JP2013544030A5 - - Google Patents

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Publication number
JP2013544030A5
JP2013544030A5 JP2013538224A JP2013538224A JP2013544030A5 JP 2013544030 A5 JP2013544030 A5 JP 2013544030A5 JP 2013538224 A JP2013538224 A JP 2013538224A JP 2013538224 A JP2013538224 A JP 2013538224A JP 2013544030 A5 JP2013544030 A5 JP 2013544030A5
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JP
Japan
Prior art keywords
aperture array
array element
aperture
plate
regions
Prior art date
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Application number
JP2013538224A
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English (en)
Japanese (ja)
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JP6133212B2 (ja
JP2013544030A (ja
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Publication date
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Priority claimed from PCT/EP2011/070030 external-priority patent/WO2012065941A1/en
Publication of JP2013544030A publication Critical patent/JP2013544030A/ja
Publication of JP2013544030A5 publication Critical patent/JP2013544030A5/ja
Application granted granted Critical
Publication of JP6133212B2 publication Critical patent/JP6133212B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013538224A 2010-11-13 2011-11-14 アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム Active JP6133212B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41520010P 2010-11-18 2010-11-18
US61/415,200 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
PCT/EP2011/070030 WO2012065941A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with aperture array cooling

Publications (3)

Publication Number Publication Date
JP2013544030A JP2013544030A (ja) 2013-12-09
JP2013544030A5 true JP2013544030A5 (enExample) 2015-01-15
JP6133212B2 JP6133212B2 (ja) 2017-05-24

Family

ID=45065871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538224A Active JP6133212B2 (ja) 2010-11-13 2011-11-14 アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム

Country Status (6)

Country Link
US (1) US8558196B2 (enExample)
EP (1) EP2638560B1 (enExample)
JP (1) JP6133212B2 (enExample)
KR (1) KR101755577B1 (enExample)
TW (1) TWI562183B (enExample)
WO (1) WO2012065941A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
EP2850635B1 (en) * 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
US9724553B2 (en) * 2013-03-15 2017-08-08 Arqex Outdoor Fitness Systems, Llc Resistance band assembly and a method of varying a resistive force applied thereby
KR102377771B1 (ko) * 2014-06-13 2022-03-23 인텔 코포레이션 Ｅ 빔 스태거형 빔 애퍼처 어레이
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
KR20190032592A (ko) * 2016-08-08 2019-03-27 에이에스엠엘 네델란즈 비.브이. 전자 이미터 및 이의 제작 방법
US10663746B2 (en) * 2016-11-09 2020-05-26 Advanced Semiconductor Engineering, Inc. Collimator, optical device and method of manufacturing the same
WO2019031093A1 (en) * 2017-08-08 2019-02-14 Mapper Lithography Ip B.V. CHARGED PARTICLE BLOCKING ELEMENT, EXPOSURE APPARATUS COMPRISING SUCH AN ELEMENT, AND METHOD OF USING SUCH AN EXPOSURE APPARATUS
EP3828914A1 (en) * 2019-02-27 2021-06-02 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
EP3716313A1 (en) * 2019-03-28 2020-09-30 ASML Netherlands B.V. Aperture array with integrated current measurement
EP4086933A1 (en) 2021-05-03 2022-11-09 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
EP4260357B1 (en) 2020-12-14 2025-01-01 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
EP4268256A1 (en) 2020-12-23 2023-11-01 ASML Netherlands B.V. Electron lens
EP4020517A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
US11615939B2 (en) * 2021-03-24 2023-03-28 Kla Corporation Shaped aperture set for multi-beam array configurations
JPWO2024180616A1 (enExample) * 2023-02-27 2024-09-06

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224846A (ja) * 1998-02-04 1999-08-17 Nikon Corp レチクル照明光学系
JPH11354063A (ja) * 1998-06-05 1999-12-24 Nikon Corp 電子線転写装置
JP2000030647A (ja) * 1998-07-10 2000-01-28 Advantest Corp 荷電粒子ビーム露光装置
GB2351567A (en) 1999-04-19 2001-01-03 Ims Ionen Mikrofab Syst Transmission mask and mask-exposure arrangement for projection lithography
JP2001237161A (ja) * 2000-02-23 2001-08-31 Nikon Corp 荷電粒子線光学系及び電子光学系
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
KR101368027B1 (ko) 2002-10-25 2014-02-26 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 장치
EP3671804A1 (en) 2002-10-30 2020-06-24 ASML Netherlands B.V. Electron beam exposure system
WO2004081910A2 (en) 2003-03-10 2004-09-23 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
EP1830384B1 (en) 2003-05-28 2011-09-14 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
GB2412232A (en) * 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
JP4652829B2 (ja) * 2005-01-26 2011-03-16 キヤノン株式会社 電子線露光装置およびデバイス製造方法
EP1746630B1 (en) 2005-07-20 2009-02-25 Carl Zeiss SMS GmbH Charged particle beam exposure system and beam manipulating arrangement
EP2002458B1 (en) * 2006-04-03 2009-11-04 IMS Nanofabrication AG Particle-beam exposure apparatus with overall-modulation of a patterned beam
SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
JP2011517131A (ja) * 2008-04-15 2011-05-26 マッパー・リソグラフィー・アイピー・ビー．ブイ． 小ビームブランカ構成体
WO2010109647A1 (ja) * 2009-03-27 2010-09-30 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638559B1 (en) * 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator

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