KR101755577B1 - 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템 - Google Patents

애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템 Download PDF

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KR101755577B1
KR101755577B1 KR1020137015246A KR20137015246A KR101755577B1 KR 101755577 B1 KR101755577 B1 KR 101755577B1 KR 1020137015246 A KR1020137015246 A KR 1020137015246A KR 20137015246 A KR20137015246 A KR 20137015246A KR 101755577 B1 KR101755577 B1 KR 101755577B1
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South Korea
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aperture array
array element
aperture
beamlets
apertures
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KR20130126936A (ko
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마르코 얀-야코 빌란트
알렉산데르 헨드릭 빈센트 반 벤
헨드릭 얀 데 종
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마퍼 리쏘그라피 아이피 비.브이.
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
KR1020137015246A 2010-11-13 2011-11-14 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템 Active KR101755577B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41520010P 2010-11-18 2010-11-18
US61/415,200 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
PCT/EP2011/070030 WO2012065941A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with aperture array cooling

Publications (2)

Publication Number Publication Date
KR20130126936A KR20130126936A (ko) 2013-11-21
KR101755577B1 true KR101755577B1 (ko) 2017-07-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137015246A Active KR101755577B1 (ko) 2010-11-13 2011-11-14 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템

Country Status (6)

Country Link
US (1) US8558196B2 (enExample)
EP (1) EP2638560B1 (enExample)
JP (1) JP6133212B2 (enExample)
KR (1) KR101755577B1 (enExample)
TW (1) TWI562183B (enExample)
WO (1) WO2012065941A1 (enExample)

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JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
EP2850635B1 (en) * 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
US9724553B2 (en) * 2013-03-15 2017-08-08 Arqex Outdoor Fitness Systems, Llc Resistance band assembly and a method of varying a resistive force applied thereby
KR102377771B1 (ko) * 2014-06-13 2022-03-23 인텔 코포레이션 Ｅ 빔 스태거형 빔 애퍼처 어레이
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
KR20190032592A (ko) * 2016-08-08 2019-03-27 에이에스엠엘 네델란즈 비.브이. 전자 이미터 및 이의 제작 방법
US10663746B2 (en) * 2016-11-09 2020-05-26 Advanced Semiconductor Engineering, Inc. Collimator, optical device and method of manufacturing the same
WO2019031093A1 (en) * 2017-08-08 2019-02-14 Mapper Lithography Ip B.V. CHARGED PARTICLE BLOCKING ELEMENT, EXPOSURE APPARATUS COMPRISING SUCH AN ELEMENT, AND METHOD OF USING SUCH AN EXPOSURE APPARATUS
EP3828914A1 (en) * 2019-02-27 2021-06-02 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
EP3716313A1 (en) * 2019-03-28 2020-09-30 ASML Netherlands B.V. Aperture array with integrated current measurement
EP4086933A1 (en) 2021-05-03 2022-11-09 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
EP4260357B1 (en) 2020-12-14 2025-01-01 ASML Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
EP4268256A1 (en) 2020-12-23 2023-11-01 ASML Netherlands B.V. Electron lens
EP4020517A1 (en) 2020-12-23 2022-06-29 ASML Netherlands B.V. Electron-optical device
US11615939B2 (en) * 2021-03-24 2023-03-28 Kla Corporation Shaped aperture set for multi-beam array configurations
JPWO2024180616A1 (enExample) * 2023-02-27 2024-09-06

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JP2002203776A (ja) * 2000-12-28 2002-07-19 Advantest Corp 電子ビーム露光装置及び電子ビーム成形部材
JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
WO2009127658A1 (en) * 2008-04-15 2009-10-22 Mapper Lithography Ip B.V. Projection lens arrangement
WO2010109647A1 (ja) * 2009-03-27 2010-09-30 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置

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JPH11224846A (ja) * 1998-02-04 1999-08-17 Nikon Corp レチクル照明光学系
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JP2000030647A (ja) * 1998-07-10 2000-01-28 Advantest Corp 荷電粒子ビーム露光装置
GB2351567A (en) 1999-04-19 2001-01-03 Ims Ionen Mikrofab Syst Transmission mask and mask-exposure arrangement for projection lithography
JP2001237161A (ja) * 2000-02-23 2001-08-31 Nikon Corp 荷電粒子線光学系及び電子光学系
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
KR101368027B1 (ko) 2002-10-25 2014-02-26 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 장치
EP3671804A1 (en) 2002-10-30 2020-06-24 ASML Netherlands B.V. Electron beam exposure system
WO2004081910A2 (en) 2003-03-10 2004-09-23 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
EP1830384B1 (en) 2003-05-28 2011-09-14 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
GB2412232A (en) * 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
JP4652829B2 (ja) * 2005-01-26 2011-03-16 キヤノン株式会社 電子線露光装置およびデバイス製造方法
EP1746630B1 (en) 2005-07-20 2009-02-25 Carl Zeiss SMS GmbH Charged particle beam exposure system and beam manipulating arrangement
EP2002458B1 (en) * 2006-04-03 2009-11-04 IMS Nanofabrication AG Particle-beam exposure apparatus with overall-modulation of a patterned beam
SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638559B1 (en) * 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator

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JP2002203776A (ja) * 2000-12-28 2002-07-19 Advantest Corp 電子ビーム露光装置及び電子ビーム成形部材
JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
WO2009127658A1 (en) * 2008-04-15 2009-10-22 Mapper Lithography Ip B.V. Projection lens arrangement
WO2010109647A1 (ja) * 2009-03-27 2010-09-30 株式会社アドバンテスト マルチコラム電子線描画用マスク保持装置及びマルチコラム電子線描画装置

Also Published As

Publication number Publication date
EP2638560A1 (en) 2013-09-18
JP6133212B2 (ja) 2017-05-24
US20120292524A1 (en) 2012-11-22
EP2638560B1 (en) 2017-02-22
JP2013544030A (ja) 2013-12-09
TW201236045A (en) 2012-09-01
KR20130126936A (ko) 2013-11-21
TWI562183B (en) 2016-12-11
US8558196B2 (en) 2013-10-15
WO2012065941A1 (en) 2012-05-24

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