JP2011514633A5 - - Google Patents

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Publication number
JP2011514633A5
JP2011514633A5 JP2010548047A JP2010548047A JP2011514633A5 JP 2011514633 A5 JP2011514633 A5 JP 2011514633A5 JP 2010548047 A JP2010548047 A JP 2010548047A JP 2010548047 A JP2010548047 A JP 2010548047A JP 2011514633 A5 JP2011514633 A5 JP 2011514633A5
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JP
Japan
Prior art keywords
plate
projection lens
array
apertures
downstream
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JP2010548047A
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English (en)
Japanese (ja)
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JP2011514633A (ja
JP5408674B2 (ja
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Priority claimed from PCT/EP2009/050843 external-priority patent/WO2009106397A1/en
Publication of JP2011514633A publication Critical patent/JP2011514633A/ja
Publication of JP2011514633A5 publication Critical patent/JP2011514633A5/ja
Application granted granted Critical
Publication of JP5408674B2 publication Critical patent/JP5408674B2/ja
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JP2010548047A 2008-02-26 2009-01-26 投影レンズ構成体 Active JP5408674B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3157308P 2008-02-26 2008-02-26
US61/031,573 2008-02-26
PCT/EP2009/050843 WO2009106397A1 (en) 2008-02-26 2009-01-26 Projection lens arrangement

Publications (3)

Publication Number Publication Date
JP2011514633A JP2011514633A (ja) 2011-05-06
JP2011514633A5 true JP2011514633A5 (enExample) 2012-03-15
JP5408674B2 JP5408674B2 (ja) 2014-02-05

Family

ID=40578320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010548047A Active JP5408674B2 (ja) 2008-02-26 2009-01-26 投影レンズ構成体

Country Status (7)

Country Link
US (1) US20090261267A1 (enExample)
EP (1) EP2250660A1 (enExample)
JP (1) JP5408674B2 (enExample)
KR (1) KR101481950B1 (enExample)
CN (1) CN102017052B (enExample)
TW (1) TWI480914B (enExample)
WO (1) WO2009106397A1 (enExample)

Families Citing this family (37)

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Publication number Priority date Publication date Assignee Title
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
EP3144955A1 (en) 2009-05-20 2017-03-22 Mapper Lithography IP B.V. Method for exposing a wafer
CN102460633B (zh) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
WO2010134017A1 (en) 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
TWI492261B (zh) * 2009-10-09 2015-07-11 Mapper Lithography Ip Bv 提高完整性的投影透鏡組件
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
KR102072200B1 (ko) 2011-04-22 2020-01-31 에이에스엠엘 네델란즈 비.브이. 리소그래피 머신들의 클러스터를 위한 네트워크 아키텍처 및 프로토콜
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
JP5777445B2 (ja) * 2011-08-12 2015-09-09 キヤノン株式会社 荷電粒子線描画装置及び物品の製造方法
CN103959919A (zh) 2011-09-28 2014-07-30 迈普尔平版印刷Ip有限公司 等离子产生器
USRE49732E1 (en) 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
JP6014342B2 (ja) 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
WO2013171229A1 (en) 2012-05-14 2013-11-21 Mapper Lithography Ip B.V. Charged particle lithography system and beam generator
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN105745577B (zh) 2013-09-07 2018-01-23 迈普尔平版印刷Ip有限公司 目标处理单元
RU2644388C2 (ru) 2013-11-14 2018-02-12 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Многоэлектродная охлаждаемая конструкция
CN104715987B (zh) * 2013-12-13 2017-02-15 中国科学院大连化学物理研究所 一种紧凑型偏转会聚离子束的静电透镜
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9881764B2 (en) * 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6568627B2 (ja) * 2018-07-10 2019-08-28 株式会社日立ハイテクノロジーズ イオンビーム装置
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
IL300807A (en) 2020-09-17 2023-04-01 Asml Netherlands Bv Charged particle evaluation tool test method
IL303983A (en) * 2020-12-23 2023-08-01 Asml Netherlands Bv Charged particle optical device
EP4020516A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JP3796317B2 (ja) * 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
US6989546B2 (en) * 1998-08-19 2006-01-24 Ims-Innenmikrofabrikations Systeme Gmbh Particle multibeam lithography
AU2002342349A1 (en) * 2001-11-07 2003-05-19 Applied Materials, Inc. Maskless printer using photoelectric conversion of a light beam array
JP2003331774A (ja) * 2002-05-16 2003-11-21 Toshiba Corp 電子ビーム装置およびその装置を用いたデバイス製造方法
CN101414129B (zh) * 2002-10-30 2012-11-28 迈普尔平版印刷Ip有限公司 电子束曝光系统
JP2005032837A (ja) * 2003-07-08 2005-02-03 Canon Inc 荷電粒子描画方法及び該方法を用いたデバイス製造方法
GB0425290D0 (en) 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system

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