JP2005328047A5 - - Google Patents

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Publication number
JP2005328047A5
JP2005328047A5 JP2005134248A JP2005134248A JP2005328047A5 JP 2005328047 A5 JP2005328047 A5 JP 2005328047A5 JP 2005134248 A JP2005134248 A JP 2005134248A JP 2005134248 A JP2005134248 A JP 2005134248A JP 2005328047 A5 JP2005328047 A5 JP 2005328047A5
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JP
Japan
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charged particle
exposure apparatus
particle beam
beam exposure
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JP2005134248A
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English (en)
Japanese (ja)
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JP2005328047A (ja
JP4843248B2 (ja
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Publication of JP2005328047A5 publication Critical patent/JP2005328047A5/ja
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Publication of JP4843248B2 publication Critical patent/JP4843248B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2005134248A 2004-04-30 2005-05-02 粒子ビーム露光の改善されたパターン規定装置 Expired - Fee Related JP4843248B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATA755/2004 2004-04-30
AT7552004 2004-04-30

Publications (3)

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JP2005328047A JP2005328047A (ja) 2005-11-24
JP2005328047A5 true JP2005328047A5 (enExample) 2008-05-29
JP4843248B2 JP4843248B2 (ja) 2011-12-21

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JP2005134248A Expired - Fee Related JP4843248B2 (ja) 2004-04-30 2005-05-02 粒子ビーム露光の改善されたパターン規定装置

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US (1) US7368738B2 (enExample)
JP (1) JP4843248B2 (enExample)
GB (1) GB2413694A (enExample)

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JP6190254B2 (ja) * 2013-12-04 2017-08-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns
EP2937889B1 (en) 2014-04-25 2017-02-15 IMS Nanofabrication AG Multi-beam tool for cutting patterns
EP2950325B1 (en) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
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US10290528B2 (en) 2014-06-13 2019-05-14 Intel Corporation Ebeam align on the fly
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KR102395478B1 (ko) * 2014-06-13 2022-05-09 인텔 코포레이션 Ｅ 빔을 이용한 층 상의 단방향 금속
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
JP6537593B2 (ja) * 2014-08-19 2019-07-03 インテル・コーポレーション 電子ビームユニバーサルカッタを用いるクロススキャン近接効果補正
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9761411B2 (en) * 2015-01-20 2017-09-12 Taiwain Semiconductor Manufacturing Company, Ltd. System and method for maskless direct write lithography
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US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
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US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
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KR102835338B1 (ko) 2019-05-03 2025-07-17 아이엠에스 나노패브릭케이션 게엠베하 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) * 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12500060B2 (en) 2021-07-14 2025-12-16 Ims Nanofabrication Gmbh Electromagnetic lens
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure
JP2023138912A (ja) 2022-03-21 2023-10-03 アイエムエス ナノファブリケーション ゲーエムベーハー リソグラフィ描画法における熱膨張の補正
JP2023166336A (ja) 2022-05-09 2023-11-21 アイエムエス ナノファブリケーション ゲーエムベーハー シャント装置を有する調節可能永久磁石レンズ
JP2024012118A (ja) 2022-07-15 2024-01-25 アイエムエス ナノファブリケーション ゲーエムベーハー 温度制御要素を有する調節可能永久磁石レンズ
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