ATE524822T1 - Belichtungsverfahren für strahlen aus geladenen teilchen - Google Patents

Belichtungsverfahren für strahlen aus geladenen teilchen

Info

Publication number
ATE524822T1
ATE524822T1 AT07075242T AT07075242T ATE524822T1 AT E524822 T1 ATE524822 T1 AT E524822T1 AT 07075242 T AT07075242 T AT 07075242T AT 07075242 T AT07075242 T AT 07075242T AT E524822 T1 ATE524822 T1 AT E524822T1
Authority
AT
Austria
Prior art keywords
charged particle
aperture
beamlet
deflector
lens
Prior art date
Application number
AT07075242T
Other languages
German (de)
English (en)
Inventor
Marco Jan-Jaco Wieland
Pieter Kruit
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE524822T1 publication Critical patent/ATE524822T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT07075242T 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen ATE524822T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28

Publications (1)

Publication Number Publication Date
ATE524822T1 true ATE524822T1 (de) 2011-09-15

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07075242T ATE524822T1 (de) 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Country Status (8)

Country Link
US (1) US7084414B2 (enExample)
EP (2) EP1830384B1 (enExample)
JP (1) JP4949843B2 (enExample)
KR (2) KR101175523B1 (enExample)
CN (1) CN100543920C (enExample)
AT (2) ATE524822T1 (enExample)
DE (1) DE602004005704T2 (enExample)
WO (1) WO2004107050A2 (enExample)

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ATE441202T1 (de) * 2004-05-17 2009-09-15 Mapper Lithography Ip Bv Belichtungssystem mit einem geladenen teilchenstrahl
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JP2009531855A (ja) * 2006-03-27 2009-09-03 マルチビーム システムズ インコーポレイテッド 高電流密度パターン化荷電粒子ビーム生成のための光学系
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US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US7569834B1 (en) 2006-10-18 2009-08-04 Kla-Tencor Technologies Corporation High resolution charged particle projection lens array using magnetic elements
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US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
EP2279515B1 (en) 2008-04-15 2011-11-30 Mapper Lithography IP B.V. Projection lens arrangement
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CN102414776A (zh) 2009-02-22 2012-04-11 迈普尔平版印刷Ip有限公司 微影机及基板处理的配置
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CN104810232B (zh) 2009-05-20 2017-12-29 迈普尔平版印刷Ip有限公司 两次扫描
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KR101725299B1 (ko) 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
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US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
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TWI562183B (en) 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system
EP2681624B1 (en) 2010-12-14 2016-07-20 Mapper Lithography IP B.V. Lithography system and method of processing substrates in such a lithography system
EP2676168B1 (en) 2011-02-16 2018-09-12 Mapper Lithography IP B.V. System for magnetic shielding
WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
JP6189303B2 (ja) 2011-09-12 2017-08-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板処理装置
US9224580B2 (en) 2011-09-28 2015-12-29 Mapper Litohgraphy Ip B.V. Plasma generator
JP2015509666A (ja) * 2012-03-08 2015-03-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム
CN106933063B (zh) 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
KR101945964B1 (ko) 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
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US9922801B2 (en) 2013-08-23 2018-03-20 Mapper Lithography Ip B.V. Drying apparatus for use in a lithography system
CN105874559B (zh) 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
US9466453B2 (en) 2013-12-30 2016-10-11 Mapper Lithography Ip B.V. Cathode arrangement, electron gun, and lithography system comprising such electron gun
CN107111251B (zh) 2014-11-14 2020-10-20 Asml荷兰有限公司 用于在光刻系统中转移基材的加载锁定系统和方法
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
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Also Published As

Publication number Publication date
JP2007500948A (ja) 2007-01-18
WO2004107050A2 (en) 2004-12-09
US7084414B2 (en) 2006-08-01
KR20060036391A (ko) 2006-04-28
KR101175523B1 (ko) 2012-08-21
US20050161621A1 (en) 2005-07-28
CN1795529A (zh) 2006-06-28
KR20120025629A (ko) 2012-03-15
EP1830384A3 (en) 2007-09-19
EP1627412A2 (en) 2006-02-22
EP1830384A2 (en) 2007-09-05
JP4949843B2 (ja) 2012-06-13
WO2004107050A3 (en) 2005-04-21
ATE358885T1 (de) 2007-04-15
CN100543920C (zh) 2009-09-23
EP1830384B1 (en) 2011-09-14
KR101168200B1 (ko) 2012-07-25
DE602004005704T2 (de) 2007-12-27
DE602004005704D1 (de) 2007-05-16
EP1627412B1 (en) 2007-04-04

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