TWI562183B - Aperture array element, charged particle beam generator and charged particle lithography system - Google Patents

Aperture array element, charged particle beam generator and charged particle lithography system

Info

Publication number
TWI562183B
TWI562183B TW100141411A TW100141411A TWI562183B TW I562183 B TWI562183 B TW I562183B TW 100141411 A TW100141411 A TW 100141411A TW 100141411 A TW100141411 A TW 100141411A TW I562183 B TWI562183 B TW I562183B
Authority
TW
Taiwan
Prior art keywords
charged particle
array element
beam generator
lithography system
aperture array
Prior art date
Application number
TW100141411A
Other languages
English (en)
Chinese (zh)
Other versions
TW201236045A (en
Inventor
Marco Jan-Jaco Wieland
Veen Alexander Hendrik Vincent Van
Jong Hendrik Jan De
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW201236045A publication Critical patent/TW201236045A/zh
Application granted granted Critical
Publication of TWI562183B publication Critical patent/TWI562183B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
TW100141411A 2010-11-13 2011-11-14 Aperture array element, charged particle beam generator and charged particle lithography system TWI562183B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US41520010P 2010-11-18 2010-11-18
US42171710P 2010-12-10 2010-12-10

Publications (2)

Publication Number Publication Date
TW201236045A TW201236045A (en) 2012-09-01
TWI562183B true TWI562183B (en) 2016-12-11

Family

ID=45065871

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100141411A TWI562183B (en) 2010-11-13 2011-11-14 Aperture array element, charged particle beam generator and charged particle lithography system

Country Status (6)

Country Link
US (1) US8558196B2 (enExample)
EP (1) EP2638560B1 (enExample)
JP (1) JP6133212B2 (enExample)
KR (1) KR101755577B1 (enExample)
TW (1) TWI562183B (enExample)
WO (1) WO2012065941A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
KR101945964B1 (ko) * 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
US9724553B2 (en) * 2013-03-15 2017-08-08 Arqex Outdoor Fitness Systems, Llc Resistance band assembly and a method of varying a resistive force applied thereby
CN106415775B (zh) 2014-06-13 2019-06-04 英特尔公司 电子束交错的束孔阵列
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
US10784071B2 (en) * 2016-08-08 2020-09-22 Asml Netherlands B.V. Electron emitter and method of fabricating same
US10663746B2 (en) * 2016-11-09 2020-05-26 Advanced Semiconductor Engineering, Inc. Collimator, optical device and method of manufacturing the same
KR102596854B1 (ko) * 2017-08-08 2023-11-02 에이에스엠엘 네델란즈 비.브이. 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법
EP3703100A1 (en) * 2019-02-27 2020-09-02 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
EP3716313A1 (en) * 2019-03-28 2020-09-30 ASML Netherlands B.V. Aperture array with integrated current measurement
KR20230118106A (ko) 2020-12-14 2023-08-10 에이에스엠엘 네델란즈 비.브이. 하전 입자의 다중 빔을 사용하여 샘플을 프로세싱하는 하전 입자 시스템, 방법
EP4086933A1 (en) 2021-05-03 2022-11-09 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
JP2024501655A (ja) 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電子レンズ
EP4020517A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
US11615939B2 (en) * 2021-03-24 2023-03-28 Kla Corporation Shaped aperture set for multi-beam array configurations
JPWO2024180616A1 (enExample) * 2023-02-27 2024-09-06

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JP2002203776A (ja) * 2000-12-28 2002-07-19 Advantest Corp 電子ビーム露光装置及び電子ビーム成形部材
JP2006140267A (ja) * 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
TW200942976A (en) * 2007-12-17 2009-10-16 Asml Holding Nv Lithographic method and apparatus
TW201003711A (en) * 2008-04-15 2010-01-16 Mapper Lithography Ip Bv Projection lens arrangement
WO2010109647A1 (ja) * 2009-03-27 2010-09-30 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置

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JPH11224846A (ja) * 1998-02-04 1999-08-17 Nikon Corp レチクル照明光学系
JPH11354063A (ja) * 1998-06-05 1999-12-24 Nikon Corp 電子線転写装置
JP2000030647A (ja) * 1998-07-10 2000-01-28 Advantest Corp 荷電粒子ビーム露光装置
GB2351567A (en) * 1999-04-19 2001-01-03 Ims Ionen Mikrofab Syst Transmission mask and mask-exposure arrangement for projection lithography
JP2001237161A (ja) * 2000-02-23 2001-08-31 Nikon Corp 荷電粒子線光学系及び電子光学系
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
KR101060557B1 (ko) 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
KR101077098B1 (ko) 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4949843B2 (ja) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビームレット露光システム
GB2412232A (en) * 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
JP4652829B2 (ja) * 2005-01-26 2011-03-16 キヤノン株式会社 電子線露光装置およびデバイス製造方法
DE602005012945D1 (de) * 2005-07-20 2009-04-09 Zeiss Carl Sms Gmbh Teilchenstrahlbelichtungssystem und Vorrichtung zur Strahlbeeinflussung
WO2007112465A1 (en) * 2006-04-03 2007-10-11 Ims Nanofabrication Ag Particle-beam exposure apparatus with overall-modulation of a patterned beam
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
WO2012062934A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203776A (ja) * 2000-12-28 2002-07-19 Advantest Corp 電子ビーム露光装置及び電子ビーム成形部材
JP2006140267A (ja) * 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
TW200942976A (en) * 2007-12-17 2009-10-16 Asml Holding Nv Lithographic method and apparatus
TW201003711A (en) * 2008-04-15 2010-01-16 Mapper Lithography Ip Bv Projection lens arrangement
WO2010109647A1 (ja) * 2009-03-27 2010-09-30 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置

Also Published As

Publication number Publication date
US8558196B2 (en) 2013-10-15
JP2013544030A (ja) 2013-12-09
KR101755577B1 (ko) 2017-07-07
KR20130126936A (ko) 2013-11-21
WO2012065941A1 (en) 2012-05-24
JP6133212B2 (ja) 2017-05-24
TW201236045A (en) 2012-09-01
EP2638560A1 (en) 2013-09-18
US20120292524A1 (en) 2012-11-22
EP2638560B1 (en) 2017-02-22

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