TWI479530B - 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 - Google Patents

靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 Download PDF

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Publication number
TWI479530B
TWI479530B TW098133357A TW98133357A TWI479530B TW I479530 B TWI479530 B TW I479530B TW 098133357 A TW098133357 A TW 098133357A TW 98133357 A TW98133357 A TW 98133357A TW I479530 B TWI479530 B TW I479530B
Authority
TW
Taiwan
Prior art keywords
electrostatic lens
hole
insulating structure
insulating
sheet
Prior art date
Application number
TW098133357A
Other languages
English (en)
Chinese (zh)
Other versions
TW201032258A (en
Inventor
Stijn Willem Herman Karel Steenbrink
Johan Joost Koning
Peter Veltman
Original Assignee
Mapper Lithography Ip Bv
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Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW201032258A publication Critical patent/TW201032258A/zh
Application granted granted Critical
Publication of TWI479530B publication Critical patent/TWI479530B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Shutters For Cameras (AREA)
TW098133357A 2008-10-01 2009-10-01 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 TWI479530B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10168208P 2008-10-01 2008-10-01

Publications (2)

Publication Number Publication Date
TW201032258A TW201032258A (en) 2010-09-01
TWI479530B true TWI479530B (zh) 2015-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098133357A TWI479530B (zh) 2008-10-01 2009-10-01 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法

Country Status (7)

Country Link
US (3) US8198602B2 (enExample)
EP (1) EP2406810B1 (enExample)
JP (1) JP5420670B2 (enExample)
KR (1) KR101649106B1 (enExample)
CN (1) CN102232237B (enExample)
TW (1) TWI479530B (enExample)
WO (1) WO2010037832A2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101649106B1 (ko) * 2008-10-01 2016-08-19 마퍼 리쏘그라피 아이피 비.브이. 정전기 렌즈 구조
JP5801289B2 (ja) 2009-05-20 2015-10-28 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフシステムのためのパターンデータ変換
KR101636523B1 (ko) 2009-05-20 2016-07-06 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
JP2012033297A (ja) * 2010-07-29 2012-02-16 Hitachi High-Technologies Corp 電子銃
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
WO2013045636A2 (en) 2011-09-28 2013-04-04 Mapper Lithography Ip B.V. Plasma generator
JP2013168396A (ja) * 2012-02-14 2013-08-29 Canon Inc 静電型の荷電粒子線レンズ及び荷電粒子線装置
JP2015511069A (ja) * 2012-03-19 2015-04-13 ケーエルエー−テンカー コーポレイション 柱で支持されたマイクロ電子レンズアレイ
NL2010797C2 (en) 2012-05-14 2014-08-21 Mapper Lithography Ip Bv Charged particle lithography system and beam generator.
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
JP2014063866A (ja) * 2012-09-21 2014-04-10 Canon Inc シリコン基板の加工方法及び荷電粒子線レンズの製造方法
US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
JP2017513036A (ja) 2014-11-14 2017-05-25 マッパー・リソグラフィー・アイピー・ビー．ブイ． 貨物固定システムおよびリソグラフィシステム内で基板を移送するための方法
WO2016145458A1 (en) * 2015-03-10 2016-09-15 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
EP3953960A1 (en) 2019-04-10 2022-02-16 ASML Netherlands B.V. Stage apparatus suitable for a particle beam apparatus
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
KR20230067620A (ko) 2020-09-17 2023-05-16 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 툴, 검사 방법
EP4020516A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
EP4020517A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
EP4268256A1 (en) * 2020-12-23 2023-11-01 ASML Netherlands B.V. Electron lens
WO2022136064A1 (en) 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device
EP4092712A1 (en) 2021-05-18 2022-11-23 ASML Netherlands B.V. Charged particle optical device and method using it
EP4374398A4 (en) 2021-08-08 2025-06-04 Viamems Technologies, Inc. Electrostatic devices to influence beams of charged particles
CN115304022B (zh) * 2022-07-07 2024-05-24 武汉大学 基于超低能团簇离子束自组装制备功能纳米结构的方法
CN116230483B (zh) * 2022-12-21 2026-08-04 上海精测半导体技术有限公司 用于真空环境中隔离高压电极的绝缘装置
EP4391006A1 (en) * 2022-12-22 2024-06-26 ASML Netherlands B.V. Charged particle apparatus, method of projecting charged particles, method of assessing a sample
CN120390972A (zh) * 2022-12-22 2025-07-29 Asml荷兰有限公司 带电粒子装置、带电粒子投射方法、样品评估方法
JP2024114189A (ja) * 2023-02-13 2024-08-23 株式会社荏原製作所 絶縁構造体、静電レンズおよび荷電粒子線装置
US20250112017A1 (en) * 2023-09-30 2025-04-03 Kla Corporation Imaging thousands of electron beams during workpiece inspection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278318A (ja) * 1987-05-11 1988-11-16 Matsushita Electric Ind Co Ltd 電極支持体
TW253971B (en) * 1994-02-21 1995-08-11 Futaba Denshi Kogyo Kk Method for driving electron gun and cathode ray tube
US20020005491A1 (en) * 2000-03-31 2002-01-17 Takayuki Yagi Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method
JP2005214908A (ja) * 2004-02-02 2005-08-11 Nhv Corporation 電子線加速器用加速管
US7045794B1 (en) * 2004-06-18 2006-05-16 Novelx, Inc. Stacked lens structure and method of use thereof for preventing electrical breakdown
TW200837801A (en) * 2007-01-05 2008-09-16 Varian Semiconductor Equipment Power supply for an ion implantation system

