JP5973061B2 - 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法 - Google Patents

荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法 Download PDF

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JP5973061B2
JP5973061B2 JP2015512034A JP2015512034A JP5973061B2 JP 5973061 B2 JP5973061 B2 JP 5973061B2 JP 2015512034 A JP2015512034 A JP 2015512034A JP 2015512034 A JP2015512034 A JP 2015512034A JP 5973061 B2 JP5973061 B2 JP 5973061B2
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plate
cooling
small beam
cooling device
coolant
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Japanese (ja)
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JP2015521385A5 (enExample
JP2015521385A (ja
Inventor
スプレンガース、ヨハネス・ペトルス
オッテン、クリスティアン
イェガー、レムコ
ステーンブリンク、スティーン・ウィレム・ヘルマン・カレル
ケーニヒ、ヨハン・ヨースト
ウルバヌス、ウィレム・ヘンク
ファン・フェーン、アレクサンダー・ヘンドリク・ビンセント
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2015512034A 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法 Active JP5973061B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646398P 2012-05-14 2012-05-14
US61/646,398 2012-05-14
PCT/EP2013/059948 WO2013171216A1 (en) 2012-05-14 2013-05-14 Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Publications (3)

Publication Number Publication Date
JP2015521385A JP2015521385A (ja) 2015-07-27
JP2015521385A5 JP2015521385A5 (enExample) 2016-07-14
JP5973061B2 true JP5973061B2 (ja) 2016-08-23

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JP2015512034A Active JP5973061B2 (ja) 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法

Country Status (6)

Country Link
EP (1) EP2850635B1 (enExample)
JP (1) JP5973061B2 (enExample)
KR (1) KR101945964B1 (enExample)
CN (1) CN104471669B (enExample)
NL (1) NL2010799C2 (enExample)
WO (1) WO2013171216A1 (enExample)

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US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
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CN105745577B (zh) * 2013-09-07 2018-01-23 迈普尔平版印刷Ip有限公司 目标处理单元
CN105874559B (zh) * 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
US9829804B1 (en) 2016-07-28 2017-11-28 Mapper Lithography Ip B.V. Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system
CN108121164B (zh) * 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法
TWI842676B (zh) * 2017-08-28 2024-05-21 荷蘭商Ａｓｍｌ荷蘭公司 半導體記憶裝置及其製造方法
US12287151B2 (en) * 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

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NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
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Also Published As

Publication number Publication date
WO2013171216A4 (en) 2014-04-10
EP2850635B1 (en) 2016-04-27
CN104471669B (zh) 2017-02-22
WO2013171216A1 (en) 2013-11-21
KR101945964B1 (ko) 2019-02-11
CN104471669A (zh) 2015-03-25
NL2010799C2 (en) 2014-02-03
JP2015521385A (ja) 2015-07-27
WO2013171216A9 (en) 2014-02-20
EP2850635A1 (en) 2015-03-25
KR20150010992A (ko) 2015-01-29
NL2010799A (en) 2013-11-18

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