CN100543920C - 带电粒子小射束曝光系统 - Google Patents

带电粒子小射束曝光系统 Download PDF

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Publication number
CN100543920C
CN100543920C CNB2004800145787A CN200480014578A CN100543920C CN 100543920 C CN100543920 C CN 100543920C CN B2004800145787 A CNB2004800145787 A CN B2004800145787A CN 200480014578 A CN200480014578 A CN 200480014578A CN 100543920 C CN100543920 C CN 100543920C
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CN
China
Prior art keywords
aperture
charged particle
lens
array
beamlets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2004800145787A
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English (en)
Chinese (zh)
Other versions
CN1795529A (zh
Inventor
彼得·克勒伊特
马尔科·扬-哈科·威兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
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Mapper Lithopraphy IP BV
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Publication date
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Publication of CN1795529A publication Critical patent/CN1795529A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB2004800145787A 2003-05-28 2004-05-27 带电粒子小射束曝光系统 Expired - Lifetime CN100543920C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US60/473,810 2003-05-28

Publications (2)

Publication Number Publication Date
CN1795529A CN1795529A (zh) 2006-06-28
CN100543920C true CN100543920C (zh) 2009-09-23

Family

ID=33490650

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800145787A Expired - Lifetime CN100543920C (zh) 2003-05-28 2004-05-27 带电粒子小射束曝光系统

Country Status (8)

Country Link
US (1) US7084414B2 (enExample)
EP (2) EP1830384B1 (enExample)
JP (1) JP4949843B2 (enExample)
KR (2) KR101175523B1 (enExample)
CN (1) CN100543920C (enExample)
AT (2) ATE524822T1 (enExample)
DE (1) DE602004005704T2 (enExample)
WO (1) WO2004107050A2 (enExample)

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US7928404B2 (en) * 2003-10-07 2011-04-19 Multibeam Corporation Variable-ratio double-deflection beam blanker
US7462848B2 (en) * 2003-10-07 2008-12-09 Multibeam Systems, Inc. Optics for generation of high current density patterned charged particle beams
ATE441202T1 (de) * 2004-05-17 2009-09-15 Mapper Lithography Ip Bv Belichtungssystem mit einem geladenen teilchenstrahl
EP1842103A2 (en) * 2005-01-14 2007-10-10 Arradiance, Inc. Synchronous raster scanning lithographic system
NL1029132C2 (nl) * 2005-05-26 2006-11-28 Univ Delft Tech Inrichting voor het opwekken van evenwijdige stralenbundeldelen.
US8597089B2 (en) * 2005-07-08 2013-12-03 Praxair Technology, Inc. System and method for treating live cargo such as poultry with gas
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
JP2009531855A (ja) * 2006-03-27 2009-09-03 マルチビーム システムズ インコーポレイテッド 高電流密度パターン化荷電粒子ビーム生成のための光学系
WO2007112465A1 (en) * 2006-04-03 2007-10-11 Ims Nanofabrication Ag Particle-beam exposure apparatus with overall-modulation of a patterned beam
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US7569834B1 (en) 2006-10-18 2009-08-04 Kla-Tencor Technologies Corporation High resolution charged particle projection lens array using magnetic elements
EP2019415B1 (en) 2007-07-24 2016-05-11 IMS Nanofabrication AG Multi-beam source
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
EP2279515B1 (en) 2008-04-15 2011-11-30 Mapper Lithography IP B.V. Projection lens arrangement
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
WO2009141428A1 (en) * 2008-05-23 2009-11-26 Mapper Lithography Ip B.V. Imaging system
EP2128885A1 (en) * 2008-05-26 2009-12-02 FEI Company Charged particle source with integrated energy filter
WO2010094724A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
CN102414775A (zh) 2009-02-22 2012-04-11 迈普尔平版印刷Ip有限公司 用于在真空腔中实现真空的方法和配置
CN102414776A (zh) 2009-02-22 2012-04-11 迈普尔平版印刷Ip有限公司 微影机及基板处理的配置
WO2010094719A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
EP2433294B1 (en) * 2009-05-20 2016-07-27 Mapper Lithography IP B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
CN104810232B (zh) 2009-05-20 2017-12-29 迈普尔平版印刷Ip有限公司 两次扫描
CN102460633B (zh) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
CN102668015B (zh) 2009-10-26 2015-06-17 迈普尔平版印刷Ip有限公司 带电粒子多子射束光刻系统、调节装置及其制造方法
US8952342B2 (en) 2009-12-17 2015-02-10 Mapper Lithography Ip B.V. Support and positioning structure, semiconductor equipment system and method for positioning
KR101725299B1 (ko) 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
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EP2681624B1 (en) 2010-12-14 2016-07-20 Mapper Lithography IP B.V. Lithography system and method of processing substrates in such a lithography system
EP2676168B1 (en) 2011-02-16 2018-09-12 Mapper Lithography IP B.V. System for magnetic shielding
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US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
JP6189303B2 (ja) 2011-09-12 2017-08-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板処理装置
US9224580B2 (en) 2011-09-28 2015-12-29 Mapper Litohgraphy Ip B.V. Plasma generator
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CN106933063B (zh) 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
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Also Published As

Publication number Publication date
JP2007500948A (ja) 2007-01-18
WO2004107050A2 (en) 2004-12-09
US7084414B2 (en) 2006-08-01
KR20060036391A (ko) 2006-04-28
KR101175523B1 (ko) 2012-08-21
US20050161621A1 (en) 2005-07-28
CN1795529A (zh) 2006-06-28
KR20120025629A (ko) 2012-03-15
EP1830384A3 (en) 2007-09-19
EP1627412A2 (en) 2006-02-22
EP1830384A2 (en) 2007-09-05
JP4949843B2 (ja) 2012-06-13
WO2004107050A3 (en) 2005-04-21
ATE358885T1 (de) 2007-04-15
EP1830384B1 (en) 2011-09-14
KR101168200B1 (ko) 2012-07-25
DE602004005704T2 (de) 2007-12-27
ATE524822T1 (de) 2011-09-15
DE602004005704D1 (de) 2007-05-16
EP1627412B1 (en) 2007-04-04

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Effective date of registration: 20190531

Address after: Holland Weide Eindhoven

Patentee after: ASML Holding N.V

Address before: Delft

Patentee before: MAPPER LITHOGRAPHY IP B.V.

CX01 Expiry of patent term
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Granted publication date: 20090923