JP2013544031A5 - - Google Patents

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Publication number
JP2013544031A5
JP2013544031A5 JP2013538230A JP2013538230A JP2013544031A5 JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5 JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5
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JP
Japan
Prior art keywords
chamber
intermediate chamber
aperture array
aperture
array element
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Application number
JP2013538230A
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English (en)
Japanese (ja)
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JP2013544031A (ja
JP6049627B2 (ja
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Priority claimed from PCT/EP2011/070077 external-priority patent/WO2012062932A1/en
Publication of JP2013544031A publication Critical patent/JP2013544031A/ja
Publication of JP2013544031A5 publication Critical patent/JP2013544031A5/ja
Application granted granted Critical
Publication of JP6049627B2 publication Critical patent/JP6049627B2/ja
Active legal-status Critical Current
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JP2013538230A 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム Active JP6049627B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41523210P 2010-11-18 2010-11-18
US61/415,232 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
US201161443466P 2011-02-16 2011-02-16
US61/443,466 2011-02-16
US201161477688P 2011-04-21 2011-04-21
US61/477,688 2011-04-21
PCT/EP2011/070077 WO2012062932A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with intermediate chamber

Publications (3)

Publication Number Publication Date
JP2013544031A JP2013544031A (ja) 2013-12-09
JP2013544031A5 true JP2013544031A5 (enExample) 2015-01-15
JP6049627B2 JP6049627B2 (ja) 2016-12-21

Family

ID=45065872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538230A Active JP6049627B2 (ja) 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム

Country Status (4)

Country Link
US (2) US8586949B2 (enExample)
JP (1) JP6049627B2 (enExample)
TW (1) TWI517196B (enExample)
WO (1) WO2012062932A1 (enExample)

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Publication number Priority date Publication date Assignee Title
JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
JP6133212B2 (ja) * 2010-11-13 2017-05-24 マッパー・リソグラフィー・アイピー・ビー．ブイ． アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
USRE49732E1 (en) * 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
EP2850635B1 (en) * 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
NL2010797C2 (en) 2012-05-14 2014-08-21 Mapper Lithography Ip Bv Charged particle lithography system and beam generator.
US10586625B2 (en) * 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
WO2015071440A1 (en) 2013-11-14 2015-05-21 Mapper Lithography Ip B.V. Electrode cooling arrangement
US9666404B2 (en) * 2015-02-18 2017-05-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiteprüftechnik mbH Charged particle source arrangement for a charged particle beam device, charged particle beam device for sample inspection, and method for providing a primary charged particle beam for sample inspection in a charged particle beam
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
JP2017199610A (ja) * 2016-04-28 2017-11-02 株式会社ニューフレアテクノロジー ステージ機構
IT201600082446A1 (it) 2016-08-04 2018-02-04 Consorzio Di Ricerca Hypatia Macchina per la stampa 3d a fascio di elettroni
WO2018190436A1 (en) 2017-04-11 2018-10-18 Mapper Lithography Ip B.V. Charged particle source module
WO2019031093A1 (en) 2017-08-08 2019-02-14 Mapper Lithography Ip B.V. CHARGED PARTICLE BLOCKING ELEMENT, EXPOSURE APPARATUS COMPRISING SUCH AN ELEMENT, AND METHOD OF USING SUCH AN EXPOSURE APPARATUS
JP7073668B2 (ja) * 2017-10-25 2022-05-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP7080533B1 (ja) 2021-11-09 2022-06-06 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
WO2023085133A1 (ja) * 2021-11-09 2023-05-19 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法

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EP3671804A1 (en) 2002-10-30 2020-06-24 ASML Netherlands B.V. Electron beam exposure system
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JP2007165232A (ja) * 2005-12-16 2007-06-28 Hitachi High-Technologies Corp 荷電粒子線装置
EP2002458B1 (en) * 2006-04-03 2009-11-04 IMS Nanofabrication AG Particle-beam exposure apparatus with overall-modulation of a patterned beam
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JP5680557B2 (ja) 2009-02-22 2015-03-04 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィ装置
WO2010094724A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638559B1 (en) * 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP6133212B2 (ja) * 2010-11-13 2017-05-24 マッパー・リソグラフィー・アイピー・ビー．ブイ． アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム
US8895943B2 (en) * 2010-12-14 2014-11-25 Mapper Lithography Ip B.V. Lithography system and method of processing substrates in such a lithography system

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