JP2015521385A5 - - Google Patents

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Publication number
JP2015521385A5
JP2015521385A5 JP2015512034A JP2015512034A JP2015521385A5 JP 2015521385 A5 JP2015521385 A5 JP 2015521385A5 JP 2015512034 A JP2015512034 A JP 2015512034A JP 2015512034 A JP2015512034 A JP 2015512034A JP 2015521385 A5 JP2015521385 A5 JP 2015521385A5
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JP
Japan
Prior art keywords
plate
cooling
small beam
cooling channels
coolant
Prior art date
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Application number
JP2015512034A
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English (en)
Japanese (ja)
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JP5973061B2 (ja
JP2015521385A (ja
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Priority claimed from PCT/EP2013/059948 external-priority patent/WO2013171216A1/en
Publication of JP2015521385A publication Critical patent/JP2015521385A/ja
Publication of JP2015521385A5 publication Critical patent/JP2015521385A5/ja
Application granted granted Critical
Publication of JP5973061B2 publication Critical patent/JP5973061B2/ja
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JP2015512034A 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法 Active JP5973061B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646398P 2012-05-14 2012-05-14
US61/646,398 2012-05-14
PCT/EP2013/059948 WO2013171216A1 (en) 2012-05-14 2013-05-14 Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Publications (3)

Publication Number Publication Date
JP2015521385A JP2015521385A (ja) 2015-07-27
JP2015521385A5 true JP2015521385A5 (enExample) 2016-07-14
JP5973061B2 JP5973061B2 (ja) 2016-08-23

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ID=48444378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015512034A Active JP5973061B2 (ja) 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法

Country Status (6)

Country Link
EP (1) EP2850635B1 (enExample)
JP (1) JP5973061B2 (enExample)
KR (1) KR101945964B1 (enExample)
CN (1) CN104471669B (enExample)
NL (1) NL2010799C2 (enExample)
WO (1) WO2013171216A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
CN105745577B (zh) * 2013-09-07 2018-01-23 迈普尔平版印刷Ip有限公司 目标处理单元
CN105874559B (zh) * 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
US9829804B1 (en) 2016-07-28 2017-11-28 Mapper Lithography Ip B.V. Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system
CN108121164B (zh) * 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法
TWI842676B (zh) * 2017-08-28 2024-05-21 荷蘭商Asml荷蘭公司 半導體記憶裝置及其製造方法
US12287151B2 (en) * 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

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US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
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US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6046457A (en) * 1998-01-09 2000-04-04 International Business Machines Corporation Charged particle beam apparatus having anticontamination means
JP2000348662A (ja) * 1999-06-02 2000-12-15 Nikon Corp 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
US6563124B2 (en) 2001-03-21 2003-05-13 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
KR101060557B1 (ko) 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
KR101077098B1 (ko) 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
JP4949843B2 (ja) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー.ブイ. 荷電粒子ビームレット露光システム
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
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JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
TWI345685B (en) * 2005-09-06 2011-07-21 Asml Netherlands Bv Lithographic method
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
TWI562183B (en) * 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
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NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
JP6352529B2 (ja) 2015-04-03 2018-07-04 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

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