JP6049627B2 - 中間チャンバを備えた荷電粒子リソグラフィシステム - Google Patents

中間チャンバを備えた荷電粒子リソグラフィシステム Download PDF

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Publication number
JP6049627B2
JP6049627B2 JP2013538230A JP2013538230A JP6049627B2 JP 6049627 B2 JP6049627 B2 JP 6049627B2 JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013538230 A JP2013538230 A JP 2013538230A JP 6049627 B2 JP6049627 B2 JP 6049627B2
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chamber
aperture
intermediate chamber
aperture array
pressure
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Japanese (ja)
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JP2013544031A (ja
JP2013544031A5 (enExample
Inventor
ディヌ−ゲルトレル、ローラ
アーバヌス、ウィレム・ヘンク
ビエランド、マルコ・ヤン−ヤコ
ステーンブリンク、スティーン・ウィレム・ヘルマン・カレル
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/301—Arrangements enabling beams to pass between regions of different pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2013538230A 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム Active JP6049627B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41523210P 2010-11-18 2010-11-18
US61/415,232 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
US201161443466P 2011-02-16 2011-02-16
US61/443,466 2011-02-16
US201161477688P 2011-04-21 2011-04-21
US61/477,688 2011-04-21
PCT/EP2011/070077 WO2012062932A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with intermediate chamber

Publications (3)

Publication Number Publication Date
JP2013544031A JP2013544031A (ja) 2013-12-09
JP2013544031A5 JP2013544031A5 (enExample) 2015-01-15
JP6049627B2 true JP6049627B2 (ja) 2016-12-21

Family

ID=45065872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538230A Active JP6049627B2 (ja) 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム

Country Status (4)

Country Link
US (2) US8586949B2 (enExample)
JP (1) JP6049627B2 (enExample)
TW (1) TWI517196B (enExample)
WO (1) WO2012062932A1 (enExample)

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JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638560B1 (en) * 2010-11-13 2017-02-22 Mapper Lithography IP B.V. Charged particle lithography system with aperture array cooling
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US10586625B2 (en) * 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
KR101961914B1 (ko) 2012-05-14 2019-03-25 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 리소그래피 시스템 및 빔 생성기
NL2010799C2 (en) * 2012-05-14 2014-02-03 Mapper Lithography Ip Bv Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method.
CN105874560B (zh) * 2013-11-14 2018-07-20 迈普尔平版印刷Ip有限公司 电极堆栈布置
US9666404B2 (en) * 2015-02-18 2017-05-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiteprüftechnik mbH Charged particle source arrangement for a charged particle beam device, charged particle beam device for sample inspection, and method for providing a primary charged particle beam for sample inspection in a charged particle beam
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
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IT201600082446A1 (it) 2016-08-04 2018-02-04 Consorzio Di Ricerca Hypatia Macchina per la stampa 3d a fascio di elettroni
TWI793114B (zh) 2017-04-11 2023-02-21 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子源模組及具有所述帶電粒子源模組之曝光系統
CN111108582B (zh) * 2017-08-08 2024-07-05 Asml荷兰有限公司 带电粒子阻挡元件、包括这样的元件的曝光装置以及使用这样的曝光装置的方法
JP7073668B2 (ja) * 2017-10-25 2022-05-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
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KR20240096776A (ko) * 2021-11-09 2024-06-26 가부시키가이샤 포토 일렉트론 소울 전자총, 전자선 적용 장치 및 멀티 전자빔의 형성 방법

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JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638560B1 (en) * 2010-11-13 2017-02-22 Mapper Lithography IP B.V. Charged particle lithography system with aperture array cooling
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Also Published As

Publication number Publication date
TW201239940A (en) 2012-10-01
US8586949B2 (en) 2013-11-19
TWI517196B (zh) 2016-01-11
US20120293780A1 (en) 2012-11-22
JP2013544031A (ja) 2013-12-09
WO2012062932A1 (en) 2012-05-18
US20140061497A1 (en) 2014-03-06
US8916837B2 (en) 2014-12-23

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