JP2015521385A5 - - Google Patents

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Publication number
JP2015521385A5
JP2015521385A5 JP2015512034A JP2015512034A JP2015521385A5 JP 2015521385 A5 JP2015521385 A5 JP 2015521385A5 JP 2015512034 A JP2015512034 A JP 2015512034A JP 2015512034 A JP2015512034 A JP 2015512034A JP 2015521385 A5 JP2015521385 A5 JP 2015521385A5
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JP
Japan
Prior art keywords
plate
cooling
small beam
cooling channels
coolant
Prior art date
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Application number
JP2015512034A
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English (en)
Japanese (ja)
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JP5973061B2 (ja
JP2015521385A (ja
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Priority claimed from PCT/EP2013/059948 external-priority patent/WO2013171216A1/en
Publication of JP2015521385A publication Critical patent/JP2015521385A/ja
Publication of JP2015521385A5 publication Critical patent/JP2015521385A5/ja
Application granted granted Critical
Publication of JP5973061B2 publication Critical patent/JP5973061B2/ja
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JP2015512034A 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法 Active JP5973061B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646398P 2012-05-14 2012-05-14
US61/646,398 2012-05-14
PCT/EP2013/059948 WO2013171216A1 (en) 2012-05-14 2013-05-14 Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Publications (3)

Publication Number Publication Date
JP2015521385A JP2015521385A (ja) 2015-07-27
JP2015521385A5 true JP2015521385A5 (enExample) 2016-07-14
JP5973061B2 JP5973061B2 (ja) 2016-08-23

Family

ID=48444378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015512034A Active JP5973061B2 (ja) 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法

Country Status (6)

Country Link
EP (1) EP2850635B1 (enExample)
JP (1) JP5973061B2 (enExample)
KR (1) KR101945964B1 (enExample)
CN (1) CN104471669B (enExample)
NL (1) NL2010799C2 (enExample)
WO (1) WO2013171216A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101961914B1 (ko) 2012-05-14 2019-03-25 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 리소그래피 시스템 및 빔 생성기
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
WO2015032955A1 (en) * 2013-09-07 2015-03-12 Mapper Lithography Ip B.V. Target processing unit
CN105874560B (zh) * 2013-11-14 2018-07-20 迈普尔平版印刷Ip有限公司 电极堆栈布置
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
US9829804B1 (en) 2016-07-28 2017-11-28 Mapper Lithography Ip B.V. Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system
CN108121164B (zh) * 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法
KR102491478B1 (ko) * 2017-08-28 2023-01-26 에이에스엠엘 네델란즈 비.브이. 미리 결정된 시동 값을 갖는 메모리 디바이스
US12287151B2 (en) 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

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US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6046457A (en) * 1998-01-09 2000-04-04 International Business Machines Corporation Charged particle beam apparatus having anticontamination means
JP2000348662A (ja) * 1999-06-02 2000-12-15 Nikon Corp 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
US6563124B2 (en) 2001-03-21 2003-05-13 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
AU2003274829A1 (en) 2002-10-25 2004-05-13 Mapper Lithography Ip B.V. Lithography system
EP2701178B1 (en) 2002-10-30 2020-02-12 ASML Netherlands B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
CN100543920C (zh) 2003-05-28 2009-09-23 迈普尔平版印刷Ip有限公司 带电粒子小射束曝光系统
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
US7145641B2 (en) * 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP3929459B2 (ja) 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
TWI345685B (en) * 2005-09-06 2011-07-21 Asml Netherlands Bv Lithographic method
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JP6049627B2 (ja) * 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー.ブイ. 中間チャンバを備えた荷電粒子リソグラフィシステム
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NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
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