KR101175523B1 - 대전 입자 빔렛 노광 시스템 - Google Patents

대전 입자 빔렛 노광 시스템 Download PDF

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Publication number
KR101175523B1
KR101175523B1 KR1020127003554A KR20127003554A KR101175523B1 KR 101175523 B1 KR101175523 B1 KR 101175523B1 KR 1020127003554 A KR1020127003554 A KR 1020127003554A KR 20127003554 A KR20127003554 A KR 20127003554A KR 101175523 B1 KR101175523 B1 KR 101175523B1
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KR
South Korea
Prior art keywords
charged particle
beamlet
opening
lens
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020127003554A
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English (en)
Korean (ko)
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KR20120025629A (ko
Inventor
피터 크루이트
마르코 잔-자코 빌란트
Original Assignee
마퍼 리쏘그라피 아이피 비.브이.
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Publication of KR20120025629A publication Critical patent/KR20120025629A/ko
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Publication of KR101175523B1 publication Critical patent/KR101175523B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020127003554A 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템 Expired - Lifetime KR101175523B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US60/473,810 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020057022719A Division KR101168200B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템

Publications (2)

Publication Number Publication Date
KR20120025629A KR20120025629A (ko) 2012-03-15
KR101175523B1 true KR101175523B1 (ko) 2012-08-21

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127003554A Expired - Lifetime KR101175523B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템
KR1020057022719A Expired - Lifetime KR101168200B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020057022719A Expired - Lifetime KR101168200B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템

Country Status (8)

Country Link
US (1) US7084414B2 (enExample)
EP (2) EP1627412B1 (enExample)
JP (1) JP4949843B2 (enExample)
KR (2) KR101175523B1 (enExample)
CN (1) CN100543920C (enExample)
AT (2) ATE358885T1 (enExample)
DE (1) DE602004005704T2 (enExample)
WO (1) WO2004107050A2 (enExample)

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CN101443877A (zh) * 2006-03-27 2009-05-27 多束系统公司 用于生成高电流密度构图带电粒子束的光学器件
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US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
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US8502176B2 (en) * 2008-05-23 2013-08-06 Mapper Lithography Ip B.V. Imaging system
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Also Published As

Publication number Publication date
WO2004107050A2 (en) 2004-12-09
EP1830384B1 (en) 2011-09-14
DE602004005704D1 (de) 2007-05-16
WO2004107050A3 (en) 2005-04-21
US7084414B2 (en) 2006-08-01
KR20060036391A (ko) 2006-04-28
US20050161621A1 (en) 2005-07-28
JP2007500948A (ja) 2007-01-18
CN100543920C (zh) 2009-09-23
JP4949843B2 (ja) 2012-06-13
DE602004005704T2 (de) 2007-12-27
EP1627412B1 (en) 2007-04-04
KR20120025629A (ko) 2012-03-15
KR101168200B1 (ko) 2012-07-25
EP1830384A3 (en) 2007-09-19
EP1830384A2 (en) 2007-09-05
ATE358885T1 (de) 2007-04-15
ATE524822T1 (de) 2011-09-15
EP1627412A2 (en) 2006-02-22
CN1795529A (zh) 2006-06-28

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