JP2006019439A5 - - Google Patents

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Publication number
JP2006019439A5
JP2006019439A5 JP2004194775A JP2004194775A JP2006019439A5 JP 2006019439 A5 JP2006019439 A5 JP 2006019439A5 JP 2004194775 A JP2004194775 A JP 2004194775A JP 2004194775 A JP2004194775 A JP 2004194775A JP 2006019439 A5 JP2006019439 A5 JP 2006019439A5
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JP
Japan
Prior art keywords
charged particle
particle beam
blanking
substrate
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004194775A
Other languages
English (en)
Japanese (ja)
Other versions
JP4477436B2 (ja
JP2006019439A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004194775A priority Critical patent/JP4477436B2/ja
Priority claimed from JP2004194775A external-priority patent/JP4477436B2/ja
Priority to US11/159,356 priority patent/US7173262B2/en
Publication of JP2006019439A publication Critical patent/JP2006019439A/ja
Publication of JP2006019439A5 publication Critical patent/JP2006019439A5/ja
Application granted granted Critical
Publication of JP4477436B2 publication Critical patent/JP4477436B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004194775A 2004-06-30 2004-06-30 荷電粒子線露光装置 Expired - Fee Related JP4477436B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004194775A JP4477436B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置
US11/159,356 US7173262B2 (en) 2004-06-30 2005-06-23 Charged particle beam exposure apparatus, charged particle beam exposure method and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194775A JP4477436B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置

Publications (3)

Publication Number Publication Date
JP2006019439A JP2006019439A (ja) 2006-01-19
JP2006019439A5 true JP2006019439A5 (enExample) 2007-08-16
JP4477436B2 JP4477436B2 (ja) 2010-06-09

Family

ID=35656178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004194775A Expired - Fee Related JP4477436B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置

Country Status (2)

Country Link
US (1) US7173262B2 (enExample)
JP (1) JP4477436B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4559137B2 (ja) * 2004-06-30 2010-10-06 キヤノン株式会社 真空機器の製造装置及び製造方法
JP4477436B2 (ja) * 2004-06-30 2010-06-09 キヤノン株式会社 荷電粒子線露光装置
US7770180B2 (en) * 2004-12-21 2010-08-03 Microsoft Corporation Exposing embedded data in a computer-generated document
JP4657740B2 (ja) * 2005-01-26 2011-03-23 キヤノン株式会社 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5199921B2 (ja) * 2009-03-06 2013-05-15 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビームの光軸ずれ補正方法
EP3692562A1 (en) * 2017-10-02 2020-08-12 ASML Netherlands B.V. An apparatus using charged particle beams
KR20240007062A (ko) * 2022-07-07 2024-01-16 가부시키가이샤 뉴플레어 테크놀로지 실장 기판, 블랭킹 애퍼처 어레이 칩, 블랭킹 애퍼처 어레이 시스템 및 멀티 하전 입자 빔 조사 장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262341A (en) * 1989-05-19 1993-11-16 Fujitsu Limited Blanking aperture array and charged particle beam exposure method
US5144142A (en) * 1989-05-19 1992-09-01 Fujitsu Limited Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method
US5260579A (en) * 1991-03-13 1993-11-09 Fujitsu Limited Charged particle beam exposure system and charged particle beam exposure method
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
JP3299632B2 (ja) * 1994-06-24 2002-07-08 株式会社日立製作所 電子線描画装置
JPH09330868A (ja) 1996-06-12 1997-12-22 Canon Inc 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP3647136B2 (ja) 1996-04-23 2005-05-11 キヤノン株式会社 電子ビーム露光装置
JP3647143B2 (ja) 1996-06-12 2005-05-11 キヤノン株式会社 電子ビーム露光装置及びその露光方法
JP3647128B2 (ja) 1996-03-04 2005-05-11 キヤノン株式会社 電子ビーム露光装置とその露光方法
JPH09240143A (ja) 1996-03-04 1997-09-16 Mitsubishi Paper Mills Ltd 発色型可逆感熱記録材料及びその製造方法
EP1369895B1 (en) * 1996-03-04 2012-05-09 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
US6818911B2 (en) * 2002-04-10 2004-11-16 Canon Kabushiki Kaisha Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
JP4167904B2 (ja) * 2003-01-06 2008-10-22 株式会社日立ハイテクノロジーズ 電子ビーム描画装置及び電子ビーム描画方法
JP4421836B2 (ja) * 2003-03-28 2010-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
JP4313145B2 (ja) * 2003-10-07 2009-08-12 株式会社日立ハイテクノロジーズ 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP4477436B2 (ja) * 2004-06-30 2010-06-09 キヤノン株式会社 荷電粒子線露光装置
JP4907092B2 (ja) * 2005-03-01 2012-03-28 株式会社日立ハイテクノロジーズ 電子ビーム描画装置および電子ビーム描画方法

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