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207656A (en) * 1976-01-16 1980-06-17 U.S. Philips Corporation Color television display tube and method of manufacturing same
US4196373A (en) 1978-04-10 1980-04-01 General Electric Company Electron optics apparatus
US4200794A (en) 1978-11-08 1980-04-29 Control Data Corporation Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
JPS59211945A (ja) * 1983-05-18 1984-11-30 Hitachi Ltd カラ−受像管用電子銃
JPS63170818A (ja) * 1987-01-09 1988-07-14 富士電機株式会社 直流高電圧用樹脂モ−ルド絶縁体
JPH1040844A (ja) * 1996-07-26 1998-02-13 Shinko Pantec Co Ltd 高耐圧無放電対電極
JP3103800B2 (ja) 1999-03-11 2000-10-30 科学技術振興事業団 高電圧絶縁部材
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP4036417B2 (ja) * 2000-02-03 2008-01-23 キヤノン株式会社 画像形成装置
JP2002134051A (ja) * 2000-10-20 2002-05-10 Seiko Instruments Inc 電磁界重畳型レンズ及びこれを用いた電子線装置
EP1383158B1 (en) * 2002-07-16 2014-09-10 Canon Kabushiki Kaisha Charged-particle beam lens
JP4459568B2 (ja) * 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
EP2579268A1 (en) * 2003-09-05 2013-04-10 Carl Zeiss SMT GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
KR100496643B1 (ko) * 2003-10-25 2005-06-20 한국전자통신연구원 마이크로칼럼 전자빔 장치의 자체정렬 적층 금속 박막전자빔 렌즈 및 그 제작방법
WO2006093268A1 (ja) * 2005-03-03 2006-09-08 Ebara Corporation 写像投影型電子線装置及び該装置を用いた欠陥検査システム
JP2007173069A (ja) * 2005-12-22 2007-07-05 Japan Atomic Energy Agency 超低エネルギーイオン源用電極
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
KR20090052350A (ko) 2006-09-11 2009-05-25 전자빔기술센터 주식회사 전자 칼럼용 렌즈 조립체
KR101649106B1 (ko) * 2008-10-01 2016-08-19 마퍼 리쏘그라피 아이피 비.브이. 정전기 렌즈 구조

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278318A (ja) * 1987-05-11 1988-11-16 Matsushita Electric Ind Co Ltd 電極支持体
TW253971B (en) * 1994-02-21 1995-08-11 Futaba Denshi Kogyo Kk Method for driving electron gun and cathode ray tube
US20020005491A1 (en) * 2000-03-31 2002-01-17 Takayuki Yagi Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method
JP2005214908A (ja) * 2004-02-02 2005-08-11 Nhv Corporation 電子線加速器用加速管
US7045794B1 (en) * 2004-06-18 2006-05-16 Novelx, Inc. Stacked lens structure and method of use thereof for preventing electrical breakdown
TW200837801A (en) * 2007-01-05 2008-09-16 Varian Semiconductor Equipment Power supply for an ion implantation system

Also Published As

Publication number Publication date
WO2010037832A2 (en) 2010-04-08
USRE46452E1 (en) 2017-06-27
KR101649106B1 (ko) 2016-08-19
JP5420670B2 (ja) 2014-02-19
WO2010037832A3 (en) 2010-06-10
JP2012504843A (ja) 2012-02-23
EP2406810A2 (en) 2012-01-18
US20170309438A1 (en) 2017-10-26
US8198602B2 (en) 2012-06-12
WO2010037832A4 (en) 2010-08-12
CN102232237A (zh) 2011-11-02
CN102232237B (zh) 2014-09-24
EP2406810B1 (en) 2014-09-17
US20110216299A1 (en) 2011-09-08
KR20110081253A (ko) 2011-07-13
TW201032258A (en) 2010-09-01

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