TWI517196B - 具有中間腔室的帶電粒子微影系統 - Google Patents
具有中間腔室的帶電粒子微影系統 Download PDFInfo
- Publication number
- TWI517196B TWI517196B TW100141410A TW100141410A TWI517196B TW I517196 B TWI517196 B TW I517196B TW 100141410 A TW100141410 A TW 100141410A TW 100141410 A TW100141410 A TW 100141410A TW I517196 B TWI517196 B TW I517196B
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- Taiwan
- Prior art keywords
- chamber
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- slot array
- intermediate chamber
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- Prior art date
Links
- 238000001459 lithography Methods 0.000 title claims description 49
- 239000002245 particle Substances 0.000 title claims description 46
- 238000001816 cooling Methods 0.000 claims description 21
- 238000005086 pumping Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 5
- 230000008033 biological extinction Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 29
- 229930195733 hydrocarbon Natural products 0.000 description 14
- 150000002430 hydrocarbons Chemical class 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000313 electron-beam-induced deposition Methods 0.000 description 11
- 239000000356 contaminant Substances 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 7
- 230000001143 conditioned effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000036961 partial effect Effects 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 230000001012 protector Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 241001595898 Monophlebidae Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002039 particle-beam lithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/301—Arrangements enabling beams to pass between regions of different pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/188—Differential pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41339610P | 2010-11-13 | 2010-11-13 | |
| US41523210P | 2010-11-18 | 2010-11-18 | |
| US42171710P | 2010-12-10 | 2010-12-10 | |
| US201161443466P | 2011-02-16 | 2011-02-16 | |
| US201161477688P | 2011-04-21 | 2011-04-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201239940A TW201239940A (en) | 2012-10-01 |
| TWI517196B true TWI517196B (zh) | 2016-01-11 |
Family
ID=45065872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141410A TWI517196B (zh) | 2010-11-13 | 2011-11-14 | 具有中間腔室的帶電粒子微影系統 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8586949B2 (enExample) |
| JP (1) | JP6049627B2 (enExample) |
| TW (1) | TWI517196B (enExample) |
| WO (1) | WO2012062932A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8586949B2 (en) * | 2010-11-13 | 2013-11-19 | Mapper Lithography Ip B.V. | Charged particle lithography system with intermediate chamber |
| TWI562183B (en) * | 2010-11-13 | 2016-12-11 | Mapper Lithography Ip Bv | Aperture array element, charged particle beam generator and charged particle lithography system |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| JP2015509666A (ja) * | 2012-03-08 | 2015-03-30 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム |
| US10586625B2 (en) | 2012-05-14 | 2020-03-10 | Asml Netherlands B.V. | Vacuum chamber arrangement for charged particle beam generator |
| US11348756B2 (en) | 2012-05-14 | 2022-05-31 | Asml Netherlands B.V. | Aberration correction in charged particle system |
| KR101945964B1 (ko) * | 2012-05-14 | 2019-02-11 | 마퍼 리쏘그라피 아이피 비.브이. | 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법 |
| CN104520968B (zh) | 2012-05-14 | 2017-07-07 | 迈普尔平版印刷Ip有限公司 | 带电粒子光刻系统和射束产生器 |
| CN105874559B (zh) | 2013-11-14 | 2018-11-23 | 迈普尔平版印刷Ip有限公司 | 多电极电子光学系统 |
| US9666404B2 (en) * | 2015-02-18 | 2017-05-30 | ICT Integrated Circuit Testing Gesellschaft für Halbleiteprüftechnik mbH | Charged particle source arrangement for a charged particle beam device, charged particle beam device for sample inspection, and method for providing a primary charged particle beam for sample inspection in a charged particle beam |
| US10312091B1 (en) * | 2015-10-13 | 2019-06-04 | Multibeam Corporation | Secure permanent integrated circuit personalization |
| JP2017199610A (ja) * | 2016-04-28 | 2017-11-02 | 株式会社ニューフレアテクノロジー | ステージ機構 |
| IT201600082446A1 (it) * | 2016-08-04 | 2018-02-04 | Consorzio Di Ricerca Hypatia | Macchina per la stampa 3d a fascio di elettroni |
| JP6741879B2 (ja) * | 2017-04-11 | 2020-08-19 | エーエスエムエル ネザーランズ ビー．ブイ． | 荷電粒子源モジュール、荷電粒子源モジュールを備えた露光システム、荷電粒子源配置、半導体デバイスを製造する方法、及びターゲットを検査する方法 |
