JP2013544031A5 - - Google Patents

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Publication number
JP2013544031A5
JP2013544031A5 JP2013538230A JP2013538230A JP2013544031A5 JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5 JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5
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JP
Japan
Prior art keywords
chamber
intermediate chamber
aperture array
aperture
array element
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Application number
JP2013538230A
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English (en)
Japanese (ja)
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JP2013544031A (ja
JP6049627B2 (ja
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Priority claimed from PCT/EP2011/070077 external-priority patent/WO2012062932A1/en
Publication of JP2013544031A publication Critical patent/JP2013544031A/ja
Publication of JP2013544031A5 publication Critical patent/JP2013544031A5/ja
Application granted granted Critical
Publication of JP6049627B2 publication Critical patent/JP6049627B2/ja
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JP2013538230A 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム Active JP6049627B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41523210P 2010-11-18 2010-11-18
US61/415,232 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
US201161443466P 2011-02-16 2011-02-16
US61/443,466 2011-02-16
US201161477688P 2011-04-21 2011-04-21
US61/477,688 2011-04-21
PCT/EP2011/070077 WO2012062932A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with intermediate chamber

Publications (3)

Publication Number Publication Date
JP2013544031A JP2013544031A (ja) 2013-12-09
JP2013544031A5 true JP2013544031A5 (enExample) 2015-01-15
JP6049627B2 JP6049627B2 (ja) 2016-12-21

Family

ID=45065872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538230A Active JP6049627B2 (ja) 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム

Country Status (4)

Country Link
US (2) US8586949B2 (enExample)
JP (1) JP6049627B2 (enExample)
TW (1) TWI517196B (enExample)
WO (1) WO2012062932A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638560B1 (en) * 2010-11-13 2017-02-22 Mapper Lithography IP B.V. Charged particle lithography system with aperture array cooling
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
KR101902469B1 (ko) * 2012-03-08 2018-09-28 마퍼 리쏘그라피 아이피 비.브이. 정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템
US10586625B2 (en) * 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
KR101961914B1 (ko) 2012-05-14 2019-03-25 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 리소그래피 시스템 및 빔 생성기
NL2010799C2 (en) * 2012-05-14 2014-02-03 Mapper Lithography Ip Bv Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method.
CN105874560B (zh) * 2013-11-14 2018-07-20 迈普尔平版印刷Ip有限公司 电极堆栈布置
US9666404B2 (en) * 2015-02-18 2017-05-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiteprüftechnik mbH Charged particle source arrangement for a charged particle beam device, charged particle beam device for sample inspection, and method for providing a primary charged particle beam for sample inspection in a charged particle beam
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
IT201600082446A1 (it) 2016-08-04 2018-02-04 Consorzio Di Ricerca Hypatia Macchina per la stampa 3d a fascio di elettroni
TWI793114B (zh) 2017-04-11 2023-02-21 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子源模組及具有所述帶電粒子源模組之曝光系統
CN111108582B (zh) * 2017-08-08 2024-07-05 Asml荷兰有限公司 带电粒子阻挡元件、包括这样的元件的曝光装置以及使用这样的曝光装置的方法
JP7073668B2 (ja) * 2017-10-25 2022-05-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP7080533B1 (ja) 2021-11-09 2022-06-06 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
KR20240096776A (ko) * 2021-11-09 2024-06-26 가부시키가이샤 포토 일렉트론 소울 전자총, 전자선 적용 장치 및 멀티 전자빔의 형성 방법

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT393334B (de) * 1988-01-22 1991-09-25 Ims Ionen Mikrofab Syst Anordnung zur stabilisierung einer bestrahlten maske
JPH0777208B2 (ja) * 1992-05-12 1995-08-16 工業技術院長 微細パターン形成方法
JPH0669111A (ja) * 1992-08-20 1994-03-11 Hitachi Ltd 真空排気方法
JP3908294B2 (ja) * 1996-02-02 2007-04-25 富士通株式会社 電子ビームの電流量を削減する電子ビーム露光装置及び電子ビーム露光方法
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
AU2003274829A1 (en) 2002-10-25 2004-05-13 Mapper Lithography Ip B.V. Lithography system
EP2701178B1 (en) 2002-10-30 2020-02-12 ASML Netherlands B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
CN100543920C (zh) 2003-05-28 2009-09-23 迈普尔平版印刷Ip有限公司 带电粒子小射束曝光系统
JP2005203123A (ja) * 2004-01-13 2005-07-28 Sony Corp 荷電粒子ビーム装置。
JP4406311B2 (ja) * 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4262158B2 (ja) * 2004-07-13 2009-05-13 株式会社日立ハイテクサイエンスシステムズ 低真空走査電子顕微鏡
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
US20060181689A1 (en) 2005-02-14 2006-08-17 Nikon Corporation Lithographic-optical systems including isolatable vacuum chambers, and lithography apparatus comprising same
JP4977399B2 (ja) * 2005-11-10 2012-07-18 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2007165837A (ja) * 2005-11-17 2007-06-28 E-Beam Corp 基板処理装置及び基板処理方法
JP2007165232A (ja) * 2005-12-16 2007-06-28 Hitachi High-Technologies Corp 荷電粒子線装置
EP2002458B1 (en) * 2006-04-03 2009-11-04 IMS Nanofabrication AG Particle-beam exposure apparatus with overall-modulation of a patterned beam
EP1983548A1 (en) * 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
US8688254B2 (en) 2007-06-15 2014-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple tools using a single data processing unit
CN102414777B (zh) * 2009-02-22 2014-12-03 迈普尔平版印刷Ip有限公司 真空腔中产生真空的带电粒子光刻设备及方法
KR101545193B1 (ko) * 2009-02-22 2015-08-18 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법
JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638560B1 (en) * 2010-11-13 2017-02-22 Mapper Lithography IP B.V. Charged particle lithography system with aperture array cooling
EP2638559B1 (en) * 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
KR101907433B1 (ko) * 2010-12-14 2018-10-12 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템 및 이러한 리소그라피 시스템에서 기판을 프로세싱하는 방법

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