JP6133212B2 - アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム - Google Patents

アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム Download PDF

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JP6133212B2
JP6133212B2 JP2013538224A JP2013538224A JP6133212B2 JP 6133212 B2 JP6133212 B2 JP 6133212B2 JP 2013538224 A JP2013538224 A JP 2013538224A JP 2013538224 A JP2013538224 A JP 2013538224A JP 6133212 B2 JP6133212 B2 JP 6133212B2
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aperture array
aperture
array element
regions
charged particle
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Japanese (ja)
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JP2013544030A (ja
JP2013544030A5 (enExample
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ビエランド、マルコ・ヤン−ヤコ
ファン・ビーン、アレクサンダー・ヘンドリク・ビンセント
デ・ヨン、ヘンドリク・ヤン
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP2013538224A 2010-11-13 2011-11-14 アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム Active JP6133212B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41520010P 2010-11-18 2010-11-18
US61/415,200 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
PCT/EP2011/070030 WO2012065941A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with aperture array cooling

Publications (3)

Publication Number Publication Date
JP2013544030A JP2013544030A (ja) 2013-12-09
JP2013544030A5 JP2013544030A5 (enExample) 2015-01-15
JP6133212B2 true JP6133212B2 (ja) 2017-05-24

Family

ID=45065871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538224A Active JP6133212B2 (ja) 2010-11-13 2011-11-14 アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム

Country Status (6)

Country Link
US (1) US8558196B2 (enExample)
EP (1) EP2638560B1 (enExample)
JP (1) JP6133212B2 (enExample)
KR (1) KR101755577B1 (enExample)
TW (1) TWI562183B (enExample)
WO (1) WO2012065941A1 (enExample)

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US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
KR101945964B1 (ko) * 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
US9724553B2 (en) * 2013-03-15 2017-08-08 Arqex Outdoor Fitness Systems, Llc Resistance band assembly and a method of varying a resistive force applied thereby
CN106415775B (zh) 2014-06-13 2019-06-04 英特尔公司 电子束交错的束孔阵列
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
US10784071B2 (en) * 2016-08-08 2020-09-22 Asml Netherlands B.V. Electron emitter and method of fabricating same
US10663746B2 (en) * 2016-11-09 2020-05-26 Advanced Semiconductor Engineering, Inc. Collimator, optical device and method of manufacturing the same
KR102596854B1 (ko) * 2017-08-08 2023-11-02 에이에스엠엘 네델란즈 비.브이. 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법
EP3703100A1 (en) * 2019-02-27 2020-09-02 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
EP3716313A1 (en) * 2019-03-28 2020-09-30 ASML Netherlands B.V. Aperture array with integrated current measurement
KR20230118106A (ko) 2020-12-14 2023-08-10 에이에스엠엘 네델란즈 비.브이. 하전 입자의 다중 빔을 사용하여 샘플을 프로세싱하는 하전 입자 시스템, 방법
EP4086933A1 (en) 2021-05-03 2022-11-09 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
JP2024501655A (ja) 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電子レンズ
EP4020517A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
US11615939B2 (en) * 2021-03-24 2023-03-28 Kla Corporation Shaped aperture set for multi-beam array configurations
JPWO2024180616A1 (enExample) * 2023-02-27 2024-09-06

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JPH11354063A (ja) * 1998-06-05 1999-12-24 Nikon Corp 電子線転写装置
JP2000030647A (ja) * 1998-07-10 2000-01-28 Advantest Corp 荷電粒子ビーム露光装置
GB2351567A (en) * 1999-04-19 2001-01-03 Ims Ionen Mikrofab Syst Transmission mask and mask-exposure arrangement for projection lithography
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JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
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KR101060557B1 (ko) 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
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JP4949843B2 (ja) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビームレット露光システム
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Also Published As

Publication number Publication date
US8558196B2 (en) 2013-10-15
JP2013544030A (ja) 2013-12-09
KR101755577B1 (ko) 2017-07-07
KR20130126936A (ko) 2013-11-21
WO2012065941A1 (en) 2012-05-24
TWI562183B (en) 2016-12-11
TW201236045A (en) 2012-09-01
EP2638560A1 (en) 2013-09-18
US20120292524A1 (en) 2012-11-22
EP2638560B1 (en) 2017-02-22

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