JP2012504843A5 - - Google Patents

Download PDF

Info

Publication number
JP2012504843A5
JP2012504843A5 JP2011529560A JP2011529560A JP2012504843A5 JP 2012504843 A5 JP2012504843 A5 JP 2012504843A5 JP 2011529560 A JP2011529560 A JP 2011529560A JP 2011529560 A JP2011529560 A JP 2011529560A JP 2012504843 A5 JP2012504843 A5 JP 2012504843A5
Authority
JP
Japan
Prior art keywords
electrostatic lens
insulating structure
insulating
conductive plate
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011529560A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012504843A (ja
JP5420670B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2009/062788 external-priority patent/WO2010037832A2/en
Publication of JP2012504843A publication Critical patent/JP2012504843A/ja
Publication of JP2012504843A5 publication Critical patent/JP2012504843A5/ja
Application granted granted Critical
Publication of JP5420670B2 publication Critical patent/JP5420670B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011529560A 2008-10-01 2009-10-01 静電レンズ構造体 Active JP5420670B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10168208P 2008-10-01 2008-10-01
US61/101,682 2008-10-01
PCT/EP2009/062788 WO2010037832A2 (en) 2008-10-01 2009-10-01 Electrostatic lens structure

Publications (3)

Publication Number Publication Date
JP2012504843A JP2012504843A (ja) 2012-02-23
JP2012504843A5 true JP2012504843A5 (enExample) 2012-11-22
JP5420670B2 JP5420670B2 (ja) 2014-02-19

Family

ID=41466906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011529560A Active JP5420670B2 (ja) 2008-10-01 2009-10-01 静電レンズ構造体

Country Status (7)

Country Link
US (3) US8198602B2 (enExample)
EP (1) EP2406810B1 (enExample)
JP (1) JP5420670B2 (enExample)
KR (1) KR101649106B1 (enExample)
CN (1) CN102232237B (enExample)
TW (1) TWI479530B (enExample)
WO (1) WO2010037832A2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2406810B1 (en) * 2008-10-01 2014-09-17 Mapper Lithography IP B.V. Electrostatic lens structure
EP3144955A1 (en) 2009-05-20 2017-03-22 Mapper Lithography IP B.V. Method for exposing a wafer
CN102460633B (zh) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
JP2012033297A (ja) * 2010-07-29 2012-02-16 Hitachi High-Technologies Corp 電子銃
WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
KR102072200B1 (ko) 2011-04-22 2020-01-31 에이에스엠엘 네델란즈 비.브이. 리소그래피 머신들의 클러스터를 위한 네트워크 아키텍처 및 프로토콜
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
CN103959919A (zh) 2011-09-28 2014-07-30 迈普尔平版印刷Ip有限公司 等离子产生器
JP2013168396A (ja) * 2012-02-14 2013-08-29 Canon Inc 静電型の荷電粒子線レンズ及び荷電粒子線装置
JP2015511069A (ja) * 2012-03-19 2015-04-13 ケーエルエー−テンカー コーポレイション 柱で支持されたマイクロ電子レンズアレイ
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
WO2013171229A1 (en) 2012-05-14 2013-11-21 Mapper Lithography Ip B.V. Charged particle lithography system and beam generator
JP2014063866A (ja) * 2012-09-21 2014-04-10 Canon Inc シリコン基板の加工方法及び荷電粒子線レンズの製造方法
US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
WO2015024956A1 (en) 2013-08-23 2015-02-26 Mapper Lithography Ip B.V. Drying device for use in a lithography system
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
JP6550478B2 (ja) * 2016-04-13 2019-07-24 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム装置、荷電粒子ビーム装置、ソース変換ユニット、ソース変換ユニットを構成する方法、仮想的マルチソースアレイを形成するための方法
IL286590B2 (en) 2019-04-10 2025-09-01 Asml Netherlands Bv A stage fixture suitable for a partial beam fixture
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
IL300807A (en) * 2020-09-17 2023-04-01 Asml Netherlands Bv Charged particle evaluation tool test method
IL303983A (en) * 2020-12-23 2023-08-01 Asml Netherlands Bv Charged particle optical device
EP4020516A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
EP4020517A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
WO2022135926A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Electron lens
EP4092712A1 (en) 2021-05-18 2022-11-23 ASML Netherlands B.V. Charged particle optical device and method using it
US20230041174A1 (en) * 2021-08-08 2023-02-09 ViaMEMS Technologies, Inc. Electrostatic devices to influence beams of charged particles
CN115304022B (zh) * 2022-07-07 2024-05-24 武汉大学 基于超低能团簇离子束自组装制备功能纳米结构的方法
CN116230483A (zh) * 2022-12-21 2023-06-06 上海精测半导体技术有限公司 用于真空环境中隔离高压电极的绝缘装置
WO2024133468A1 (en) * 2022-12-22 2024-06-27 Asml Netherlands B.V. Charged particle apparatus, method of projecting charged particles, method of assessing a sample
EP4391006A1 (en) * 2022-12-22 2024-06-26 ASML Netherlands B.V. Charged particle apparatus, method of projecting charged particles, method of assessing a sample
JP2024114189A (ja) * 2023-02-13 2024-08-23 株式会社荏原製作所 絶縁構造体、静電レンズおよび荷電粒子線装置
US20250112017A1 (en) * 2023-09-30 2025-04-03 Kla Corporation Imaging thousands of electron beams during workpiece inspection

