TWI479530B - 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 - Google Patents

靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 Download PDF

Info

Publication number
TWI479530B
TWI479530B TW098133357A TW98133357A TWI479530B TW I479530 B TWI479530 B TW I479530B TW 098133357 A TW098133357 A TW 098133357A TW 98133357 A TW98133357 A TW 98133357A TW I479530 B TWI479530 B TW I479530B
Authority
TW
Taiwan
Prior art keywords
electrostatic lens
hole
insulating structure
insulating
sheet
Prior art date
Application number
TW098133357A
Other languages
English (en)
Chinese (zh)
Other versions
TW201032258A (en
Inventor
Stijn Willem Herman Karel Steenbrink
Johan Joost Koning
Peter Veltman
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW201032258A publication Critical patent/TW201032258A/zh
Application granted granted Critical
Publication of TWI479530B publication Critical patent/TWI479530B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Shutters For Cameras (AREA)
TW098133357A 2008-10-01 2009-10-01 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法 TWI479530B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10168208P 2008-10-01 2008-10-01

Publications (2)

Publication Number Publication Date
TW201032258A TW201032258A (en) 2010-09-01
TWI479530B true TWI479530B (zh) 2015-04-01

Family

ID=41466906

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098133357A TWI479530B (zh) 2008-10-01 2009-10-01 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法

Country Status (7)

Country Link
US (3) US8198602B2 (enExample)
EP (1) EP2406810B1 (enExample)
JP (1) JP5420670B2 (enExample)
KR (1) KR101649106B1 (enExample)
CN (1) CN102232237B (enExample)
TW (1) TWI479530B (enExample)
WO (1) WO2010037832A2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102232237B (zh) * 2008-10-01 2014-09-24 迈普尔平版印刷Ip有限公司 静电透镜构件
CN104795303B (zh) 2009-05-20 2017-12-05 迈普尔平版印刷Ip有限公司 用于处理图案数据的方法
EP2443647B1 (en) 2009-05-20 2016-10-05 Mapper Lithography IP B.V. Pattern data conversion for lithography system
JP2012033297A (ja) * 2010-07-29 2012-02-16 Hitachi High-Technologies Corp 電子銃
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
EP2699966B1 (en) 2011-04-22 2021-04-07 ASML Netherlands B.V. Network architecture and protocol for cluster of lithography machines
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
TWI514089B (zh) 2011-04-28 2015-12-21 Mapper Lithography Ip Bv 在微影系統中用於轉移基板的設備
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
CN103959919A (zh) 2011-09-28 2014-07-30 迈普尔平版印刷Ip有限公司 等离子产生器
JP2013168396A (ja) * 2012-02-14 2013-08-29 Canon Inc 静電型の荷電粒子線レンズ及び荷電粒子線装置
WO2013142068A1 (en) * 2012-03-19 2013-09-26 Kla-Tencor Corporation Pillar-supported array of micro electron lenses
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN104428866A (zh) 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
JP2014063866A (ja) * 2012-09-21 2014-04-10 Canon Inc シリコン基板の加工方法及び荷電粒子線レンズの製造方法
US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
CN107111251B (zh) 2014-11-14 2020-10-20 Asml荷兰有限公司 用于在光刻系统中转移基材的加载锁定系统和方法
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
WO2016145458A1 (en) * 2015-03-10 2016-09-15 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
JP7232935B2 (ja) * 2019-04-10 2023-03-03 エーエスエムエル ネザーランズ ビー．ブイ． 粒子ビーム装置に適したステージ装置
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
EP4214736A2 (en) * 2020-09-17 2023-07-26 ASML Netherlands B.V. Charged particle assessment tool, inspection method
WO2022135926A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Electron lens
EP4020517A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
EP4020516A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
IL303983A (en) 2020-12-23 2023-08-01 Asml Netherlands Bv Charged particle optical device
EP4092712A1 (en) 2021-05-18 2022-11-23 ASML Netherlands B.V. Charged particle optical device and method using it
WO2023018496A1 (en) * 2021-08-08 2023-02-16 ViaMEMS Technologies, Inc. Electrostatic devices to influence beams of charged particles
CN115304022B (zh) * 2022-07-07 2024-05-24 武汉大学 基于超低能团簇离子束自组装制备功能纳米结构的方法
CN120390972A (zh) * 2022-12-22 2025-07-29 Asml荷兰有限公司 带电粒子装置、带电粒子投射方法、样品评估方法
EP4391006A1 (en) * 2022-12-22 2024-06-26 ASML Netherlands B.V. Charged particle apparatus, method of projecting charged particles, method of assessing a sample
JP2024114189A (ja) * 2023-02-13 2024-08-23 株式会社荏原製作所 絶縁構造体、静電レンズおよび荷電粒子線装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278318A (ja) * 1987-05-11 1988-11-16 Matsushita Electric Ind Co Ltd 電極支持体
TW253971B (en) * 1994-02-21 1995-08-11 Futaba Denshi Kogyo Kk Method for driving electron gun and cathode ray tube
US20020005491A1 (en) * 2000-03-31 2002-01-17 Takayuki Yagi Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method
JP2005214908A (ja) * 2004-02-02 2005-08-11 Nhv Corporation 電子線加速器用加速管
US7045794B1 (en) * 2004-06-18 2006-05-16 Novelx, Inc. Stacked lens structure and method of use thereof for preventing electrical breakdown
TW200837801A (en) * 2007-01-05 2008-09-16 Varian Semiconductor Equipment Power supply for an ion implantation system

