EP3268979A4 - Appareil ayant plusieurs faisceaux de particules chargées - Google Patents

Appareil ayant plusieurs faisceaux de particules chargées Download PDF

Info

Publication number
EP3268979A4
EP3268979A4 EP16762718.1A EP16762718A EP3268979A4 EP 3268979 A4 EP3268979 A4 EP 3268979A4 EP 16762718 A EP16762718 A EP 16762718A EP 3268979 A4 EP3268979 A4 EP 3268979A4
Authority
EP
European Patent Office
Prior art keywords
particle beams
plural charged
plural
charged
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16762718.1A
Other languages
German (de)
English (en)
Other versions
EP3268979A1 (fr
Inventor
Weiming Ren
Shuai LI
Xuedong Liu
Zhongwei Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Hermes Microvision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hermes Microvision Inc filed Critical Hermes Microvision Inc
Publication of EP3268979A1 publication Critical patent/EP3268979A1/fr
Publication of EP3268979A4 publication Critical patent/EP3268979A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)
EP16762718.1A 2016-04-13 2016-04-13 Appareil ayant plusieurs faisceaux de particules chargées Pending EP3268979A4 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2016/027267 WO2016145458A1 (fr) 2015-03-10 2016-04-13 Appareil ayant plusieurs faisceaux de particules chargées

Publications (2)

Publication Number Publication Date
EP3268979A1 EP3268979A1 (fr) 2018-01-17
EP3268979A4 true EP3268979A4 (fr) 2019-05-08

Family

ID=61141517

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16762718.1A Pending EP3268979A4 (fr) 2016-04-13 2016-04-13 Appareil ayant plusieurs faisceaux de particules chargées

Country Status (4)

Country Link
EP (1) EP3268979A4 (fr)
JP (1) JP6550478B2 (fr)
CN (1) CN108292583B (fr)
WO (1) WO2016145458A1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6703092B2 (ja) 2015-07-22 2020-06-03 エーエスエムエル ネザーランズ ビー．ブイ． 複数荷電粒子ビームの装置
KR20230010272A (ko) 2015-11-30 2023-01-18 에이에스엠엘 네델란즈 비.브이. 복수의 하전된 입자 빔의 장치
SG11201806100PA (en) 2016-01-27 2018-08-30 Hermes Microvision Inc Apparatus of plural charged-particle beams
JP7286630B2 (ja) * 2017-10-02 2023-06-05 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子ビームを用いた装置
US10741354B1 (en) 2018-02-14 2020-08-11 Kla-Tencor Corporation Photocathode emitter system that generates multiple electron beams
EP3576128A1 (fr) * 2018-05-28 2019-12-04 ASML Netherlands B.V. Appareil à faisceau d'électrons, outil d'inspection et procédé d'inspection
EP3834222A1 (fr) * 2018-08-09 2021-06-16 ASML Netherlands B.V. Appareil destiné à de multiples faisceaux de particules chargées
DE102018124219A1 (de) * 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
US10748739B2 (en) * 2018-10-12 2020-08-18 Kla-Tencor Corporation Deflection array apparatus for multi-electron beam system
IL282274B2 (en) * 2018-10-19 2024-01-01 Asml Netherlands Bv Method and system for aligning electron beams in a multi-beam test device
KR20240055162A (ko) * 2018-11-16 2024-04-26 에이에스엠엘 네델란즈 비.브이. 전자기 복합 렌즈 및 이러한 렌즈를 갖는 하전 입자 광학 시스템
KR102596926B1 (ko) * 2018-12-31 2023-11-01 에이에스엠엘 네델란즈 비.브이. 다중 빔 검사 장치
US10748743B1 (en) * 2019-02-12 2020-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for operating a charged particle device with multiple beamlets
WO2020200745A1 (fr) 2019-03-29 2020-10-08 Asml Netherlands B.V. Appareil d'inspection à faisceaux multiples comportant un mode à faisceau unique
DE102019004124B4 (de) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
JP7303052B2 (ja) * 2019-07-16 2023-07-04 株式会社ニューフレアテクノロジー 多極子収差補正器の導通検査方法及び多極子収差補正器の導通検査装置
US11056312B1 (en) * 2020-02-05 2021-07-06 Kla Corporation Micro stigmator array for multi electron beam system
JP7423804B2 (ja) * 2020-03-05 2024-01-29 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム検査システム用のビーム・アレイ・ジオメトリ最適化装置
DE102020107738B3 (de) * 2020-03-20 2021-01-14 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multipol-Linsen-Sequenz zur unabhängigen Fokussierung einer Vielzahl von Einzel-Teilchenstrahlen, seine Verwendung und zugehöriges Verfahren
JP7442376B2 (ja) * 2020-04-06 2024-03-04 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法
JP7514677B2 (ja) * 2020-07-13 2024-07-11 株式会社ニューフレアテクノロジー パターン検査装置及びパターンの輪郭位置取得方法
CN111883408A (zh) * 2020-08-13 2020-11-03 深圳市奥谱太赫兹技术研究院 多电子束聚焦装置和控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
US20080054184A1 (en) * 2003-09-05 2008-03-06 Carl Zeiss Smt Ag Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
EP2879155A1 (fr) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Système multifaisceau EBI à haut rendement

