NL2010799C2 - Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method. - Google Patents
Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method. Download PDFInfo
- Publication number
- NL2010799C2 NL2010799C2 NL2010799A NL2010799A NL2010799C2 NL 2010799 C2 NL2010799 C2 NL 2010799C2 NL 2010799 A NL2010799 A NL 2010799A NL 2010799 A NL2010799 A NL 2010799A NL 2010799 C2 NL2010799 C2 NL 2010799C2
- Authority
- NL
- Netherlands
- Prior art keywords
- cooling
- plate
- beamlet
- cooling channels
- beamlets
- Prior art date
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 229
- 239000002245 particle Substances 0.000 title claims abstract description 45
- 238000001459 lithography Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000012809 cooling fluid Substances 0.000 claims description 60
- 238000009826 distribution Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 238000012546 transfer Methods 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 3
- 239000000110 cooling liquid Substances 0.000 abstract description 18
- 239000000463 material Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 239000002826 coolant Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 235000015250 liver sausages Nutrition 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
- H01J2237/0437—Semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
- H01J2237/31794—Problems associated with lithography affecting masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261646398P | 2012-05-14 | 2012-05-14 | |
| US201261646398 | 2012-05-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2010799A NL2010799A (en) | 2013-11-18 |
| NL2010799C2 true NL2010799C2 (en) | 2014-02-03 |
Family
ID=48444378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2010799A NL2010799C2 (en) | 2012-05-14 | 2013-05-14 | Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method. |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2850635B1 (enExample) |
| JP (1) | JP5973061B2 (enExample) |
| KR (1) | KR101945964B1 (enExample) |
| CN (1) | CN104471669B (enExample) |
| NL (1) | NL2010799C2 (enExample) |
| WO (1) | WO2013171216A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11348756B2 (en) | 2012-05-14 | 2022-05-31 | Asml Netherlands B.V. | Aberration correction in charged particle system |
| CN104520968B (zh) | 2012-05-14 | 2017-07-07 | 迈普尔平版印刷Ip有限公司 | 带电粒子光刻系统和射束产生器 |
| CN105745577B (zh) * | 2013-09-07 | 2018-01-23 | 迈普尔平版印刷Ip有限公司 | 目标处理单元 |
| CN105874559B (zh) * | 2013-11-14 | 2018-11-23 | 迈普尔平版印刷Ip有限公司 | 多电极电子光学系统 |
| US10486232B2 (en) | 2015-04-21 | 2019-11-26 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor manufacturing device with embedded fluid conduits |
| US9829804B1 (en) | 2016-07-28 | 2017-11-28 | Mapper Lithography Ip B.V. | Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system |
| CN108121164B (zh) * | 2016-11-29 | 2020-12-01 | 中芯国际集成电路制造(上海)有限公司 | 光罩散热装置及其工作方法 |
| TWI842676B (zh) * | 2017-08-28 | 2024-05-21 | 荷蘭商Ａｓｍｌ荷蘭公司 | 半導體記憶裝置及其製造方法 |
| US12287151B2 (en) * | 2021-02-26 | 2025-04-29 | Teradyne, Inc. | Thermal plate having a fluid channel |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3157308A (en) | 1961-09-05 | 1964-11-17 | Clark Mfg Co J L | Canister type container and method of making the same |
| US3159408A (en) | 1961-10-05 | 1964-12-01 | Grace W R & Co | Chuck |
| US4524308A (en) | 1984-06-01 | 1985-06-18 | Sony Corporation | Circuits for accomplishing electron beam convergence in color cathode ray tubes |
| AU6449994A (en) | 1993-04-30 | 1994-11-21 | Board Of Regents, The University Of Texas System | Megavoltage scanning imager and method for its use |
| EP0766405A1 (en) | 1995-09-29 | 1997-04-02 | STMicroelectronics S.r.l. | Successive approximation register without redundancy |
