TWI480914B - 末端模組及帶電粒子的多子束系統 - Google Patents

末端模組及帶電粒子的多子束系統 Download PDF

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Publication number
TWI480914B
TWI480914B TW098103622A TW98103622A TWI480914B TW I480914 B TWI480914 B TW I480914B TW 098103622 A TW098103622 A TW 098103622A TW 98103622 A TW98103622 A TW 98103622A TW I480914 B TWI480914 B TW I480914B
Authority
TW
Taiwan
Prior art keywords
projection lens
end module
array
beamlet
sheet
Prior art date
Application number
TW098103622A
Other languages
English (en)
Chinese (zh)
Other versions
TW200939282A (en
Inventor
Marco Jan-Jaco Wieland
Bert Jan Kampherbeek
Veen Alexander Hendrik Vincent Van
Pieter Kruit
Stijn Willem Herman Karel Steenbrink
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW200939282A publication Critical patent/TW200939282A/zh
Application granted granted Critical
Publication of TWI480914B publication Critical patent/TWI480914B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
TW098103622A 2008-02-26 2009-02-05 末端模組及帶電粒子的多子束系統 TWI480914B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3157308P 2008-02-26 2008-02-26

Publications (2)

Publication Number Publication Date
TW200939282A TW200939282A (en) 2009-09-16
TWI480914B true TWI480914B (zh) 2015-04-11

Family

ID=40578320

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098103622A TWI480914B (zh) 2008-02-26 2009-02-05 末端模組及帶電粒子的多子束系統

Country Status (7)

Country Link
US (1) US20090261267A1 (enExample)
EP (1) EP2250660A1 (enExample)
JP (1) JP5408674B2 (enExample)
KR (1) KR101481950B1 (enExample)
CN (1) CN102017052B (enExample)
TW (1) TWI480914B (enExample)
WO (1) WO2009106397A1 (enExample)

Families Citing this family (37)

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NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
JP5801289B2 (ja) 2009-05-20 2015-10-28 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフシステムのためのパターンデータ変換
CN102460632B (zh) 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
KR101636523B1 (ko) 2009-05-20 2016-07-06 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
TWI492261B (zh) * 2009-10-09 2015-07-11 Mapper Lithography Ip Bv 提高完整性的投影透鏡組件
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
JP5777445B2 (ja) * 2011-08-12 2015-09-09 キヤノン株式会社 荷電粒子線描画装置及び物品の製造方法
WO2013045636A2 (en) 2011-09-28 2013-04-04 Mapper Lithography Ip B.V. Plasma generator
USRE49732E1 (en) 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
JP6014342B2 (ja) * 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
NL2010797C2 (en) 2012-05-14 2014-08-21 Mapper Lithography Ip Bv Charged particle lithography system and beam generator.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
NL2013438B1 (en) 2013-09-07 2016-05-18 Mapper Lithography Ip Bv Target processing unit.
WO2015071440A1 (en) 2013-11-14 2015-05-21 Mapper Lithography Ip B.V. Electrode cooling arrangement
CN104715987B (zh) * 2013-12-13 2017-02-15 中国科学院大连化学物理研究所 一种紧凑型偏转会聚离子束的静电透镜
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
JP2017513036A (ja) 2014-11-14 2017-05-25 マッパー・リソグラフィー・アイピー・ビー．ブイ． 貨物固定システムおよびリソグラフィシステム内で基板を移送するための方法
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9881764B2 (en) * 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6568627B2 (ja) * 2018-07-10 2019-08-28 株式会社日立ハイテクノロジーズ イオンビーム装置
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
KR20230067620A (ko) 2020-09-17 2023-05-16 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 툴, 검사 방법
EP4020516A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
WO2022136064A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device

Citations (4)

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US5905267A (en) * 1996-06-12 1999-05-18 Canon Kabushiki Kaisha Electron beam exposure apparatus and method of controlling same
US20040141169A1 (en) * 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
US20050006603A1 (en) * 2003-07-08 2005-01-13 Canon Kabushiki Kaisha Charged particle beam exposure method, charged particle beam exposure apparatus, and device manufacturing method
CN101084567A (zh) * 2004-11-17 2007-12-05 Nfab有限公司 聚焦掩模

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JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー
WO2003040829A2 (en) * 2001-11-07 2003-05-15 Applied Materials, Inc. Maskless printer using photoelectric conversion of a light beam array
JP2003331774A (ja) * 2002-05-16 2003-11-21 Toshiba Corp 電子ビーム装置およびその装置を用いたデバイス製造方法
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905267A (en) * 1996-06-12 1999-05-18 Canon Kabushiki Kaisha Electron beam exposure apparatus and method of controlling same
US20040141169A1 (en) * 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
US6897458B2 (en) * 2002-10-30 2005-05-24 Mapper Lithography Ip B.V. Electron beam exposure system
US20050006603A1 (en) * 2003-07-08 2005-01-13 Canon Kabushiki Kaisha Charged particle beam exposure method, charged particle beam exposure apparatus, and device manufacturing method
US7049610B2 (en) * 2003-07-08 2006-05-23 Canon Kabushiki Kaisha Charged particle beam exposure method, charged particle beam exposure apparatus, and device manufacturing method
CN101084567A (zh) * 2004-11-17 2007-12-05 Nfab有限公司 聚焦掩模

Also Published As

Publication number Publication date
JP5408674B2 (ja) 2014-02-05
WO2009106397A1 (en) 2009-09-03
KR20110004371A (ko) 2011-01-13
EP2250660A1 (en) 2010-11-17
CN102017052A (zh) 2011-04-13
CN102017052B (zh) 2013-09-04
KR101481950B1 (ko) 2015-01-14
US20090261267A1 (en) 2009-10-22
TW200939282A (en) 2009-09-16
JP2011514633A (ja) 2011-05-06

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