KR101481950B1 - 투사 렌즈 배열체 - Google Patents

투사 렌즈 배열체 Download PDF

Info

Publication number
KR101481950B1
KR101481950B1 KR1020107021522A KR20107021522A KR101481950B1 KR 101481950 B1 KR101481950 B1 KR 101481950B1 KR 1020107021522 A KR1020107021522 A KR 1020107021522A KR 20107021522 A KR20107021522 A KR 20107021522A KR 101481950 B1 KR101481950 B1 KR 101481950B1
Authority
KR
South Korea
Prior art keywords
projection lens
plate
array
beamlets
delete delete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107021522A
Other languages
English (en)
Korean (ko)
Other versions
KR20110004371A (ko
Inventor
마르코 얀 자코 비란트
베르트 얀 캄퍼벡
알렉산더 헨드릭 빈센트 반 빈
피터 크룻
스틴 윌리엄 헤르만 카를 스틴브린크
Original Assignee
마퍼 리쏘그라피 아이피 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마퍼 리쏘그라피 아이피 비.브이. filed Critical 마퍼 리쏘그라피 아이피 비.브이.
Publication of KR20110004371A publication Critical patent/KR20110004371A/ko
Application granted granted Critical
Publication of KR101481950B1 publication Critical patent/KR101481950B1/ko
Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
KR1020107021522A 2008-02-26 2009-01-26 투사 렌즈 배열체 Active KR101481950B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3157308P 2008-02-26 2008-02-26
US61/031,573 2008-02-26
PCT/EP2009/050843 WO2009106397A1 (en) 2008-02-26 2009-01-26 Projection lens arrangement

Publications (2)

Publication Number Publication Date
KR20110004371A KR20110004371A (ko) 2011-01-13
KR101481950B1 true KR101481950B1 (ko) 2015-01-14

Family

ID=40578320

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107021522A Active KR101481950B1 (ko) 2008-02-26 2009-01-26 투사 렌즈 배열체

Country Status (7)

Country Link
US (1) US20090261267A1 (enExample)
EP (1) EP2250660A1 (enExample)
JP (1) JP5408674B2 (enExample)
KR (1) KR101481950B1 (enExample)
CN (1) CN102017052B (enExample)
TW (1) TWI480914B (enExample)
WO (1) WO2009106397A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
JP5801289B2 (ja) 2009-05-20 2015-10-28 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフシステムのためのパターンデータ変換
CN102460632B (zh) 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
KR101636523B1 (ko) 2009-05-20 2016-07-06 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
TWI492261B (zh) * 2009-10-09 2015-07-11 Mapper Lithography Ip Bv 提高完整性的投影透鏡組件
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
TWI486723B (zh) 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
JP5777445B2 (ja) * 2011-08-12 2015-09-09 キヤノン株式会社 荷電粒子線描画装置及び物品の製造方法
WO2013045636A2 (en) 2011-09-28 2013-04-04 Mapper Lithography Ip B.V. Plasma generator
USRE49732E1 (en) 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
JP6014342B2 (ja) * 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
NL2010797C2 (en) 2012-05-14 2014-08-21 Mapper Lithography Ip Bv Charged particle lithography system and beam generator.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
NL2013438B1 (en) 2013-09-07 2016-05-18 Mapper Lithography Ip Bv Target processing unit.
WO2015071440A1 (en) 2013-11-14 2015-05-21 Mapper Lithography Ip B.V. Electrode cooling arrangement
CN104715987B (zh) * 2013-12-13 2017-02-15 中国科学院大连化学物理研究所 一种紧凑型偏转会聚离子束的静电透镜
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
JP2017513036A (ja) 2014-11-14 2017-05-25 マッパー・リソグラフィー・アイピー・ビー．ブイ． 貨物固定システムおよびリソグラフィシステム内で基板を移送するための方法
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9881764B2 (en) * 2016-01-09 2018-01-30 Kla-Tencor Corporation Heat-spreading blanking system for high throughput electron beam apparatus
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6568627B2 (ja) * 2018-07-10 2019-08-28 株式会社日立ハイテクノロジーズ イオンビーム装置
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
KR20230067620A (ko) 2020-09-17 2023-05-16 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 툴, 검사 방법
EP4020516A1 (en) * 2020-12-23 2022-06-29 ASML Netherlands B.V. Charged particle optical device, objective lens assembly, detector, detector array, and methods
WO2022136064A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040141169A1 (en) 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
WO2006054086A2 (en) * 2004-11-17 2006-05-26 Nfab Limited Focussing mask

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796317B2 (ja) * 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー
WO2003040829A2 (en) * 2001-11-07 2003-05-15 Applied Materials, Inc. Maskless printer using photoelectric conversion of a light beam array
JP2003331774A (ja) * 2002-05-16 2003-11-21 Toshiba Corp 電子ビーム装置およびその装置を用いたデバイス製造方法
JP2005032837A (ja) * 2003-07-08 2005-02-03 Canon Inc 荷電粒子描画方法及び該方法を用いたデバイス製造方法
US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040141169A1 (en) 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
WO2006054086A2 (en) * 2004-11-17 2006-05-26 Nfab Limited Focussing mask

Also Published As

Publication number Publication date
JP5408674B2 (ja) 2014-02-05
WO2009106397A1 (en) 2009-09-03
KR20110004371A (ko) 2011-01-13
EP2250660A1 (en) 2010-11-17
CN102017052A (zh) 2011-04-13
CN102017052B (zh) 2013-09-04
TWI480914B (zh) 2015-04-11
US20090261267A1 (en) 2009-10-22
TW200939282A (en) 2009-09-16
JP2011514633A (ja) 2011-05-06

Similar Documents

Publication Publication Date Title
US8089056B2 (en) Projection lens arrangement
JP5408674B2 (ja) 投影レンズ構成体
EP2402979B1 (en) Projection lens arrangement
US8445869B2 (en) Projection lens arrangement
US8502176B2 (en) Imaging system
US8890094B2 (en) Projection lens arrangement
NL2002031C (en) Patterned beamlet system.
GB2459279A (en) A projection system for charged particle multi-beams

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100927

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20140123

Comment text: Request for Examination of Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20141023

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20150107

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20150108

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20171227

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20171227

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20181221

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20181221

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20201229

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20211230

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20221228

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20231228

Start annual number: 10

End annual number: 10