en) * | 2010-07-27 | 2012-02-02 | Glen Bennett Cook | Mold shape to optimize thickness uniformity of silicon film |
| US20120129293A1 (en) * | 2010-11-24 | 2012-05-24 | Sergey Potapenko | Methods of making an unsupported article of a semiconducting material using thermally active molds |
| US9419167B2 (en) | 2010-12-01 | 2016-08-16 | 1366 Technologies, Inc. | Making semiconductor bodies from molten material using a free-standing interposer sheet |
| ES2600652T3 (es) * | 2011-01-26 | 2017-02-10 | Yamaguchi University | Elemento de contacto de silicio fundido y proceso para producir el mismo, y proceso para producir silicio cristalino |
| FR2978600B1 (fr) * | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
| US9396932B2 (en) | 2014-06-04 | 2016-07-19 | Diftek Lasers, Inc. | Method of fabricating crystalline island on substrate |
| US9859348B2 (en) | 2011-10-14 | 2018-01-02 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
| WO2014001886A1 (en) | 2012-06-27 | 2014-01-03 | Rgs Development B.V. | Film of polycrystalline semiconductor material, method of making same and orienting/undercooling molds therefor, and electronic device |
| WO2014001888A1 (en) | 2012-06-27 | 2014-01-03 | Rgs Development B.V. | Film of polycrystalline semiconductor material, method of making same and undercooling molds therefor, and electronic device |
| US20140097432A1 (en) * | 2012-10-09 | 2014-04-10 | Corning Incorporated | Sheet of semiconducting material, laminate, and system and methods for forming same |
| WO2015017098A1 (en) * | 2013-07-31 | 2015-02-05 | Christoph Sachs | Use of silicon nitride as a substrate and a coating material for the rapid solidification of silicon |
| CN103924291A (zh) * | 2014-04-25 | 2014-07-16 | 南昌欧菲光学技术有限公司 | 一种平板型蓝宝石长晶装置及方法 |
| KR20160148004A (ko) * | 2014-04-30 | 2016-12-23 | 1366 테크놀로지 인코포레이티드 | 다른 영역보다 상대적으로 더 두꺼운 국부적으로 제어된 영역을 갖는 얇은 반도체 웨이퍼를 제조하는 방법, 장치, 및 그 웨이퍼 |
| MY184998A (en) * | 2015-04-29 | 2021-04-30 | 1366 Tech Inc | Method for maintaining contained volume of molten material from which material is depleted and replenished |
| US10312310B2 (en) | 2016-01-19 | 2019-06-04 | Diftek Lasers, Inc. | OLED display and method of fabrication thereof |
| JP6857517B2 (ja) | 2016-06-16 | 2021-04-14 | ディフテック レーザーズ インコーポレイテッド | 基板上に結晶アイランドを製造する方法 |
| JP6915526B2 (ja) * | 2017-12-27 | 2021-08-04 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
| AR115182A3 (es) * | 2018-10-30 | 2020-12-09 | R Neto S A | Intercambiador aéreo geotérmico vertical |
| US11121125B2 (en) * | 2018-12-12 | 2021-09-14 | Micron Technology, Inc. | Thermal chamber for a thermal control component |
| CN117987932B (zh) * | 2024-04-03 | 2024-06-11 | 常州臻晶半导体有限公司 | 一种籽晶粘接烧结的冲压装置及其方法 |
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| GB801444A (en) | 1956-09-05 | 1958-09-17 | Standard Telephones Cables Ltd | Semi-conductor devices and methods of manufacturing such devices |
| US3903841A (en) * | 1974-08-22 | 1975-09-09 | Gte Laboratories Inc | Vacuum holder in epitaxial growth apparatus |
| DE3419137A1 (de) * | 1984-05-23 | 1985-11-28 | Bayer Ag, 5090 Leverkusen | Verfahren und vorrichtung zur herstellung von halbleiterfolien |
