JP2006186125A5 - - Google Patents

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Publication number
JP2006186125A5
JP2006186125A5 JP2004378665A JP2004378665A JP2006186125A5 JP 2006186125 A5 JP2006186125 A5 JP 2006186125A5 JP 2004378665 A JP2004378665 A JP 2004378665A JP 2004378665 A JP2004378665 A JP 2004378665A JP 2006186125 A5 JP2006186125 A5 JP 2006186125A5
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JP
Japan
Prior art keywords
charged particle
particle beam
aperture array
exposure apparatus
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004378665A
Other languages
English (en)
Japanese (ja)
Other versions
JP4612838B2 (ja
JP2006186125A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004378665A priority Critical patent/JP4612838B2/ja
Priority claimed from JP2004378665A external-priority patent/JP4612838B2/ja
Priority to US11/315,303 priority patent/US7388214B2/en
Publication of JP2006186125A publication Critical patent/JP2006186125A/ja
Publication of JP2006186125A5 publication Critical patent/JP2006186125A5/ja
Application granted granted Critical
Publication of JP4612838B2 publication Critical patent/JP4612838B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004378665A 2004-12-28 2004-12-28 荷電粒子線露光装置およびその露光方法 Expired - Fee Related JP4612838B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004378665A JP4612838B2 (ja) 2004-12-28 2004-12-28 荷電粒子線露光装置およびその露光方法
US11/315,303 US7388214B2 (en) 2004-12-28 2005-12-23 Charged-particle beam exposure apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004378665A JP4612838B2 (ja) 2004-12-28 2004-12-28 荷電粒子線露光装置およびその露光方法

Publications (3)

Publication Number Publication Date
JP2006186125A JP2006186125A (ja) 2006-07-13
JP2006186125A5 true JP2006186125A5 (enExample) 2008-02-28
JP4612838B2 JP4612838B2 (ja) 2011-01-12

Family

ID=36610326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004378665A Expired - Fee Related JP4612838B2 (ja) 2004-12-28 2004-12-28 荷電粒子線露光装置およびその露光方法

Country Status (2)

Country Link
US (1) US7388214B2 (enExample)
JP (1) JP4612838B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066359A (ja) * 2006-09-05 2008-03-21 Canon Inc 荷電ビームレンズアレイ、露光装置及びデバイス製造方法
US8481962B2 (en) 2010-08-10 2013-07-09 Fei Company Distributed potential charged particle detector
JP5576332B2 (ja) * 2011-04-06 2014-08-20 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
TWI571707B (zh) 2011-04-22 2017-02-21 瑪波微影Ip公司 用於處理諸如晶圓的標靶的微影系統,用於操作用於處理諸如晶圓的標靶的微影系統的方法,以及使用在此種微影系統的基板
NL2008679C2 (en) 2011-04-22 2013-06-26 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark.
US9383662B2 (en) 2011-05-13 2016-07-05 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
JP5956797B2 (ja) 2012-03-22 2016-07-27 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP5977550B2 (ja) 2012-03-22 2016-08-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
WO2014156170A1 (ja) * 2013-03-29 2014-10-02 国立大学法人東北大学 電子ビーム照射装置
JP2014229841A (ja) * 2013-05-24 2014-12-08 キヤノン株式会社 描画装置及び物品の製造方法
JP2018078250A (ja) 2016-11-11 2018-05-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
IL277822B2 (en) 2018-05-01 2024-08-01 Asml Netherlands Bv Multi-beam test rig
JP7030210B2 (ja) * 2018-11-13 2022-03-04 株式会社日立ハイテク 荷電粒子線装置および試料観察方法
EP3716313A1 (en) * 2019-03-28 2020-09-30 ASML Netherlands B.V. Aperture array with integrated current measurement
CN113892163B (zh) 2019-05-28 2025-04-08 Asml荷兰有限公司 具有低串扰的多带电粒子射束设备
DE102021118561B4 (de) 2021-07-19 2023-03-30 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskopes mit schneller Strahlstromregelung, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591415Y2 (ja) * 1992-01-10 1999-03-03 日新電機株式会社 ビーム電流測定装置
JP2001006589A (ja) * 1999-06-24 2001-01-12 Nikon Corp 電子銃、電子線露光装置及び半導体装置の製造方法
JP3471774B2 (ja) 2001-08-06 2003-12-02 株式会社日立製作所 電子線描画装置およびその方法
JP4167050B2 (ja) * 2002-12-13 2008-10-15 キヤノン株式会社 荷電粒子線露光装置及びその制御方法、並びにデバイス製造方法
JP2004288577A (ja) * 2003-03-25 2004-10-14 Nikon Corp 電子銃、電子銃の制御方法及び電子線露光装置

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