| US6046457A (en) * | 1998-01-09 | 2000-04-04 | International Business Machines Corporation | Charged particle beam apparatus having anticontamination means |
| JP2000348662A (ja) * | 1999-06-02 | 2000-12-15 | Nikon Corp | 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法 |
| JP4355446B2 (ja) * | 2000-12-28 | 2009-11-04 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子ビーム成形部材 |
| US6563124B2 (en) | 2001-03-21 | 2003-05-13 | Applied Materials, Inc. | Electron beam apparatus having traversing circuit boards |
| US6768125B2 (en) * | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
| KR101060557B1 (ko) | 2002-10-25 | 2011-08-31 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그라피 시스템 |
| KR101077098B1 (ko) | 2002-10-30 | 2011-10-26 | 마퍼 리쏘그라피 아이피 비.브이. | 전자 빔 노출 시스템 |
| KR101068607B1 (ko) | 2003-03-10 | 2011-09-30 | 마퍼 리쏘그라피 아이피 비.브이. | 복수 개의 빔렛 발생 장치 |
| JP4113032B2 (ja) * | 2003-04-21 | 2008-07-02 | キヤノン株式会社 | 電子銃及び電子ビーム露光装置 |
| JP4949843B2 (ja) | 2003-05-28 | 2012-06-13 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 荷電粒子ビームレット露光システム |
| WO2005010618A2 (en) | 2003-07-30 | 2005-02-03 | Mapper Lithography Ip B.V. | Modulator circuitry |
| US7145641B2 (en) * | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| JP3929459B2 (ja) * | 2004-11-11 | 2007-06-13 | 株式会社日立ハイテクノロジーズ | 荷電粒子線露光装置 |
| TWI345685B (en) * | 2005-09-06 | 2011-07-21 | Asml Netherlands Bv | Lithographic method |
| US7709815B2 (en) | 2005-09-16 | 2010-05-04 | Mapper Lithography Ip B.V. | Lithography system and projection method |
| TWI562183B (en) * | 2010-11-13 | 2016-12-11 | Mapper Lithography Ip Bv | Aperture array element, charged particle beam generator and charged particle lithography system |
| US8586949B2 (en) * | 2010-11-13 | 2013-11-19 | Mapper Lithography Ip B.V. | Charged particle lithography system with intermediate chamber |
| JP5253532B2 (ja) * | 2011-03-01 | 2013-07-31 | キヤノン株式会社 | 偏向器アレイ、偏向器アレイの製造方法、描画装置、および物品の製造方法 |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| JP6352529B2 (ja) | 2015-04-03 | 2018-07-04 | 株式会社日立ハイテクノロジーズ | 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置 |
-
2013
- 2013-05-14 KR KR1020147035213A patent/KR101945964B1/ko active Active
- 2013-05-14 JP JP2015512034A patent/JP5973061B2/ja active Active
- 2013-05-14 CN CN201380037560.8A patent/CN104471669B/zh active Active
- 2013-05-14 WO PCT/EP2013/059948 patent/WO2013171216A1/en not_active Ceased
- 2013-05-14 EP EP13722748.4A patent/EP2850635B1/en active Active
- 2013-05-14 NL NL2010799A patent/NL2010799C2/en active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013171216A4 (en) | 2014-04-10 |
| EP2850635B1 (en) | 2016-04-27 |
| CN104471669B (zh) | 2017-02-22 |
| JP5973061B2 (ja) | 2016-08-23 |
| WO2013171216A1 (en) | 2013-11-21 |
| KR101945964B1 (ko) | 2019-02-11 |
| CN104471669A (zh) | 2015-03-25 |
| JP2015521385A (ja) | 2015-07-27 |
| WO2013171216A9 (en) | 2014-02-20 |
| EP2850635A1 (en) | 2015-03-25 |
| KR20150010992A (ko) | 2015-01-29 |
| NL2010799A (en) | 2013-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL2010799C2 (en) | Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method. | |
| JP6133212B2 (ja) | アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム | |
| KR102023056B1 (ko) | 하전 입자 리소그래피 시스템 및 빔 생성기 | |
| CN102687232A (zh) | 调节装置及使用其的带电粒子多射束光刻系统 | |
| JP7446374B2 (ja) | ラジカルを輸送するための装置および方法 | |
| US11348756B2 (en) | Aberration correction in charged particle system | |
| JP2025533444A (ja) | 電子光学モジュール |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RC | Pledge established |
Free format text: DETAILS LICENCE OR PLEDGE: RIGHT OF PLEDGE, ESTABLISHED Name of requester: DE STAAT DER NEDERLANDEN / RIJKSDIENST VOOR ONDERN Effective date: 20180621 |
|
| PD | Change of ownership |
Owner name: ASML NETHERLANDS B.V.; NL Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: MAPPER LITHOGRAPHY IP B.V. Effective date: 20190425 |