| NL8600216A (nl) | 1986-01-30 | 1987-08-17 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| US5111871B1 (en) * | 1989-03-17 | 1993-12-28 | J. Cook Arnold | Method of vacuum casting |
| JP3656821B2 (ja) | 1999-09-14 | 2005-06-08 | シャープ株式会社 | 多結晶シリコンシートの製造装置及び製造方法 |
| JP4111669B2 (ja) | 1999-11-30 | 2008-07-02 | シャープ株式会社 | シート製造方法、シートおよび太陽電池 |
| JP4121697B2 (ja) * | 1999-12-27 | 2008-07-23 | シャープ株式会社 | 結晶シートの製造方法およびその製造装置 |
| JP2003146640A (ja) * | 2001-11-09 | 2003-05-21 | Sharp Corp | 半導体シートの製造方法、半導体シート製造装置および太陽電池 |
| EP1459366A2 (en) | 2001-11-30 | 2004-09-22 | Koninklijke Philips Electronics N.V. | Method of forming a doped region in a semiconductor body comprising a step of amorphization by irradiation |
| JP2003226598A (ja) * | 2002-02-01 | 2003-08-12 | Sharp Corp | 結晶シートの製造装置、製造方法、その方法により製造される結晶シートおよびその結晶シートを用いて得られる太陽電池 |
| DE10362171B4 (de) * | 2002-06-28 | 2010-04-15 | Sharp Kabushiki Kaisha | Verfahren und Vorrichtung zum Herstellen einer dünnen Lage |
| US7407550B2 (en) * | 2002-10-18 | 2008-08-05 | Evergreen Solar, Inc. | Method and apparatus for crystal growth |
| US6814802B2 (en) * | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
| JP2004149375A (ja) * | 2002-10-31 | 2004-05-27 | Sharp Corp | 薄板製造方法および薄板製造装置 |
| JP4467392B2 (ja) * | 2004-09-24 | 2010-05-26 | シャープ株式会社 | 結晶シートの製造方法 |
| JP4294576B2 (ja) * | 2004-11-17 | 2009-07-15 | シャープ株式会社 | 薄板生成装置および薄板生成方法 |
| EP2128088B1 (en) * | 2007-01-25 | 2013-05-29 | Gen Kojima | Apparatus and method for manufacturing silicon substrate |
| JP5591695B2 (ja) * | 2007-06-26 | 2014-09-17 | マサチューセッツ インスティテュート オブ テクノロジー | 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程 |
| FR2918080B1 (fr) * | 2007-06-29 | 2010-12-17 | Commissariat Energie Atomique | Dispositif et procede d'elaboration de plaquettes en materiau semi-conducteur par moulage et cristallisation dirigee |
| JP5715579B2 (ja) * | 2009-03-09 | 2015-05-07 | １３６６ テクノロジーズ インク． | 薄い半導体本体を溶融物質から作成するための方法及び装置 |
-
2010
- 2010-03-09 JP JP2011554116A patent/JP5715579B2/ja active Active
- 2010-03-09 CA CA2754880A patent/CA2754880C/en active Active
- 2010-03-09 SG SG2011059268A patent/SG173739A1/en unknown
- 2010-03-09 WO PCT/US2010/026639 patent/WO2010104838A1/en active Application Filing
- 2010-03-09 CN CN201080021254.1A patent/CN102421947B/zh active Active
- 2010-03-09 ES ES10751275.8T patent/ES2680648T3/es active Active
- 2010-03-09 US US12/999,206 patent/US20110247549A1/en not_active Abandoned
- 2010-03-09 MY MYPI2011003933A patent/MY160016A/en unknown
- 2010-03-09 CA CA2962682A patent/CA2962682C/en active Active
- 2010-03-09 MX MX2011009206A patent/MX336781B/es active IP Right Grant
- 2010-03-09 TW TW099106727A patent/TWI531691B/zh active
- 2010-03-09 EP EP10751275.8A patent/EP2406413B1/en active Active
- 2010-03-09 KR KR1020117021651A patent/KR101805096B1/ko active IP Right Grant
- 2010-03-09 CA CA3031880A patent/CA3031880C/en active Active
-
2011
- 2011-11-17 US US13/299,031 patent/US8293009B2/en active Active
-
2012
- 2012-10-18 US US13/654,638 patent/US8696810B2/en active Active
-
2014
- 2014-04-11 US US14/250,581 patent/US9643342B2/en active Active
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2015
- 2015-01-08 JP JP2015002173A patent/JP6030672B2/ja active Active
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