JP2013544031A5 - - Google Patents

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Publication number
JP2013544031A5
JP2013544031A5 JP2013538230A JP2013538230A JP2013544031A5 JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5 JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5
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JP
Japan
Prior art keywords
chamber
intermediate chamber
aperture array
aperture
array element
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Application number
JP2013538230A
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English (en)
Japanese (ja)
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JP2013544031A (ja
JP6049627B2 (ja
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Publication date
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Priority claimed from PCT/EP2011/070077 external-priority patent/WO2012062932A1/en
Publication of JP2013544031A publication Critical patent/JP2013544031A/ja
Publication of JP2013544031A5 publication Critical patent/JP2013544031A5/ja
Application granted granted Critical
Publication of JP6049627B2 publication Critical patent/JP6049627B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013538230A 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム Active JP6049627B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41523210P 2010-11-18 2010-11-18
US61/415,232 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
US201161443466P 2011-02-16 2011-02-16
US61/443,466 2011-02-16
US201161477688P 2011-04-21 2011-04-21
US61/477,688 2011-04-21
PCT/EP2011/070077 WO2012062932A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with intermediate chamber

Publications (3)

Publication Number Publication Date
JP2013544031A JP2013544031A (ja) 2013-12-09
JP2013544031A5 true JP2013544031A5 (enExample) 2015-01-15
JP6049627B2 JP6049627B2 (ja) 2016-12-21

Family

ID=45065872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538230A Active JP6049627B2 (ja) 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム

Country Status (4)

Country Link
US (2) US8586949B2 (enExample)
JP (1) JP6049627B2 (enExample)
TW (1) TWI517196B (enExample)
WO (1) WO2012062932A1 (enExample)

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US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
TWI562183B (en) * 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
JP2015509666A (ja) * 2012-03-08 2015-03-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
KR101945964B1 (ko) * 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
CN105874559B (zh) 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
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IT201600082446A1 (it) * 2016-08-04 2018-02-04 Consorzio Di Ricerca Hypatia Macchina per la stampa 3d a fascio di elettroni
JP6741879B2 (ja) * 2017-04-11 2020-08-19 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子源モジュール、荷電粒子源モジュールを備えた露光システム、荷電粒子源配置、半導体デバイスを製造する方法、及びターゲットを検査する方法
KR102596854B1 (ko) * 2017-08-08 2023-11-02 에이에스엠엘 네델란즈 비.브이. 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법
JP7073668B2 (ja) * 2017-10-25 2022-05-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
WO2023085133A1 (ja) * 2021-11-09 2023-05-19 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
JP7080533B1 (ja) 2021-11-09 2022-06-06 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法

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WO2010094724A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
WO2010094719A1 (en) * 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
TWI562183B (en) * 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
WO2012062934A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
EP2681624B1 (en) * 2010-12-14 2016-07-20 Mapper Lithography IP B.V. Lithography system and method of processing substrates in such a lithography system

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