KR101755577B1 - 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템 - Google Patents

애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템 Download PDF

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KR101755577B1
KR101755577B1 KR1020137015246A KR20137015246A KR101755577B1 KR 101755577 B1 KR101755577 B1 KR 101755577B1 KR 1020137015246 A KR1020137015246 A KR 1020137015246A KR 20137015246 A KR20137015246 A KR 20137015246A KR 101755577 B1 KR101755577 B1 KR 101755577B1
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aperture array
array element
aperture
beamlets
apertures
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Korean (ko)
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KR20130126936A (ko
Inventor
마르코 얀-야코 빌란트
알렉산데르 헨드릭 빈센트 반 벤
헨드릭 얀 데 종
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마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
KR1020137015246A 2010-11-13 2011-11-14 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템 Active KR101755577B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41520010P 2010-11-18 2010-11-18
US61/415,200 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
PCT/EP2011/070030 WO2012065941A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with aperture array cooling

Publications (2)

Publication Number Publication Date
KR20130126936A KR20130126936A (ko) 2013-11-21
KR101755577B1 true KR101755577B1 (ko) 2017-07-07

Family

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Family Applications (1)

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KR1020137015246A Active KR101755577B1 (ko) 2010-11-13 2011-11-14 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템

Country Status (6)

Country Link
US (1) US8558196B2 (enExample)
EP (1) EP2638560B1 (enExample)
JP (1) JP6133212B2 (enExample)
KR (1) KR101755577B1 (enExample)
TW (1) TWI562183B (enExample)
WO (1) WO2012065941A1 (enExample)

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US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
KR101945964B1 (ko) * 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
US9724553B2 (en) * 2013-03-15 2017-08-08 Arqex Outdoor Fitness Systems, Llc Resistance band assembly and a method of varying a resistive force applied thereby
CN106415775B (zh) 2014-06-13 2019-06-04 英特尔公司 电子束交错的束孔阵列
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
US10784071B2 (en) * 2016-08-08 2020-09-22 Asml Netherlands B.V. Electron emitter and method of fabricating same
US10663746B2 (en) * 2016-11-09 2020-05-26 Advanced Semiconductor Engineering, Inc. Collimator, optical device and method of manufacturing the same
KR102596854B1 (ko) * 2017-08-08 2023-11-02 에이에스엠엘 네델란즈 비.브이. 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법
EP3703100A1 (en) * 2019-02-27 2020-09-02 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
EP3716313A1 (en) * 2019-03-28 2020-09-30 ASML Netherlands B.V. Aperture array with integrated current measurement
KR20230118106A (ko) 2020-12-14 2023-08-10 에이에스엠엘 네델란즈 비.브이. 하전 입자의 다중 빔을 사용하여 샘플을 프로세싱하는 하전 입자 시스템, 방법
EP4086933A1 (en) 2021-05-03 2022-11-09 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
JP2024501655A (ja) 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電子レンズ
EP4020517A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
US11615939B2 (en) * 2021-03-24 2023-03-28 Kla Corporation Shaped aperture set for multi-beam array configurations
JPWO2024180616A1 (enExample) * 2023-02-27 2024-09-06

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JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
WO2009127658A1 (en) * 2008-04-15 2009-10-22 Mapper Lithography Ip B.V. Projection lens arrangement
WO2010109647A1 (ja) * 2009-03-27 2010-09-30 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置

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KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4949843B2 (ja) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビームレット露光システム
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JP2002203776A (ja) * 2000-12-28 2002-07-19 Advantest Corp 電子ビーム露光装置及び電子ビーム成形部材
JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
WO2009127658A1 (en) * 2008-04-15 2009-10-22 Mapper Lithography Ip B.V. Projection lens arrangement
WO2010109647A1 (ja) * 2009-03-27 2010-09-30 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置

Also Published As

Publication number Publication date
US8558196B2 (en) 2013-10-15
JP2013544030A (ja) 2013-12-09
KR20130126936A (ko) 2013-11-21
WO2012065941A1 (en) 2012-05-24
TWI562183B (en) 2016-12-11
JP6133212B2 (ja) 2017-05-24
TW201236045A (en) 2012-09-01
EP2638560A1 (en) 2013-09-18
US20120292524A1 (en) 2012-11-22
EP2638560B1 (en) 2017-02-22

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