JP2019149370A5 - - Google Patents
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- Publication number
- JP2019149370A5 JP2019149370A5 JP2019013721A JP2019013721A JP2019149370A5 JP 2019149370 A5 JP2019149370 A5 JP 2019149370A5 JP 2019013721 A JP2019013721 A JP 2019013721A JP 2019013721 A JP2019013721 A JP 2019013721A JP 2019149370 A5 JP2019149370 A5 JP 2019149370A5
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- electrode
- particle source
- emitter
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims description 89
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000005421 electrostatic potential Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP18154140 | 2018-01-30 | ||
| EP18154140.0 | 2018-01-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019149370A JP2019149370A (ja) | 2019-09-05 |
| JP2019149370A5 true JP2019149370A5 (enExample) | 2022-01-11 |
| JP7183056B2 JP7183056B2 (ja) | 2022-12-05 |
Family
ID=61094315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019013721A Active JP7183056B2 (ja) | 2018-01-30 | 2019-01-30 | 荷電粒子ソース及びバックスパッタリングを利用した荷電粒子ソースのクリーニング方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3518268B1 (enExample) |
| JP (1) | JP7183056B2 (enExample) |
| KR (1) | KR102652202B1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
| EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
| US11830699B2 (en) * | 2021-07-06 | 2023-11-28 | Kla Corporation | Cold-field-emitter electron gun with self-cleaning extractor using reversed e-beam current |
| US12154756B2 (en) | 2021-08-12 | 2024-11-26 | Ims Nanofabrication Gmbh | Beam pattern device having beam absorber structure |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943351B2 (en) * | 2000-02-19 | 2005-09-13 | Multibeam Systems, Inc. | Multi-column charged particle optics assembly |
| US6768125B2 (en) | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
| JP2007172862A (ja) * | 2005-12-19 | 2007-07-05 | Hitachi High-Technologies Corp | 荷電粒子線源用清浄化装置及びそれを用いた荷電粒子線装置 |
| ATE527678T1 (de) | 2008-11-17 | 2011-10-15 | Ims Nanofabrication Ag | Verfahren zur maskenlosen teilchenstrahlbelichtung |
| EP2312609B1 (en) * | 2009-10-13 | 2013-08-28 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Method and apparatus of pretreatment of an electron gun chamber |
| JP2011199279A (ja) | 2010-03-18 | 2011-10-06 | Ims Nanofabrication Ag | ターゲット上へのマルチビーム露光のための方法 |
| US8736170B1 (en) * | 2011-02-22 | 2014-05-27 | Fei Company | Stable cold field emission electron source |
| EP2779204A1 (en) * | 2013-03-15 | 2014-09-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Electron gun arrangement |
| EP2830083B1 (en) | 2013-07-25 | 2016-05-04 | IMS Nanofabrication AG | Method for charged-particle multi-beam exposure |
| US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
| EP3096342B1 (en) | 2015-03-18 | 2017-09-20 | IMS Nanofabrication AG | Bi-directional double-pass multi-beam writing |
| JP6439620B2 (ja) * | 2015-07-28 | 2018-12-19 | 株式会社ニューフレアテクノロジー | 電子源のクリーニング方法及び電子ビーム描画装置 |
-
2019
- 2019-01-29 EP EP19154110.1A patent/EP3518268B1/en active Active
- 2019-01-30 KR KR1020190011633A patent/KR102652202B1/ko active Active
- 2019-01-30 JP JP2019013721A patent/JP7183056B2/ja active Active
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