| KR102596854B1 (ko) * | 2017-08-08 | 2023-11-02 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법 |
| JP7073668B2 (ja) * | 2017-10-25 | 2022-05-24 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置 |
| DE102019005362A1 (de) * | 2019-07-31 | 2021-02-04 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem |
| WO2023085133A1 (ja) * | 2021-11-09 | 2023-05-19 | 株式会社Photo electron Soul | 電子銃、電子線適用装置およびマルチ電子ビームの形成方法 |
| JP7080533B1 (ja) | 2021-11-09 | 2022-06-06 | 株式会社Photo electron Soul | 電子銃、電子線適用装置およびマルチ電子ビームの形成方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT393334B (de) | 1988-01-22 | 1991-09-25 | Ims Ionen Mikrofab Syst | Anordnung zur stabilisierung einer bestrahlten maske |
| JPH0777208B2 (ja) * | 1992-05-12 | 1995-08-16 | 工業技術院長 | 微細パターン形成方法 |
| JPH0669111A (ja) * | 1992-08-20 | 1994-03-11 | Hitachi Ltd | 真空排気方法 |
| JP3908294B2 (ja) * | 1996-02-02 | 2007-04-25 | 富士通株式会社 | 電子ビームの電流量を削減する電子ビーム露光装置及び電子ビーム露光方法 |
| JP4355446B2 (ja) * | 2000-12-28 | 2009-11-04 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子ビーム成形部材 |
| KR101060557B1 (ko) | 2002-10-25 | 2011-08-31 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그라피 시스템 |
| KR101077098B1 (ko) | 2002-10-30 | 2011-10-26 | 마퍼 리쏘그라피 아이피 비.브이. | 전자 빔 노출 시스템 |
| KR101068607B1 (ko) | 2003-03-10 | 2011-09-30 | 마퍼 리쏘그라피 아이피 비.브이. | 복수 개의 빔렛 발생 장치 |
| JP4949843B2 (ja) | 2003-05-28 | 2012-06-13 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 荷電粒子ビームレット露光システム |
| JP2005203123A (ja) * | 2004-01-13 | 2005-07-28 | Sony Corp | 荷電粒子ビーム装置。 |
| JP4406311B2 (ja) * | 2004-03-31 | 2010-01-27 | 株式会社荏原製作所 | エネルギー線照射装置およびそれを用いたパタン作成方法 |
| JP4262158B2 (ja) | 2004-07-13 | 2009-05-13 | 株式会社日立ハイテクサイエンスシステムズ | 低真空走査電子顕微鏡 |
| JP3929459B2 (ja) * | 2004-11-11 | 2007-06-13 | 株式会社日立ハイテクノロジーズ | 荷電粒子線露光装置 |
| US20060181689A1 (en) | 2005-02-14 | 2006-08-17 | Nikon Corporation | Lithographic-optical systems including isolatable vacuum chambers, and lithography apparatus comprising same |
| JP4977399B2 (ja) * | 2005-11-10 | 2012-07-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP2007165837A (ja) * | 2005-11-17 | 2007-06-28 | E-Beam Corp | 基板処理装置及び基板処理方法 |
| JP2007165232A (ja) * | 2005-12-16 | 2007-06-28 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| WO2007112465A1 (en) * | 2006-04-03 | 2007-10-11 | Ims Nanofabrication Ag | Particle-beam exposure apparatus with overall-modulation of a patterned beam |
| EP1983548A1 (en) | 2007-04-20 | 2008-10-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Emitter chamber, charged particle apparatus and method for operating same |
| US8688254B2 (en) | 2007-06-15 | 2014-04-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple tools using a single data processing unit |
| WO2010094724A1 (en) | 2009-02-22 | 2010-08-26 | Mapper Lithography Ip B.V. | Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber |
| WO2010094719A1 (en) * | 2009-02-22 | 2010-08-26 | Mapper Lithography Ip B.V. | Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber |
| US8586949B2 (en) * | 2010-11-13 | 2013-11-19 | Mapper Lithography Ip B.V. | Charged particle lithography system with intermediate chamber |
| TWI562183B (en) * | 2010-11-13 | 2016-12-11 | Mapper Lithography Ip Bv | Aperture array element, charged particle beam generator and charged particle lithography system |
| WO2012062854A1 (en) * | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Lithography system and method of refracting |
| WO2012062934A1 (en) * | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Charged particle beam modulator |
| EP2681624B1 (en) * | 2010-12-14 | 2016-07-20 | Mapper Lithography IP B.V. | Lithography system and method of processing substrates in such a lithography system |
-
2011
- 2011-11-14 US US13/295,249 patent/US8586949B2/en active Active
- 2011-11-14 TW TW100141410A patent/TWI517196B/zh active
- 2011-11-14 JP JP2013538230A patent/JP6049627B2/ja active Active
- 2011-11-14 WO PCT/EP2011/070077 patent/WO2012062932A1/en not_active Ceased
-
2013
- 2013-10-24 US US14/061,847 patent/US8916837B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8916837B2 (en) | 2014-12-23 |
| JP2013544031A (ja) | 2013-12-09 |
| JP6049627B2 (ja) | 2016-12-21 |
| US20140061497A1 (en) | 2014-03-06 |
| US20120293780A1 (en) | 2012-11-22 |
| TW201239940A (en) | 2012-10-01 |
| US8586949B2 (en) | 2013-11-19 |
| WO2012062932A1 (en) | 2012-05-18 |
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