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207656A (en) * 1976-01-16 1980-06-17 U.S. Philips Corporation Color television display tube and method of manufacturing same
US4196373A (en) 1978-04-10 1980-04-01 General Electric Company Electron optics apparatus
US4200794A (en) 1978-11-08 1980-04-29 Control Data Corporation Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
JPS59211945A (ja) * 1983-05-18 1984-11-30 Hitachi Ltd カラ−受像管用電子銃
JPS63170818A (ja) * 1987-01-09 1988-07-14 富士電機株式会社 直流高電圧用樹脂モ−ルド絶縁体
JPH1040844A (ja) * 1996-07-26 1998-02-13 Shinko Pantec Co Ltd 高耐圧無放電対電極
JP3103800B2 (ja) 1999-03-11 2000-10-30 科学技術振興事業団 高電圧絶縁部材
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP4036417B2 (ja) * 2000-02-03 2008-01-23 キヤノン株式会社 画像形成装置
JP2002134051A (ja) * 2000-10-20 2002-05-10 Seiko Instruments Inc 電磁界重畳型レンズ及びこれを用いた電子線装置
EP2434522B8 (en) * 2002-07-16 2014-07-23 Canon Kabushiki Kaisha Multi-charged beam lens, charged-particle beam exposure apparatus using the same, and device manufacturing method
JP4459568B2 (ja) 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
JP4794444B2 (ja) * 2003-09-05 2011-10-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 粒子光学システム及び装置、並びに、かかるシステム及び装置用の粒子光学部品
KR100496643B1 (ko) * 2003-10-25 2005-06-20 한국전자통신연구원 마이크로칼럼 전자빔 장치의 자체정렬 적층 금속 박막전자빔 렌즈 및 그 제작방법
US20090212213A1 (en) * 2005-03-03 2009-08-27 Ebara Corporation Projection electron beam apparatus and defect inspection system using the apparatus
JP2007173069A (ja) * 2005-12-22 2007-07-05 Japan Atomic Energy Agency 超低エネルギーイオン源用電極
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
WO2008032971A1 (en) 2006-09-11 2008-03-20 Cebt Co. Ltd. Lens assembly for electron column
CN102232237B (zh) * 2008-10-01 2014-09-24 迈普尔平版印刷Ip有限公司 静电透镜构件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278318A (ja) * 1987-05-11 1988-11-16 Matsushita Electric Ind Co Ltd 電極支持体
TW253971B (en) * 1994-02-21 1995-08-11 Futaba Denshi Kogyo Kk Method for driving electron gun and cathode ray tube
US20020005491A1 (en) * 2000-03-31 2002-01-17 Takayuki Yagi Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method
JP2005214908A (ja) * 2004-02-02 2005-08-11 Nhv Corporation 電子線加速器用加速管
US7045794B1 (en) * 2004-06-18 2006-05-16 Novelx, Inc. Stacked lens structure and method of use thereof for preventing electrical breakdown
TW200837801A (en) * 2007-01-05 2008-09-16 Varian Semiconductor Equipment Power supply for an ion implantation system

Also Published As

Publication number Publication date
WO2010037832A3 (en) 2010-06-10
US8198602B2 (en) 2012-06-12
EP2406810B1 (en) 2014-09-17
JP5420670B2 (ja) 2014-02-19
KR20110081253A (ko) 2011-07-13
CN102232237B (zh) 2014-09-24
KR101649106B1 (ko) 2016-08-19
US20110216299A1 (en) 2011-09-08
USRE46452E1 (en) 2017-06-27
EP2406810A2 (en) 2012-01-18
JP2012504843A (ja) 2012-02-23
WO2010037832A2 (en) 2010-04-08
CN102232237A (zh) 2011-11-02
TW201032258A (en) 2010-09-01
US20170309438A1 (en) 2017-10-26
WO2010037832A4 (en) 2010-08-12

Similar Documents

Publication Publication Date Title
TWI479530B (zh) 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
TWI480914B (zh) 末端模組及帶電粒子的多子束系統
JP7689139B2 (ja) マルチビーム発生ユニットおよびマルチビーム偏向ユニットの特定の改善
KR101570974B1 (ko) 투사 렌즈 배열체
US20140197325A1 (en) Charged particle beam lens and exposure apparatus using the same
TW201007371A (en) Imaging system
TW201729233A (zh) 靜電多極元件、靜電多極裝置及製造靜電多極元件的方法
JP2013004680A (ja) 荷電粒子線レンズ
JP4541798B2 (ja) 荷電粒子線レンズアレイ、及び該荷電粒子線レンズアレイを用いた荷電粒子線露光装置
JP2006049703A (ja) 荷電粒子線レンズアレイ、及び該荷電粒子線レンズアレイを用いた荷電粒子線露光装置
JP2013030567A (ja) 荷電粒子線レンズアレイ
JP2025521419A (ja) 電子光学アセンブリ用の絶縁スペーサ