JP7183056B2 - 荷電粒子ソース及びバックスパッタリングを利用した荷電粒子ソースのクリーニング方法 - Google Patents

荷電粒子ソース及びバックスパッタリングを利用した荷電粒子ソースのクリーニング方法 Download PDF

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JP7183056B2
JP7183056B2 JP2019013721A JP2019013721A JP7183056B2 JP 7183056 B2 JP7183056 B2 JP 7183056B2 JP 2019013721 A JP2019013721 A JP 2019013721A JP 2019013721 A JP2019013721 A JP 2019013721A JP 7183056 B2 JP7183056 B2 JP 7183056B2
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electrode
charged particle
particle source
emitter
source
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JP2019149370A (ja
JP2019149370A5 (enExample
Inventor
プラッツグマー エルマー
カプリオッティ マッティア
シュペングラー クリストフ
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IMS Nanofabrication GmbH
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IMS Nanofabrication GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H01J2237/06316—Schottky emission

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2019013721A 2018-01-30 2019-01-30 荷電粒子ソース及びバックスパッタリングを利用した荷電粒子ソースのクリーニング方法 Active JP7183056B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18154140 2018-01-30
EP18154140.0 2018-01-30

Publications (3)

Publication Number Publication Date
JP2019149370A JP2019149370A (ja) 2019-09-05
JP2019149370A5 JP2019149370A5 (enExample) 2022-01-11
JP7183056B2 true JP7183056B2 (ja) 2022-12-05

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JP2019013721A Active JP7183056B2 (ja) 2018-01-30 2019-01-30 荷電粒子ソース及びバックスパッタリングを利用した荷電粒子ソースのクリーニング方法

Country Status (3)

Country Link
EP (1) EP3518268B1 (enExample)
JP (1) JP7183056B2 (enExample)
KR (1) KR102652202B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US11830699B2 (en) * 2021-07-06 2023-11-28 Kla Corporation Cold-field-emitter electron gun with self-cleaning extractor using reversed e-beam current
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050001178A1 (en) 2000-02-19 2005-01-06 Parker N. William Multi-column charged particle optics assembly
JP2007172862A (ja) 2005-12-19 2007-07-05 Hitachi High-Technologies Corp 荷電粒子線源用清浄化装置及びそれを用いた荷電粒子線装置
US20110084219A1 (en) 2009-10-13 2011-04-14 Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh Method and apparatus of pretreatment of an electron gun chamber
JP2012174691A (ja) 2011-02-22 2012-09-10 Fei Co 安定な冷陰極電界放出型電子源
JP2014183046A (ja) 2013-03-15 2014-09-29 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh 電子銃装置
JP2017027917A (ja) 2015-07-28 2017-02-02 株式会社ニューフレアテクノロジー 電子源のクリーニング方法及び電子ビーム描画装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
ATE527678T1 (de) 2008-11-17 2011-10-15 Ims Nanofabrication Ag Verfahren zur maskenlosen teilchenstrahlbelichtung
JP2011199279A (ja) 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050001178A1 (en) 2000-02-19 2005-01-06 Parker N. William Multi-column charged particle optics assembly
JP2007172862A (ja) 2005-12-19 2007-07-05 Hitachi High-Technologies Corp 荷電粒子線源用清浄化装置及びそれを用いた荷電粒子線装置
US20110084219A1 (en) 2009-10-13 2011-04-14 Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh Method and apparatus of pretreatment of an electron gun chamber
JP2012174691A (ja) 2011-02-22 2012-09-10 Fei Co 安定な冷陰極電界放出型電子源
JP2014183046A (ja) 2013-03-15 2014-09-29 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh 電子銃装置
JP2017027917A (ja) 2015-07-28 2017-02-02 株式会社ニューフレアテクノロジー 電子源のクリーニング方法及び電子ビーム描画装置

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Publication number Publication date
JP2019149370A (ja) 2019-09-05
KR102652202B1 (ko) 2024-03-28
KR20190092308A (ko) 2019-08-07
EP3518268B1 (en) 2024-09-25
EP3518268A1 (en) 2019-07-31

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