DE602004005704T2 - Belichtungssystem unter Verwendung von Beamlets geladener Teilchen - Google Patents

Belichtungssystem unter Verwendung von Beamlets geladener Teilchen Download PDF

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Publication number
DE602004005704T2
DE602004005704T2 DE602004005704T DE602004005704T DE602004005704T2 DE 602004005704 T2 DE602004005704 T2 DE 602004005704T2 DE 602004005704 T DE602004005704 T DE 602004005704T DE 602004005704 T DE602004005704 T DE 602004005704T DE 602004005704 T2 DE602004005704 T2 DE 602004005704T2
Authority
DE
Germany
Prior art keywords
aperture
charged particles
lens
group
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004005704T
Other languages
German (de)
English (en)
Other versions
DE602004005704D1 (de
Inventor
Pieter Kruit
Marco Jan-Jaco Wieland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of DE602004005704D1 publication Critical patent/DE602004005704D1/de
Application granted granted Critical
Publication of DE602004005704T2 publication Critical patent/DE602004005704T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE602004005704T 2003-05-28 2004-05-27 Belichtungssystem unter Verwendung von Beamlets geladener Teilchen Expired - Lifetime DE602004005704T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US473810P 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Publications (2)

Publication Number Publication Date
DE602004005704D1 DE602004005704D1 (de) 2007-05-16
DE602004005704T2 true DE602004005704T2 (de) 2007-12-27

Family

ID=33490650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004005704T Expired - Lifetime DE602004005704T2 (de) 2003-05-28 2004-05-27 Belichtungssystem unter Verwendung von Beamlets geladener Teilchen

Country Status (8)

Country Link
US (1) US7084414B2 (enExample)
EP (2) EP1627412B1 (enExample)
JP (1) JP4949843B2 (enExample)
KR (2) KR101175523B1 (enExample)
CN (1) CN100543920C (enExample)
AT (2) ATE358885T1 (enExample)
DE (1) DE602004005704T2 (enExample)
WO (1) WO2004107050A2 (enExample)

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US7781748B2 (en) * 2006-04-03 2010-08-24 Ims Nanofabrication Ag Particle-beam exposure apparatus with overall-modulation of a patterned beam
US8134135B2 (en) 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US7569834B1 (en) 2006-10-18 2009-08-04 Kla-Tencor Technologies Corporation High resolution charged particle projection lens array using magnetic elements
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US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
WO2009127659A2 (en) 2008-04-15 2009-10-22 Mapper Lithography Ip B.V. Beamlet blanker arrangement
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
US8502176B2 (en) * 2008-05-23 2013-08-06 Mapper Lithography Ip B.V. Imaging system
EP2128885A1 (en) * 2008-05-26 2009-12-02 FEI Company Charged particle source with integrated energy filter
KR101687955B1 (ko) 2009-02-22 2016-12-20 마퍼 리쏘그라피 아이피 비.브이. 하전입자 리소그래피 장치 및 진공 챔버에 진공을 발생시키는 방법
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EP2433294B1 (en) * 2009-05-20 2016-07-27 Mapper Lithography IP B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
EP3144955A1 (en) 2009-05-20 2017-03-22 Mapper Lithography IP B.V. Method for exposing a wafer
WO2010134018A2 (en) 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Pattern data conversion for lithography system
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US8921758B2 (en) 2010-10-26 2014-12-30 Mapper Lithography Ip B.V. Modulation device and charged particle multi-beamlet lithography system using the same
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
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JP6158091B2 (ja) 2010-12-14 2017-07-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィシステム及びこのようなリソグラフィシステムで基板を処理する方法
JP5902201B2 (ja) 2011-02-16 2016-04-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 磁気シールド用システム
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US20140252953A1 (en) 2011-09-28 2014-09-11 Mapper Lithography Ip B.V. Plasma generator
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RU2642494C2 (ru) 2012-03-20 2018-01-25 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Агрегат и способ переноса радикалов
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Also Published As

Publication number Publication date
WO2004107050A2 (en) 2004-12-09
EP1830384B1 (en) 2011-09-14
DE602004005704D1 (de) 2007-05-16
KR101175523B1 (ko) 2012-08-21
WO2004107050A3 (en) 2005-04-21
US7084414B2 (en) 2006-08-01
KR20060036391A (ko) 2006-04-28
US20050161621A1 (en) 2005-07-28
JP2007500948A (ja) 2007-01-18
CN100543920C (zh) 2009-09-23
JP4949843B2 (ja) 2012-06-13
EP1627412B1 (en) 2007-04-04
KR20120025629A (ko) 2012-03-15
KR101168200B1 (ko) 2012-07-25
EP1830384A3 (en) 2007-09-19
EP1830384A2 (en) 2007-09-05
ATE358885T1 (de) 2007-04-15
ATE524822T1 (de) 2011-09-15
EP1627412A2 (en) 2006-02-22
CN1795529A (zh) 2006-06-28

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