JP2007500948A5 - - Google Patents

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Publication number
JP2007500948A5
JP2007500948A5 JP2006532135A JP2006532135A JP2007500948A5 JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5 JP 2006532135 A JP2006532135 A JP 2006532135A JP 2006532135 A JP2006532135 A JP 2006532135A JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5
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JP
Japan
Prior art keywords
charged particle
beamlet
lens
array
diaphragm
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JP2006532135A
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English (en)
Japanese (ja)
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JP2007500948A (ja
JP4949843B2 (ja
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Priority claimed from PCT/NL2004/000381 external-priority patent/WO2004107050A2/en
Publication of JP2007500948A publication Critical patent/JP2007500948A/ja
Publication of JP2007500948A5 publication Critical patent/JP2007500948A5/ja
Application granted granted Critical
Publication of JP4949843B2 publication Critical patent/JP4949843B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006532135A 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム Expired - Fee Related JP4949843B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US60/473,810 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Publications (3)

Publication Number Publication Date
JP2007500948A JP2007500948A (ja) 2007-01-18
JP2007500948A5 true JP2007500948A5 (enExample) 2007-07-12
JP4949843B2 JP4949843B2 (ja) 2012-06-13

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Family Applications (1)

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JP2006532135A Expired - Fee Related JP4949843B2 (ja) 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム

Country Status (8)

Country Link
US (1) US7084414B2 (enExample)
EP (2) EP1830384B1 (enExample)
JP (1) JP4949843B2 (enExample)
KR (2) KR101175523B1 (enExample)
CN (1) CN100543920C (enExample)
AT (2) ATE524822T1 (enExample)
DE (1) DE602004005704T2 (enExample)
WO (1) WO2004107050A2 (enExample)

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US8952342B2 (en) 2009-12-17 2015-02-10 Mapper Lithography Ip B.V. Support and positioning structure, semiconductor equipment system and method for positioning
KR101725299B1 (ko) 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
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WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
JP6189303B2 (ja) 2011-09-12 2017-08-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板処理装置
US9224580B2 (en) 2011-09-28 2015-12-29 Mapper Litohgraphy Ip B.V. Plasma generator
JP2015509666A (ja) * 2012-03-08 2015-03-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム
CN106933063B (zh) 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
KR101945964B1 (ko) 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
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US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
CN105874559B (zh) 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
US9466453B2 (en) 2013-12-30 2016-10-11 Mapper Lithography Ip B.V. Cathode arrangement, electron gun, and lithography system comprising such electron gun
CN107111251B (zh) 2014-11-14 2020-10-20 Asml荷兰有限公司 用于在光刻系统中转移基材的加载锁定系统和方法
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
US11164716B2 (en) * 2018-03-29 2021-11-02 Hitachi High-Tech Corporation Charged particle beam device
JP2021532545A (ja) * 2018-08-09 2021-11-25 エーエスエムエル ネザーランズ ビー．ブイ． 複数の荷電粒子ビームのための装置
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