EP3268979A4 - Apparatus of plural charged-particle beams - Google Patents

Apparatus of plural charged-particle beams Download PDF

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Publication number
EP3268979A4
EP3268979A4 EP16762718.1A EP16762718A EP3268979A4 EP 3268979 A4 EP3268979 A4 EP 3268979A4 EP 16762718 A EP16762718 A EP 16762718A EP 3268979 A4 EP3268979 A4 EP 3268979A4
Authority
EP
European Patent Office
Prior art keywords
particle beams
plural charged
plural
charged
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16762718.1A
Other languages
German (de)
French (fr)
Other versions
EP3268979A1 (en
Inventor
Weiming Ren
Shuai LI
Xuedong Liu
Zhongwei Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Hermes Microvision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hermes Microvision Inc filed Critical Hermes Microvision Inc
Publication of EP3268979A1 publication Critical patent/EP3268979A1/en
Publication of EP3268979A4 publication Critical patent/EP3268979A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
EP16762718.1A 2016-04-13 2016-04-13 Apparatus of plural charged-particle beams Pending EP3268979A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2016/027267 WO2016145458A1 (en) 2015-03-10 2016-04-13 Apparatus of plural charged-particle beams

Publications (2)

Publication Number Publication Date
EP3268979A1 EP3268979A1 (en) 2018-01-17
EP3268979A4 true EP3268979A4 (en) 2019-05-08

Family

ID=61141517

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16762718.1A Pending EP3268979A4 (en) 2016-04-13 2016-04-13 Apparatus of plural charged-particle beams

Country Status (4)

Country Link
EP (1) EP3268979A4 (en)
JP (1) JP6550478B2 (en)
CN (1) CN108292583B (en)
WO (1) WO2016145458A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240042242A (en) 2015-07-22 2024-04-01 에이에스엠엘 네델란즈 비.브이. Apparatus of plural charged-particle beams
KR102068206B1 (en) 2015-11-30 2020-01-20 에이에스엠엘 네델란즈 비.브이. Device of a plurality of charged particle beams
US10062541B2 (en) 2016-01-27 2018-08-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
WO2019068666A1 (en) * 2017-10-02 2019-04-11 Asml Netherlands B.V. An apparatus using charged particle beams
US10741354B1 (en) 2018-02-14 2020-08-11 Kla-Tencor Corporation Photocathode emitter system that generates multiple electron beams
EP3576128A1 (en) * 2018-05-28 2019-12-04 ASML Netherlands B.V. Electron beam apparatus, inspection tool and inspection method
WO2020030483A1 (en) * 2018-08-09 2020-02-13 Asml Netherlands B.V. An apparatus for multiple charged-particle beams
DE102018124219A1 (en) * 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Multi-beam particle beam system and method for operating such a system
US10748739B2 (en) * 2018-10-12 2020-08-18 Kla-Tencor Corporation Deflection array apparatus for multi-electron beam system
JP7068549B2 (en) * 2018-10-19 2022-05-16 エーエスエムエル ネザーランズ ビー．ブイ． Systems and methods for aligning electron beams in multi-beam inspection equipment
KR20210075184A (en) * 2018-11-16 2021-06-22 에이에스엠엘 네델란즈 비.브이. Electromagnetic composite lenses and charged particle optical systems having such lenses
EP3906578A1 (en) * 2018-12-31 2021-11-10 ASML Netherlands B.V. Multi-beam inspection apparatus
US10748743B1 (en) * 2019-02-12 2020-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for operating a charged particle device with multiple beamlets
JP7271704B2 (en) 2019-03-29 2023-05-11 エーエスエムエル ネザーランズ ビー．ブイ． Multi-beam inspection system with single-beam mode
DE102019004124B4 (en) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Particle beam system for the azimuthal deflection of individual particle beams and its use and method for azimuth correction in a particle beam system
JP7303052B2 (en) 2019-07-16 2023-07-04 株式会社ニューフレアテクノロジー Continuity inspection method for multipole aberration corrector and continuity inspection apparatus for multipole aberration corrector
US11056312B1 (en) * 2020-02-05 2021-07-06 Kla Corporation Micro stigmator array for multi electron beam system
JP7423804B2 (en) * 2020-03-05 2024-01-29 エーエスエムエル ネザーランズ ビー．ブイ． Beam array geometry optimization device for multibeam inspection systems
JP7442376B2 (en) * 2020-04-06 2024-03-04 株式会社ニューフレアテクノロジー Multi-electron beam inspection device and multi-electron beam inspection method
JP2022016779A (en) * 2020-07-13 2022-01-25 株式会社ニューフレアテクノロジー Pattern inspection device and method for obtaining contour position of pattern

Citations (3)

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Publication number Priority date Publication date Assignee Title
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
US20080054184A1 (en) * 2003-09-05 2008-03-06 Carl Zeiss Smt Ag Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
EP2879155A1 (en) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI

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US6630681B1 (en) * 1999-07-21 2003-10-07 Nikon Corporation Charged-particle-beam microlithography apparatus and methods including correction of aberrations caused by space-charge effects
WO2001039243A1 (en) * 1999-11-23 2001-05-31 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
WO2002091421A1 (en) * 2001-05-01 2002-11-14 Nikon Corporation Electron beam apparatus and device manufacturing method using the electron beam apparatus
JP2003331772A (en) * 2002-05-16 2003-11-21 Ebara Corp Electron beam equipment and device manufacturing method
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
CN101414124B (en) * 2002-10-30 2012-03-07 迈普尔平版印刷Ip有限公司 Electron beam exposure system
JP3728315B2 (en) * 2003-12-16 2005-12-21 キヤノン株式会社 Electron beam exposure apparatus, electron beam exposure method, and device manufacturing method
TW200700717A (en) * 2005-03-22 2007-01-01 Ebara Corp Electron beam device
TWI479530B (en) * 2008-10-01 2015-04-01 Mapper Lithography Ip Bv Electrostatic lens structure, electrostatic lens array, charged particle beamlet lithography system and method of manufacturing an insulating structure
JP5498488B2 (en) * 2009-05-27 2014-05-21 株式会社日立ハイテクノロジーズ Charged particle beam application apparatus and sample observation method
EP2722868B1 (en) * 2012-10-16 2018-02-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Octopole device and method for spot size improvement
JP2014082171A (en) * 2012-10-18 2014-05-08 Canon Inc Irradiation system, drawing device and method of manufacturing article
JP2014229481A (en) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ Charged particle ray application device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
US20080054184A1 (en) * 2003-09-05 2008-03-06 Carl Zeiss Smt Ag Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
EP2879155A1 (en) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016145458A1 *

Also Published As

Publication number Publication date
WO2016145458A1 (en) 2016-09-15
CN108292583B (en) 2020-03-20
JP6550478B2 (en) 2019-07-24
CN108292583A (en) 2018-07-17
JP2018513543A (en) 2018-05-24
EP3268979A1 (en) 2018-01-17

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Owner name: CHEN, ZHONGWEI

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