JP2007500948A5 - - Google Patents

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Publication number
JP2007500948A5
JP2007500948A5 JP2006532135A JP2006532135A JP2007500948A5 JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5 JP 2006532135 A JP2006532135 A JP 2006532135A JP 2006532135 A JP2006532135 A JP 2006532135A JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5
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JP
Japan
Prior art keywords
charged particle
beamlet
lens
array
diaphragm
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JP2006532135A
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English (en)
Japanese (ja)
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JP2007500948A (ja
JP4949843B2 (ja
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Priority claimed from PCT/NL2004/000381 external-priority patent/WO2004107050A2/en
Publication of JP2007500948A publication Critical patent/JP2007500948A/ja
Publication of JP2007500948A5 publication Critical patent/JP2007500948A5/ja
Application granted granted Critical
Publication of JP4949843B2 publication Critical patent/JP4949843B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006532135A 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム Expired - Fee Related JP4949843B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US60/473,810 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Publications (3)

Publication Number Publication Date
JP2007500948A JP2007500948A (ja) 2007-01-18
JP2007500948A5 true JP2007500948A5 (enExample) 2007-07-12
JP4949843B2 JP4949843B2 (ja) 2012-06-13

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ID=33490650

Family Applications (1)

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JP2006532135A Expired - Fee Related JP4949843B2 (ja) 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム

Country Status (8)

Country Link
US (1) US7084414B2 (enExample)
EP (2) EP1830384B1 (enExample)
JP (1) JP4949843B2 (enExample)
KR (2) KR101175523B1 (enExample)
CN (1) CN100543920C (enExample)
AT (2) ATE524822T1 (enExample)
DE (1) DE602004005704T2 (enExample)
WO (1) WO2004107050A2 (enExample)

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US8952342B2 (en) 2009-12-17 2015-02-10 Mapper Lithography Ip B.V. Support and positioning structure, semiconductor equipment system and method for positioning
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JP6049627B2 (ja) 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
EP2638559B1 (en) 2010-11-13 2016-07-20 Mapper Lithography IP B.V. Charged particle beam modulator
JP6133212B2 (ja) 2010-11-13 2017-05-24 マッパー・リソグラフィー・アイピー・ビー．ブイ． アパーチャアレイ冷却部を備えた荷電粒子リソグラフィシステム
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8895943B2 (en) 2010-12-14 2014-11-25 Mapper Lithography Ip B.V. Lithography system and method of processing substrates in such a lithography system
JP5902201B2 (ja) 2011-02-16 2016-04-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 磁気シールド用システム
WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
JP6189303B2 (ja) * 2011-09-12 2017-08-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板処理装置
WO2013045636A2 (en) 2011-09-28 2013-04-04 Mapper Lithography Ip B.V. Plasma generator
USRE49732E1 (en) * 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
CN104321701B (zh) 2012-03-20 2017-04-12 迈普尔平版印刷Ip有限公司 用于运输自由基的装置和方法
EP2850635B1 (en) 2012-05-14 2016-04-27 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
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NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
NL2010760C2 (en) 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
EP2816585A1 (en) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam system and method of operating thereof
US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
WO2015071440A1 (en) 2013-11-14 2015-05-21 Mapper Lithography Ip B.V. Electrode cooling arrangement
NL2014029B1 (en) 2013-12-30 2016-01-08 Mapper Lithography Ip Bv Cathode arrangement, electron gun, and lithography system comprising such electron gun.
JP2017513036A (ja) 2014-11-14 2017-05-25 マッパー・リソグラフィー・アイピー・ビー．ブイ． 貨物固定システムおよびリソグラフィシステム内で基板を移送するための方法
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
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CN112567493B (zh) 2018-08-09 2024-12-31 Asml荷兰有限公司 用于多个带电粒子束的装置
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