JP2012501540A5 - - Google Patents

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Publication number
JP2012501540A5
JP2012501540A5 JP2011524970A JP2011524970A JP2012501540A5 JP 2012501540 A5 JP2012501540 A5 JP 2012501540A5 JP 2011524970 A JP2011524970 A JP 2011524970A JP 2011524970 A JP2011524970 A JP 2011524970A JP 2012501540 A5 JP2012501540 A5 JP 2012501540A5
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JP
Japan
Prior art keywords
etched
silicon
substrate
opening
range
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JP2011524970A
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English (en)
Japanese (ja)
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JP2012501540A (ja
JP5674663B2 (ja
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Priority claimed from US12/229,946 external-priority patent/US9039908B2/en
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Publication of JP2012501540A publication Critical patent/JP2012501540A/ja
Publication of JP2012501540A5 publication Critical patent/JP2012501540A5/ja
Application granted granted Critical
Publication of JP5674663B2 publication Critical patent/JP5674663B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011524970A 2008-08-27 2009-08-11 スルー基板ビアの側壁及び他の深堀りエッチングされた構造を平滑化するためのポストエッチング反応性プラズマミーリング Expired - Fee Related JP5674663B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/229,946 US9039908B2 (en) 2008-08-27 2008-08-27 Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features
US12/229,946 2008-08-27
PCT/US2009/004613 WO2010027400A2 (en) 2008-08-27 2009-08-11 Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features

Publications (3)

Publication Number Publication Date
JP2012501540A JP2012501540A (ja) 2012-01-19
JP2012501540A5 true JP2012501540A5 (enExample) 2012-09-27
JP5674663B2 JP5674663B2 (ja) 2015-02-25

Family

ID=41725875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011524970A Expired - Fee Related JP5674663B2 (ja) 2008-08-27 2009-08-11 スルー基板ビアの側壁及び他の深堀りエッチングされた構造を平滑化するためのポストエッチング反応性プラズマミーリング

Country Status (6)

Country Link
US (1) US9039908B2 (enExample)
JP (1) JP5674663B2 (enExample)
KR (1) KR101468614B1 (enExample)
CN (1) CN102165565B (enExample)
TW (1) TWI494996B (enExample)
WO (1) WO2010027400A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8987140B2 (en) 2011-04-25 2015-03-24 Applied Materials, Inc. Methods for etching through-silicon vias with tunable profile angles
KR101867998B1 (ko) 2011-06-14 2018-06-15 삼성전자주식회사 패턴 형성 방법
US9023227B2 (en) 2011-06-30 2015-05-05 Applied Materials, Inc. Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber
US9305810B2 (en) 2011-06-30 2016-04-05 Applied Materials, Inc. Method and apparatus for fast gas exchange, fast gas switching, and programmable gas delivery
CN103159163B (zh) * 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
US9041210B2 (en) 2012-06-19 2015-05-26 International Business Machines Corporation Through silicon via wafer and methods of manufacturing
US9159574B2 (en) * 2012-08-27 2015-10-13 Applied Materials, Inc. Method of silicon etch for trench sidewall smoothing
CN103887164B (zh) * 2012-12-20 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 一种深硅刻蚀方法
US20150087144A1 (en) * 2013-09-26 2015-03-26 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method of manufacturing metal gate semiconductor device
KR102148336B1 (ko) 2013-11-26 2020-08-27 삼성전자주식회사 표면 처리 방법, 반도체 제조 방법 및 이에 의해 제조된 반도체 장치
CN104752331B (zh) * 2013-12-31 2018-08-07 中微半导体设备(上海)有限公司 一种硅通孔刻蚀方法
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
TWI614806B (zh) * 2015-12-16 2018-02-11 提升矽晶穿孔製程速度之方法
US9892969B2 (en) * 2016-05-11 2018-02-13 Semiconductor Components Industries, Llc Process of forming an electronic device
GB201608926D0 (en) * 2016-05-20 2016-07-06 Spts Technologies Ltd Method for plasma etching a workpiece
GB201620680D0 (en) * 2016-12-05 2017-01-18 Spts Technologies Ltd Method of smoothing a surface
JP7281741B2 (ja) * 2019-08-23 2023-05-26 パナソニックＩｐマネジメント株式会社 素子チップのスムージング方法および素子チップの製造方法
KR102297835B1 (ko) * 2019-11-21 2021-09-02 (재)한국나노기술원 테이퍼 형태의 경사벽을 갖는 비아 홀 제조 방법
GB202020822D0 (en) * 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus
KR20250083491A (ko) * 2022-09-29 2025-06-10 램 리써치 코포레이션 측벽 오염물 및 거칠기를 감소시키기 위한 포스트 에칭 플라즈마
GB202319985D0 (en) * 2023-12-22 2024-02-07 Spts Technologies Ltd Methods of treating a semiconductor substrate and apparatus
WO2025197721A1 (ja) * 2024-03-22 2025-09-25 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
CN120809574B (zh) * 2025-09-16 2025-11-21 上海邦芯半导体科技有限公司 硬掩膜刻蚀方法及刻蚀设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900007687B1 (ko) 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JPH0689880A (ja) * 1992-09-08 1994-03-29 Tokyo Electron Ltd エッチング装置
JP3217875B2 (ja) * 1992-11-05 2001-10-15 株式会社日立製作所 エッチング装置
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
JP4548873B2 (ja) * 1998-07-08 2010-09-22 株式会社アルバック ＴｉＮ層を等方性エッチングなしにアッシングするドライアッシング方法
US6593244B1 (en) * 2000-09-11 2003-07-15 Applied Materials Inc. Process for etching conductors at high etch rates
US6566270B1 (en) * 2000-09-15 2003-05-20 Applied Materials Inc. Integration of silicon etch and chamber cleaning processes
KR100403130B1 (ko) * 2001-12-27 2003-10-30 동부전자 주식회사 반도체 소자용 금속 배선의 클리닝 방법
US6846746B2 (en) 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
JP2004326083A (ja) * 2003-04-09 2004-11-18 Seiko Instruments Inc ミラーの製造方法とミラーデバイス
US20050170670A1 (en) * 2003-11-17 2005-08-04 King William P. Patterning of sacrificial materials
JP4653470B2 (ja) 2004-12-02 2011-03-16 株式会社アルバック エッチング方法
US7481943B2 (en) * 2005-08-08 2009-01-27 Silverbrook Research Pty Ltd Method suitable for etching hydrophillic trenches in a substrate
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
JP5143382B2 (ja) * 2006-07-27 2013-02-13 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
CN101148765B (zh) 2006-09-19 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 硅片蚀刻方法

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