JP4477436B2 - 荷電粒子線露光装置 - Google Patents

荷電粒子線露光装置 Download PDF

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Publication number
JP4477436B2
JP4477436B2 JP2004194775A JP2004194775A JP4477436B2 JP 4477436 B2 JP4477436 B2 JP 4477436B2 JP 2004194775 A JP2004194775 A JP 2004194775A JP 2004194775 A JP2004194775 A JP 2004194775A JP 4477436 B2 JP4477436 B2 JP 4477436B2
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JP
Japan
Prior art keywords
blanking
charged particle
electron beam
particle beam
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004194775A
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English (en)
Japanese (ja)
Other versions
JP2006019439A (ja
JP2006019439A5 (enExample
Inventor
真希 細田
真人 村木
理 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Canon Inc filed Critical Hitachi High Technologies Corp
Priority to JP2004194775A priority Critical patent/JP4477436B2/ja
Priority to US11/159,356 priority patent/US7173262B2/en
Publication of JP2006019439A publication Critical patent/JP2006019439A/ja
Publication of JP2006019439A5 publication Critical patent/JP2006019439A5/ja
Application granted granted Critical
Publication of JP4477436B2 publication Critical patent/JP4477436B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2004194775A 2004-06-30 2004-06-30 荷電粒子線露光装置 Expired - Fee Related JP4477436B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004194775A JP4477436B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置
US11/159,356 US7173262B2 (en) 2004-06-30 2005-06-23 Charged particle beam exposure apparatus, charged particle beam exposure method and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194775A JP4477436B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置

Publications (3)

Publication Number Publication Date
JP2006019439A JP2006019439A (ja) 2006-01-19
JP2006019439A5 JP2006019439A5 (enExample) 2007-08-16
JP4477436B2 true JP4477436B2 (ja) 2010-06-09

Family

ID=35656178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004194775A Expired - Fee Related JP4477436B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置

Country Status (2)

Country Link
US (1) US7173262B2 (enExample)
JP (1) JP4477436B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4477436B2 (ja) * 2004-06-30 2010-06-09 キヤノン株式会社 荷電粒子線露光装置
JP4559137B2 (ja) * 2004-06-30 2010-10-06 キヤノン株式会社 真空機器の製造装置及び製造方法
US7770180B2 (en) * 2004-12-21 2010-08-03 Microsoft Corporation Exposing embedded data in a computer-generated document
JP4657740B2 (ja) * 2005-01-26 2011-03-23 キヤノン株式会社 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP2008004596A (ja) * 2006-06-20 2008-01-10 Canon Inc 荷電粒子線描画方法、露光装置、及びデバイス製造方法
JP5199921B2 (ja) * 2009-03-06 2013-05-15 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビームの光軸ずれ補正方法
KR102460680B1 (ko) * 2017-10-02 2022-10-28 에이에스엠엘 네델란즈 비.브이. 하전 입자 빔들을 사용하는 장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144142A (en) * 1989-05-19 1992-09-01 Fujitsu Limited Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method
US5262341A (en) * 1989-05-19 1993-11-16 Fujitsu Limited Blanking aperture array and charged particle beam exposure method
US5260579A (en) * 1991-03-13 1993-11-09 Fujitsu Limited Charged particle beam exposure system and charged particle beam exposure method
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
JP3299632B2 (ja) * 1994-06-24 2002-07-08 株式会社日立製作所 電子線描画装置
JP3647136B2 (ja) 1996-04-23 2005-05-11 キヤノン株式会社 電子ビーム露光装置
JPH09240143A (ja) 1996-03-04 1997-09-16 Mitsubishi Paper Mills Ltd 発色型可逆感熱記録材料及びその製造方法
JPH09330868A (ja) 1996-06-12 1997-12-22 Canon Inc 電子ビーム露光方法及びそれを用いたデバイス製造方法
DE69738276T2 (de) 1996-03-04 2008-04-03 Canon K.K. Elektronenstrahl-Belichtungsgerät, Belichtungsverfahren und Verfahren zur Erzeugung eines Objekts
JP3647143B2 (ja) 1996-06-12 2005-05-11 キヤノン株式会社 電子ビーム露光装置及びその露光方法
JP3647128B2 (ja) 1996-03-04 2005-05-11 キヤノン株式会社 電子ビーム露光装置とその露光方法
JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
US6818911B2 (en) * 2002-04-10 2004-11-16 Canon Kabushiki Kaisha Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
JP4167904B2 (ja) * 2003-01-06 2008-10-22 株式会社日立ハイテクノロジーズ 電子ビーム描画装置及び電子ビーム描画方法
JP4421836B2 (ja) * 2003-03-28 2010-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
JP4313145B2 (ja) * 2003-10-07 2009-08-12 株式会社日立ハイテクノロジーズ 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP4477436B2 (ja) * 2004-06-30 2010-06-09 キヤノン株式会社 荷電粒子線露光装置
JP4907092B2 (ja) * 2005-03-01 2012-03-28 株式会社日立ハイテクノロジーズ 電子ビーム描画装置および電子ビーム描画方法

Also Published As

Publication number Publication date
US20060017019A1 (en) 2006-01-26
JP2006019439A (ja) 2006-01-19
US7173262B2 (en) 2007-02-06

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