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207656A (en) * 1976-01-16 1980-06-17 U.S. Philips Corporation Color television display tube and method of manufacturing same
US4196373A (en) 1978-04-10 1980-04-01 General Electric Company Electron optics apparatus
US4200794A (en) 1978-11-08 1980-04-29 Control Data Corporation Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
JPS59211945A (ja) * 1983-05-18 1984-11-30 Hitachi Ltd カラ−受像管用電子銃
JPS63170818A (ja) * 1987-01-09 1988-07-14 富士電機株式会社 直流高電圧用樹脂モ−ルド絶縁体
JPS63278318A (ja) * 1987-05-11 1988-11-16 Matsushita Electric Ind Co Ltd 電極支持体
TW253971B (en) 1994-02-21 1995-08-11 Futaba Denshi Kogyo Kk Method for driving electron gun and cathode ray tube
JPH1040844A (ja) * 1996-07-26 1998-02-13 Shinko Pantec Co Ltd 高耐圧無放電対電極
JP3103800B2 (ja) 1999-03-11 2000-10-30 科学技術振興事業団 高電圧絶縁部材
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP4036417B2 (ja) * 2000-02-03 2008-01-23 キヤノン株式会社 画像形成装置
JP2001283756A (ja) * 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP2002134051A (ja) * 2000-10-20 2002-05-10 Seiko Instruments Inc 電磁界重畳型レンズ及びこれを用いた電子線装置
EP2434522B8 (en) * 2002-07-16 2014-07-23 Canon Kabushiki Kaisha Multi-charged beam lens, charged-particle beam exposure apparatus using the same, and device manufacturing method
JP4459568B2 (ja) 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
EP2575144B1 (en) 2003-09-05 2017-07-12 Carl Zeiss Microscopy GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
KR100496643B1 (ko) 2003-10-25 2005-06-20 한국전자통신연구원 마이크로칼럼 전자빔 장치의 자체정렬 적층 금속 박막전자빔 렌즈 및 그 제작방법
JP4124131B2 (ja) * 2004-02-02 2008-07-23 株式会社Ｎｈｖコーポレーション 電子線加速器用加速管
US7045794B1 (en) * 2004-06-18 2006-05-16 Novelx, Inc. Stacked lens structure and method of use thereof for preventing electrical breakdown
TW200703409A (en) * 2005-03-03 2007-01-16 Ebara Corp Mapping projection type electron beam apparatus and defects inspection system using such apparatus
JP2007173069A (ja) * 2005-12-22 2007-07-05 Japan Atomic Energy Agency 超低エネルギーイオン源用電極
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
WO2008032971A1 (en) 2006-09-11 2008-03-20 Cebt Co. Ltd. Lens assembly for electron column
US7576337B2 (en) * 2007-01-05 2009-08-18 Varian Semiconductor Equipment Associates, Inc. Power supply for an ion implantation system
EP2406810B1 (en) * 2008-10-01 2014-09-17 Mapper Lithography IP B.V. Electrostatic lens structure

Similar Documents

Publication Publication Date Title
CN102232237B (zh) 静电透镜构件
JP2005328047A5 (enExample)
TWI691998B (zh) 靜電多極元件、靜電多極裝置及製造靜電多極元件的方法
JP5415720B2 (ja) マルチビーム源
JP2022501794A5 (enExample)
US7867409B2 (en) Control of ion angular distribution function at wafer surface
JP2013196951A5 (enExample)
KR102739334B1 (ko) 멀티빔 검사 시스템에 대한 상면 만곡 보정
JP2011514633A5 (enExample)
WO2012172913A1 (en) Charged particle beam lens
TW201007371A (en) Imaging system
JP2013544030A5 (enExample)
JP2017516270A (ja) 質量分析計
JP2014502053A5 (enExample)
TW201239943A (en) Drawing apparatus and method of manufacturing article
US20100270474A1 (en) Particle-Optical System
JP2016524318A5 (ja) 低放射率静電チャック、及び静電チャックを備えたイオン注入システム
WO2012176574A1 (en) Electrode for a charged particle beam lens
JP2020019991A5 (enExample)
KR102118604B1 (ko) 라인 형태의 이온빔 방출 장치
JP6445867B2 (ja) 小型高電圧電子銃
JP2006139958A (ja) 荷電ビーム装置
JPH10149794A (ja) 投影リソグラフィー装置
JP2006054240A (ja) マルチ電子ビーム描画装置用デバイスの製造方法
JP4093955B2 (ja) イオンビーム発生装置及び蒸着方法