KR101649106B1 - 정전기 렌즈 구조 - Google Patents

정전기 렌즈 구조 Download PDF

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Publication number
KR101649106B1
KR101649106B1 KR1020117009983A KR20117009983A KR101649106B1 KR 101649106 B1 KR101649106 B1 KR 101649106B1 KR 1020117009983 A KR1020117009983 A KR 1020117009983A KR 20117009983 A KR20117009983 A KR 20117009983A KR 101649106 B1 KR101649106 B1 KR 101649106B1
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KR
South Korea
Prior art keywords
conductive plate
electrostatic lens
insulating structure
insulating
plate
Prior art date
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KR1020117009983A
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English (en)
Korean (ko)
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KR20110081253A (ko
Inventor
스틴 윌렘 헤르만 캐렐 스틴브링크
요한 요스트 코닝
피터 벨트만
Original Assignee
마퍼 리쏘그라피 아이피 비.브이.
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Publication of KR20110081253A publication Critical patent/KR20110081253A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Shutters For Cameras (AREA)
KR1020117009983A 2008-10-01 2009-10-01 정전기 렌즈 구조 Active KR101649106B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10168208P 2008-10-01 2008-10-01
US61/101,682 2008-10-01

Publications (2)

Publication Number Publication Date
KR20110081253A KR20110081253A (ko) 2011-07-13
KR101649106B1 true KR101649106B1 (ko) 2016-08-19

Family

ID=41466906

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117009983A Active KR101649106B1 (ko) 2008-10-01 2009-10-01 정전기 렌즈 구조

Country Status (7)

Country Link
US (3) US8198602B2 (enExample)
EP (1) EP2406810B1 (enExample)
JP (1) JP5420670B2 (enExample)
KR (1) KR101649106B1 (enExample)
CN (1) CN102232237B (enExample)
TW (1) TWI479530B (enExample)
WO (1) WO2010037832A2 (enExample)

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WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
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EP2700081B1 (en) 2011-04-22 2022-11-02 ASML Netherlands B.V. Network architecture for lithography machine cluster
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TWI514089B (zh) 2011-04-28 2015-12-21 Mapper Lithography Ip Bv 在微影系統中用於轉移基板的設備
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US8890092B2 (en) * 2013-01-28 2014-11-18 Industry—University Cooperation Foundation Sunmoon University Multi-particle beam column having an electrode layer including an eccentric aperture
WO2015024956A1 (en) 2013-08-23 2015-02-26 Mapper Lithography Ip B.V. Drying device for use in a lithography system
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
WO2016145458A1 (en) * 2015-03-10 2016-09-15 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
JP7232935B2 (ja) * 2019-04-10 2023-03-03 エーエスエムエル ネザーランズ ビー．ブイ． 粒子ビーム装置に適したステージ装置
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
WO2022058253A2 (en) * 2020-09-17 2022-03-24 Asml Netherlands B.V. Charged particle assessment tool, inspection method
EP4020516A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
JP2024501654A (ja) 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子光学デバイス
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Also Published As

Publication number Publication date
CN102232237B (zh) 2014-09-24
JP5420670B2 (ja) 2014-02-19
JP2012504843A (ja) 2012-02-23
CN102232237A (zh) 2011-11-02
WO2010037832A3 (en) 2010-06-10
KR20110081253A (ko) 2011-07-13
US8198602B2 (en) 2012-06-12
TWI479530B (zh) 2015-04-01
EP2406810B1 (en) 2014-09-17
USRE46452E1 (en) 2017-06-27
TW201032258A (en) 2010-09-01
EP2406810A2 (en) 2012-01-18
US20170309438A1 (en) 2017-10-26
WO2010037832A2 (en) 2010-04-08
US20110216299A1 (en) 2011-09-08
WO2010037832A4 (en) 2010-08-12

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