JP5420670B2 - 静電レンズ構造体 - Google Patents

静電レンズ構造体 Download PDF

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Publication number
JP5420670B2
JP5420670B2 JP2011529560A JP2011529560A JP5420670B2 JP 5420670 B2 JP5420670 B2 JP 5420670B2 JP 2011529560 A JP2011529560 A JP 2011529560A JP 2011529560 A JP2011529560 A JP 2011529560A JP 5420670 B2 JP5420670 B2 JP 5420670B2
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JP
Japan
Prior art keywords
electrostatic lens
insulating structure
insulating
conductive plate
plate
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JP2011529560A
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English (en)
Japanese (ja)
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JP2012504843A (ja
JP2012504843A5 (enExample
Inventor
ステーンブリンク、スティーン・ウィレム・ヘルマン・カレル
コニング、ヨハン・ヨースト
フェルトマン、ペーテル
Original Assignee
マッパー・リソグラフィー・アイピー・ビー．ブイ．
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Publication of JP2012504843A publication Critical patent/JP2012504843A/ja
Publication of JP2012504843A5 publication Critical patent/JP2012504843A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Shutters For Cameras (AREA)
JP2011529560A 2008-10-01 2009-10-01 静電レンズ構造体 Active JP5420670B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10168208P 2008-10-01 2008-10-01
US61/101,682 2008-10-01
PCT/EP2009/062788 WO2010037832A2 (en) 2008-10-01 2009-10-01 Electrostatic lens structure

Publications (3)

Publication Number Publication Date
JP2012504843A JP2012504843A (ja) 2012-02-23
JP2012504843A5 JP2012504843A5 (enExample) 2012-11-22
JP5420670B2 true JP5420670B2 (ja) 2014-02-19

Family

ID=41466906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011529560A Active JP5420670B2 (ja) 2008-10-01 2009-10-01 静電レンズ構造体

Country Status (7)

Country Link
US (3) US8198602B2 (enExample)
EP (1) EP2406810B1 (enExample)
JP (1) JP5420670B2 (enExample)
KR (1) KR101649106B1 (enExample)
CN (1) CN102232237B (enExample)
TW (1) TWI479530B (enExample)
WO (1) WO2010037832A2 (enExample)

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CN104795303B (zh) 2009-05-20 2017-12-05 迈普尔平版印刷Ip有限公司 用于处理图案数据的方法
EP2443647B1 (en) 2009-05-20 2016-10-05 Mapper Lithography IP B.V. Pattern data conversion for lithography system
JP2012033297A (ja) * 2010-07-29 2012-02-16 Hitachi High-Technologies Corp 電子銃
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
EP2699966B1 (en) 2011-04-22 2021-04-07 ASML Netherlands B.V. Network architecture and protocol for cluster of lithography machines
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TWI514089B (zh) 2011-04-28 2015-12-21 Mapper Lithography Ip Bv 在微影系統中用於轉移基板的設備
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WO2013142068A1 (en) * 2012-03-19 2013-09-26 Kla-Tencor Corporation Pillar-supported array of micro electron lenses
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN104428866A (zh) 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
JP2014063866A (ja) * 2012-09-21 2014-04-10 Canon Inc シリコン基板の加工方法及び荷電粒子線レンズの製造方法
US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
CN107111251B (zh) 2014-11-14 2020-10-20 Asml荷兰有限公司 用于在光刻系统中转移基材的加载锁定系统和方法
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
WO2016145458A1 (en) * 2015-03-10 2016-09-15 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
JP7232935B2 (ja) * 2019-04-10 2023-03-03 エーエスエムエル ネザーランズ ビー．ブイ． 粒子ビーム装置に適したステージ装置
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
EP4214736A2 (en) * 2020-09-17 2023-07-26 ASML Netherlands B.V. Charged particle assessment tool, inspection method
WO2022135926A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Electron lens
EP4020517A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
EP4020516A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
IL303983A (en) 2020-12-23 2023-08-01 Asml Netherlands Bv Charged particle optical device
EP4092712A1 (en) 2021-05-18 2022-11-23 ASML Netherlands B.V. Charged particle optical device and method using it
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CN115304022B (zh) * 2022-07-07 2024-05-24 武汉大学 基于超低能团簇离子束自组装制备功能纳米结构的方法
CN120390972A (zh) * 2022-12-22 2025-07-29 Asml荷兰有限公司 带电粒子装置、带电粒子投射方法、样品评估方法
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JP2024114189A (ja) * 2023-02-13 2024-08-23 株式会社荏原製作所 絶縁構造体、静電レンズおよび荷電粒子線装置

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Also Published As

Publication number Publication date
WO2010037832A3 (en) 2010-06-10
US8198602B2 (en) 2012-06-12
EP2406810B1 (en) 2014-09-17
KR20110081253A (ko) 2011-07-13
CN102232237B (zh) 2014-09-24
KR101649106B1 (ko) 2016-08-19
US20110216299A1 (en) 2011-09-08
USRE46452E1 (en) 2017-06-27
EP2406810A2 (en) 2012-01-18
JP2012504843A (ja) 2012-02-23
WO2010037832A2 (en) 2010-04-08
CN102232237A (zh) 2011-11-02
TW201032258A (en) 2010-09-01
TWI479530B (zh) 2015-04-01
US20170309438A1 (en) 2017-10-26
WO2010037832A4 (en) 2010-08-12

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