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630681B1 (en) * 1999-07-21 2003-10-07 Nikon Corporation Charged-particle-beam microlithography apparatus and methods including correction of aberrations caused by space-charge effects
WO2001039243A1 (fr) * 1999-11-23 2001-05-31 Ion Diagnostics, Inc. Optique electronique destinee a un outil lithographique faisceau electronique multi-faisceaux
JP4041742B2 (ja) * 2001-05-01 2008-01-30 株式会社荏原製作所 電子線装置及び該電子線装置を用いたデバイス製造方法
JP2003331772A (ja) * 2002-05-16 2003-11-21 Ebara Corp 電子線装置及びデバイス製造方法
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
JP5053514B2 (ja) * 2002-10-30 2012-10-17 マッパー・リソグラフィー・アイピー・ビー．ブイ． 電子ビーム露光システム
JP3728315B2 (ja) * 2003-12-16 2005-12-21 キヤノン株式会社 電子ビーム露光装置、電子ビーム露光方法、および、デバイス製造方法
KR20070116260A (ko) * 2005-03-22 2007-12-07 가부시키가이샤 에바라 세이사꾸쇼 전자선장치
JP5420670B2 (ja) * 2008-10-01 2014-02-19 マッパー・リソグラフィー・アイピー・ビー．ブイ． 静電レンズ構造体
JP5498488B2 (ja) * 2009-05-27 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置及び試料観察方法
EP2722868B1 (fr) * 2012-10-16 2018-02-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif octopolaire et procédé d'amélioration de la taille du point
JP2014082171A (ja) * 2012-10-18 2014-05-08 Canon Inc 照射系、描画装置および物品の製造方法
JP2014229481A (ja) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
US20080054184A1 (en) * 2003-09-05 2008-03-06 Carl Zeiss Smt Ag Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
EP2879155A1 (fr) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Système multifaisceau EBI à haut rendement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016145458A1 *

Also Published As

Publication number Publication date
JP2018513543A (ja) 2018-05-24
EP3268979A1 (fr) 2018-01-17
WO2016145458A1 (fr) 2016-09-15
CN108292583A (zh) 2018-07-17
CN108292583B (zh) 2020-03-20
JP6550478B2 (ja) 2019-07-24

Similar Documents

Publication Publication Date Title
IL289373A (en) The device of multiple charged-particle beams
EP3384279A4 (fr) Appareil ayant de multiples faisceaux de particules chargées
EP3325950A4 (fr) Appareil ayant de multiples faisceaux de particules chargées
EP3268979A4 (fr) Appareil ayant plusieurs faisceaux de particules chargées
SG11201707178RA (en) Apparatus of plural charged-particle beams
IL267670A (en) A device that uses multiple beams of charged particles
AU2017301985B2 (en) Method of generating aerosol
EP3320692A4 (fr) Appareil de traitement spatial de signaux audio
EP3289697A4 (fr) Appareil, système et procédé de formation de faisceau
EP3295737A4 (fr) Procédés et dispositifs de sélection de faisceau
EP3369458A4 (fr) Procédé d'évaluation de l'angle d'irradiation d'un faisceau
EP3439793A4 (fr) Appareil de production d'aérosol
EP3431402A4 (fr) Appareil de stérilisation par faisceau d'électrons
EP3409354A4 (fr) Appareil de réaction
EP3280408A4 (fr) Procédé de préparation de dicycloplatine
EP3357535A4 (fr) Dispositif de thérapie à faisceau de particules
EP3388390A4 (fr) Procédé de production d'ozone
EP3354034B8 (fr) Distribution sécurisée d'une image
EP3312141A4 (fr) Appareil d'exfoliation de matériau en plaque comprenant un microcanal
IL270102B2 (en) A device that uses multiple balls of charged particles
EP3130374A4 (fr) Appareil de rayonnement de faisceau de particules
EP3314499A4 (fr) Suppression temporaire de privilège d'un processus
EP3208203A4 (fr) Équipement de stérilisation sous faisceau d'électrons
EP3093045A4 (fr) Appareil d'irradiation par faisceau de particules
EP3376235A4 (fr) Procédé de réaction

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20170901

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIC1 Information provided on ipc code assigned before grant

Ipc: H01J 37/147 20060101ALI20181212BHEP

Ipc: H01J 49/00 20060101AFI20181212BHEP

Ipc: G21K 5/10 20060101ALI20181212BHEP

Ipc: G21K 7/00 20060101ALI20181212BHEP

Ipc: H01J 37/28 20060101ALI20181212BHEP

Ipc: G01N 23/00 20060101ALI20181212BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20190404

RIC1 Information provided on ipc code assigned before grant

Ipc: G21K 7/00 20060101ALI20190329BHEP

Ipc: H01J 37/147 20060101ALI20190329BHEP

Ipc: H01J 37/28 20060101ALI20190329BHEP

Ipc: H01J 49/00 20060101AFI20190329BHEP

Ipc: G21K 5/10 20060101ALI20190329BHEP

Ipc: G01N 23/00 20060101ALI20190329BHEP

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: CHEN, ZHONGWEI

Owner name: LI, SHUAI

Owner name: LIU, XUEDONG

Owner name: REN, WEIMING

Owner name: ASML NETHERLANDS B.V.

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20230316

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230414