KR101945964B1 - 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법 - Google Patents

하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법 Download PDF

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KR101945964B1
KR101945964B1 KR1020147035213A KR20147035213A KR101945964B1 KR 101945964 B1 KR101945964 B1 KR 101945964B1 KR 1020147035213 A KR1020147035213 A KR 1020147035213A KR 20147035213 A KR20147035213 A KR 20147035213A KR 101945964 B1 KR101945964 B1 KR 101945964B1
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South Korea
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cooling
plate
beamlet
shaped body
charged particle
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Korean (ko)
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KR20150010992A (ko
Inventor
요하네스 페트루스 스프렝거스
크리스티안 오텐
렘코 야거
스티즌 빌름 베르만 카렐 스틴브링크
요한 유스트 코닝
빌렘 헨크 어바너스
알렉산더 헨드릭 빈센트 반 빈
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마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020147035213A 2012-05-14 2013-05-14 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법 Active KR101945964B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646398P 2012-05-14 2012-05-14
US61/646,398 2012-05-14
PCT/EP2013/059948 WO2013171216A1 (en) 2012-05-14 2013-05-14 Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Publications (2)

Publication Number Publication Date
KR20150010992A KR20150010992A (ko) 2015-01-29
KR101945964B1 true KR101945964B1 (ko) 2019-02-11

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KR1020147035213A Active KR101945964B1 (ko) 2012-05-14 2013-05-14 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법

Country Status (6)

Country Link
EP (1) EP2850635B1 (enExample)
JP (1) JP5973061B2 (enExample)
KR (1) KR101945964B1 (enExample)
CN (1) CN104471669B (enExample)
NL (1) NL2010799C2 (enExample)
WO (1) WO2013171216A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12287151B2 (en) 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

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US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
CN105745577B (zh) * 2013-09-07 2018-01-23 迈普尔平版印刷Ip有限公司 目标处理单元
CN105874559B (zh) * 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
US9829804B1 (en) 2016-07-28 2017-11-28 Mapper Lithography Ip B.V. Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system
CN108121164B (zh) * 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法
TWI842676B (zh) * 2017-08-28 2024-05-21 荷蘭商Ａｓｍｌ荷蘭公司 半導體記憶裝置及其製造方法

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JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
US20120273690A1 (en) 2011-04-27 2012-11-01 Wieland Marco Jan Jaco Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams

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AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6046457A (en) * 1998-01-09 2000-04-04 International Business Machines Corporation Charged particle beam apparatus having anticontamination means
JP2000348662A (ja) * 1999-06-02 2000-12-15 Nikon Corp 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
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Publication number Priority date Publication date Assignee Title
US20020134912A1 (en) 2001-03-21 2002-09-26 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
US20120273690A1 (en) 2011-04-27 2012-11-01 Wieland Marco Jan Jaco Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12287151B2 (en) 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

Also Published As

Publication number Publication date
WO2013171216A4 (en) 2014-04-10
EP2850635B1 (en) 2016-04-27
CN104471669B (zh) 2017-02-22
JP5973061B2 (ja) 2016-08-23
WO2013171216A1 (en) 2013-11-21
CN104471669A (zh) 2015-03-25
NL2010799C2 (en) 2014-02-03
JP2015521385A (ja) 2015-07-27
WO2013171216A9 (en) 2014-02-20
EP2850635A1 (en) 2015-03-25
KR20150010992A (ko) 2015-01-29
NL2010799A (en) 2013-11-18

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