JP2007500948A5 - - Google Patents

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Publication number
JP2007500948A5
JP2007500948A5 JP2006532135A JP2006532135A JP2007500948A5 JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5 JP 2006532135 A JP2006532135 A JP 2006532135A JP 2006532135 A JP2006532135 A JP 2006532135A JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5
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JP
Japan
Prior art keywords
charged particle
beamlet
lens
array
diaphragm
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Application number
JP2006532135A
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English (en)
Japanese (ja)
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JP2007500948A (ja
JP4949843B2 (ja
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Priority claimed from PCT/NL2004/000381 external-priority patent/WO2004107050A2/en
Publication of JP2007500948A publication Critical patent/JP2007500948A/ja
Publication of JP2007500948A5 publication Critical patent/JP2007500948A5/ja
Application granted granted Critical
Publication of JP4949843B2 publication Critical patent/JP4949843B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006532135A 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム Expired - Fee Related JP4949843B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US60/473,810 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Publications (3)

Publication Number Publication Date
JP2007500948A JP2007500948A (ja) 2007-01-18
JP2007500948A5 true JP2007500948A5 (enExample) 2007-07-12
JP4949843B2 JP4949843B2 (ja) 2012-06-13

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ID=33490650

Family Applications (1)

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JP2006532135A Expired - Fee Related JP4949843B2 (ja) 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム

Country Status (8)

Country Link
US (1) US7084414B2 (enExample)
EP (2) EP1627412B1 (enExample)
JP (1) JP4949843B2 (enExample)
KR (2) KR101175523B1 (enExample)
CN (1) CN100543920C (enExample)
AT (2) ATE358885T1 (enExample)
DE (1) DE602004005704T2 (enExample)
WO (1) WO2004107050A2 (enExample)

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JP6049627B2 (ja) 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
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KR101907433B1 (ko) 2010-12-14 2018-10-12 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템 및 이러한 리소그라피 시스템에서 기판을 프로세싱하는 방법
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CN105974743B (zh) 2011-04-22 2019-04-23 迈普尔平版印刷Ip有限公司 用于光刻机器群集的网络架构和协议
TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
WO2013037856A1 (en) * 2011-09-12 2013-03-21 Mapper Lithography Ip B.V. Substrate processing apparatus
WO2013045636A2 (en) 2011-09-28 2013-04-04 Mapper Lithography Ip B.V. Plasma generator
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RU2017146228A (ru) 2012-03-20 2019-02-20 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Агрегат и способ переноса радикалов
JP5973061B2 (ja) 2012-05-14 2016-08-23 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法
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KR102023056B1 (ko) 2012-05-14 2019-09-20 에이에스엠엘 네델란즈 비.브이. 하전 입자 리소그래피 시스템 및 빔 생성기
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010760C2 (en) 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
EP2816585A1 (en) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam system and method of operating thereof
WO2015024956A1 (en) 2013-08-23 2015-02-26 Mapper Lithography Ip B.V. Drying device for use in a lithography system
NL2013814B1 (en) 2013-11-14 2016-05-10 Mapper Lithography Ip Bv Multi-electrode vacuum arrangement.
WO2015101537A1 (en) 2013-12-30 2015-07-09 Mapper Lithography Ip B.V. Cathode arrangement, electron gun, and lithography system comprising such electron gun
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US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
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