CN102232237B - 静电透镜构件 - Google Patents

静电透镜构件 Download PDF

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Publication number
CN102232237B
CN102232237B CN200980148233.3A CN200980148233A CN102232237B CN 102232237 B CN102232237 B CN 102232237B CN 200980148233 A CN200980148233 A CN 200980148233A CN 102232237 B CN102232237 B CN 102232237B
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CN
China
Prior art keywords
insulating member
conductive plate
electrostatic lens
insulating
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980148233.3A
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English (en)
Chinese (zh)
Other versions
CN102232237A (zh
Inventor
斯蒂金.W.H.K.斯廷布林克
约翰.J.康宁格
彼得.维尔特曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Mapper Lithopraphy IP BV
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Filing date
Publication date
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Publication of CN102232237A publication Critical patent/CN102232237A/zh
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Publication of CN102232237B publication Critical patent/CN102232237B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Shutters For Cameras (AREA)
CN200980148233.3A 2008-10-01 2009-10-01 静电透镜构件 Active CN102232237B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10168208P 2008-10-01 2008-10-01
US61/101,682 2008-10-01
PCT/EP2009/062788 WO2010037832A2 (en) 2008-10-01 2009-10-01 Electrostatic lens structure

Publications (2)

Publication Number Publication Date
CN102232237A CN102232237A (zh) 2011-11-02
CN102232237B true CN102232237B (zh) 2014-09-24

Family

ID=41466906

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980148233.3A Active CN102232237B (zh) 2008-10-01 2009-10-01 静电透镜构件

Country Status (7)

Country Link
US (3) US8198602B2 (enExample)
EP (1) EP2406810B1 (enExample)
JP (1) JP5420670B2 (enExample)
KR (1) KR101649106B1 (enExample)
CN (1) CN102232237B (enExample)
TW (1) TWI479530B (enExample)
WO (1) WO2010037832A2 (enExample)

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CN102460633B (zh) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
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WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
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WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
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US9224580B2 (en) 2011-09-28 2015-12-29 Mapper Litohgraphy Ip B.V. Plasma generator
JP2013168396A (ja) * 2012-02-14 2013-08-29 Canon Inc 静電型の荷電粒子線レンズ及び荷電粒子線装置
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US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
JP2014063866A (ja) * 2012-09-21 2014-04-10 Canon Inc シリコン基板の加工方法及び荷電粒子線レンズの製造方法
US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
CN107111251B (zh) 2014-11-14 2020-10-20 Asml荷兰有限公司 用于在光刻系统中转移基材的加载锁定系统和方法
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
CN108292583B (zh) * 2016-04-13 2020-03-20 Asml 荷兰有限公司 多个带电粒子束的装置
WO2020207805A1 (en) 2019-04-10 2020-10-15 Asml Netherlands B.V. Stage apparatus suitable for a particle beam apparatus
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
EP4214736A2 (en) * 2020-09-17 2023-07-26 ASML Netherlands B.V. Charged particle assessment tool, inspection method
JP2024501655A (ja) * 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電子レンズ
EP4020517A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
EP4020516A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
WO2022136064A1 (en) 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device
EP4092712A1 (en) 2021-05-18 2022-11-23 ASML Netherlands B.V. Charged particle optical device and method using it
US20230041174A1 (en) * 2021-08-08 2023-02-09 ViaMEMS Technologies, Inc. Electrostatic devices to influence beams of charged particles
CN115304022B (zh) * 2022-07-07 2024-05-24 武汉大学 基于超低能团簇离子束自组装制备功能纳米结构的方法
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JP2024114189A (ja) * 2023-02-13 2024-08-23 株式会社荏原製作所 絶縁構造体、静電レンズおよび荷電粒子線装置

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Also Published As

Publication number Publication date
TW201032258A (en) 2010-09-01
KR101649106B1 (ko) 2016-08-19
KR20110081253A (ko) 2011-07-13
TWI479530B (zh) 2015-04-01
US8198602B2 (en) 2012-06-12
CN102232237A (zh) 2011-11-02
USRE46452E1 (en) 2017-06-27
US20170309438A1 (en) 2017-10-26
US20110216299A1 (en) 2011-09-08
WO2010037832A3 (en) 2010-06-10
EP2406810A2 (en) 2012-01-18
WO2010037832A2 (en) 2010-04-08
JP2012504843A (ja) 2012-02-23
WO2010037832A4 (en) 2010-08-12
EP2406810B1 (en) 2014-09-17
JP5420670B2 (ja) 2014-02-19

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20190529

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: About Holland

Patentee before: Mapper Lithography IP B. V.

TR01 Transfer of patent right