EP3268979A4 - Vorrichtung mit mehreren geladenen teilchenstrahlen - Google Patents

Vorrichtung mit mehreren geladenen teilchenstrahlen Download PDF

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Publication number
EP3268979A4
EP3268979A4 EP16762718.1A EP16762718A EP3268979A4 EP 3268979 A4 EP3268979 A4 EP 3268979A4 EP 16762718 A EP16762718 A EP 16762718A EP 3268979 A4 EP3268979 A4 EP 3268979A4
Authority
EP
European Patent Office
Prior art keywords
particle beams
plural charged
plural
charged
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16762718.1A
Other languages
English (en)
French (fr)
Other versions
EP3268979A1 (de
Inventor
Weiming Ren
Shuai LI
Xuedong Liu
Zhongwei Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Hermes Microvision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hermes Microvision Inc filed Critical Hermes Microvision Inc
Publication of EP3268979A1 publication Critical patent/EP3268979A1/de
Publication of EP3268979A4 publication Critical patent/EP3268979A4/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)
EP16762718.1A 2016-04-13 2016-04-13 Vorrichtung mit mehreren geladenen teilchenstrahlen Pending EP3268979A4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2016/027267 WO2016145458A1 (en) 2015-03-10 2016-04-13 Apparatus of plural charged-particle beams

Publications (2)

Publication Number Publication Date
EP3268979A1 EP3268979A1 (de) 2018-01-17
EP3268979A4 true EP3268979A4 (de) 2019-05-08

Family

ID=61141517

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16762718.1A Pending EP3268979A4 (de) 2016-04-13 2016-04-13 Vorrichtung mit mehreren geladenen teilchenstrahlen

Country Status (4)

Country Link
EP (1) EP3268979A4 (de)
JP (1) JP6550478B2 (de)
CN (1) CN108292583B (de)
WO (1) WO2016145458A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102651558B1 (ko) 2015-07-22 2024-03-26 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔을 이용하는 장치
EP3384279A4 (de) 2015-11-30 2019-10-09 Hermes Microvision Inc. Vorrichtung mit mehreren geladenen teilchenstrahlen
US10062541B2 (en) 2016-01-27 2018-08-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
JP7286630B2 (ja) * 2017-10-02 2023-06-05 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子ビームを用いた装置
US10741354B1 (en) 2018-02-14 2020-08-11 Kla-Tencor Corporation Photocathode emitter system that generates multiple electron beams
EP3576128A1 (de) * 2018-05-28 2019-12-04 ASML Netherlands B.V. Elektronenstrahlvorrichtung, prüfwerkzeug und prüfverfahren
JP2021532545A (ja) * 2018-08-09 2021-11-25 エーエスエムエル ネザーランズ ビー．ブイ． 複数の荷電粒子ビームのための装置
DE102018124219A1 (de) * 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
US10748739B2 (en) * 2018-10-12 2020-08-18 Kla-Tencor Corporation Deflection array apparatus for multi-electron beam system
KR102660825B1 (ko) * 2018-10-19 2024-04-26 에이에스엠엘 네델란즈 비.브이. 멀티 빔 검사 장치에서 전자 빔들을 정렬하기 위한 시스템 및 방법
EP3881347A1 (de) * 2018-11-16 2021-09-22 ASML Netherlands B.V. Elektromagnetische zusammengesetzte linse und optisches system mit geladenen teilchen mit einer solchen linse
CN113614873A (zh) 2018-12-31 2021-11-05 Asml荷兰有限公司 多束检查装置
US10748743B1 (en) * 2019-02-12 2020-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for operating a charged particle device with multiple beamlets
KR102655288B1 (ko) 2019-03-29 2024-04-08 에이에스엠엘 네델란즈 비.브이. 단일-빔 모드를 갖는 멀티-빔 검사 장치
DE102019004124B4 (de) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
JP7303052B2 (ja) * 2019-07-16 2023-07-04 株式会社ニューフレアテクノロジー 多極子収差補正器の導通検査方法及び多極子収差補正器の導通検査装置
US11056312B1 (en) * 2020-02-05 2021-07-06 Kla Corporation Micro stigmator array for multi electron beam system
KR20220134689A (ko) * 2020-03-05 2022-10-05 에이에스엠엘 네델란즈 비.브이. 멀티-빔 검사 시스템을 위한 빔 어레이 지오메트리 옵티마이저
JP7442376B2 (ja) 2020-04-06 2024-03-04 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法
JP7514677B2 (ja) * 2020-07-13 2024-07-11 株式会社ニューフレアテクノロジー パターン検査装置及びパターンの輪郭位置取得方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
US20080054184A1 (en) * 2003-09-05 2008-03-06 Carl Zeiss Smt Ag Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
EP2879155A1 (de) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Mehrstrahlsystem mit Hochdurchsatz-EBI

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US6630681B1 (en) * 1999-07-21 2003-10-07 Nikon Corporation Charged-particle-beam microlithography apparatus and methods including correction of aberrations caused by space-charge effects
WO2001039243A1 (en) * 1999-11-23 2001-05-31 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
WO2002091421A1 (fr) * 2001-05-01 2002-11-14 Nikon Corporation Appareil a faisceau d'electrons et son utilisation pour la fabrication
JP2003331772A (ja) * 2002-05-16 2003-11-21 Ebara Corp 電子線装置及びデバイス製造方法
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
KR101119890B1 (ko) * 2002-10-30 2012-03-13 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
JP3728315B2 (ja) * 2003-12-16 2005-12-21 キヤノン株式会社 電子ビーム露光装置、電子ビーム露光方法、および、デバイス製造方法
TW200700717A (en) * 2005-03-22 2007-01-01 Ebara Corp Electron beam device
EP2406810B1 (de) * 2008-10-01 2014-09-17 Mapper Lithography IP B.V. Elektrostatische linsenstruktur
US8552373B2 (en) * 2009-05-27 2013-10-08 Hitachi High-Technologies Corporation Charged particle beam device and sample observation method
EP2722868B1 (de) * 2012-10-16 2018-02-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Oktopolvorrichtung und -verfahren zur spotgrössenverbesserung
JP2014082171A (ja) * 2012-10-18 2014-05-08 Canon Inc 照射系、描画装置および物品の製造方法
JP2014229481A (ja) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
US20080054184A1 (en) * 2003-09-05 2008-03-06 Carl Zeiss Smt Ag Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
EP2879155A1 (de) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Mehrstrahlsystem mit Hochdurchsatz-EBI

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016145458A1 *

Also Published As

Publication number Publication date
JP6550478B2 (ja) 2019-07-24
JP2018513543A (ja) 2018-05-24
WO2016145458A1 (en) 2016-09-15
CN108292583B (zh) 2020-03-20
CN108292583A (zh) 2018-07-17
EP3268979A1 (de) 2018-01-17

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Owner name: CHEN, ZHONGWEI

Owner name: LI, SHUAI

Owner name: LIU, XUEDONG

Owner name: REN, WEIMING

Owner name: ASML NETHERLANDS B.V.

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