CN102165565B - 用以使穿过衬底的过孔侧壁及其它深蚀刻特征部光滑的后蚀刻反应等离子体研磨 - Google Patents

用以使穿过衬底的过孔侧壁及其它深蚀刻特征部光滑的后蚀刻反应等离子体研磨 Download PDF

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Publication number
CN102165565B
CN102165565B CN200980133906.8A CN200980133906A CN102165565B CN 102165565 B CN102165565 B CN 102165565B CN 200980133906 A CN200980133906 A CN 200980133906A CN 102165565 B CN102165565 B CN 102165565B
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features
silicon
power
substrate
scope
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Expired - Fee Related
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Chinese (zh)
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CN102165565A (zh
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乔恩·法尔
夏尔马·帕马斯
科哈利德·西拉朱迪茵
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200980133906.8A 2008-08-27 2009-08-11 用以使穿过衬底的过孔侧壁及其它深蚀刻特征部光滑的后蚀刻反应等离子体研磨 Expired - Fee Related CN102165565B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/229,946 2008-08-27
US12/229,946 US9039908B2 (en) 2008-08-27 2008-08-27 Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features
PCT/US2009/004613 WO2010027400A2 (en) 2008-08-27 2009-08-11 Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features

Publications (2)

Publication Number Publication Date
CN102165565A CN102165565A (zh) 2011-08-24
CN102165565B true CN102165565B (zh) 2015-08-12

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CN200980133906.8A Expired - Fee Related CN102165565B (zh) 2008-08-27 2009-08-11 用以使穿过衬底的过孔侧壁及其它深蚀刻特征部光滑的后蚀刻反应等离子体研磨

Country Status (6)

Country Link
US (1) US9039908B2 (enExample)
JP (1) JP5674663B2 (enExample)
KR (1) KR101468614B1 (enExample)
CN (1) CN102165565B (enExample)
TW (1) TWI494996B (enExample)
WO (1) WO2010027400A2 (enExample)

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KR101867998B1 (ko) * 2011-06-14 2018-06-15 삼성전자주식회사 패턴 형성 방법
KR101932250B1 (ko) 2011-06-30 2019-03-20 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
US9023227B2 (en) 2011-06-30 2015-05-05 Applied Materials, Inc. Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber
CN103159163B (zh) 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
US9041210B2 (en) 2012-06-19 2015-05-26 International Business Machines Corporation Through silicon via wafer and methods of manufacturing
US9159574B2 (en) * 2012-08-27 2015-10-13 Applied Materials, Inc. Method of silicon etch for trench sidewall smoothing
CN103887164B (zh) * 2012-12-20 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 一种深硅刻蚀方法
US20150087144A1 (en) * 2013-09-26 2015-03-26 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method of manufacturing metal gate semiconductor device
KR102148336B1 (ko) 2013-11-26 2020-08-27 삼성전자주식회사 표면 처리 방법, 반도체 제조 방법 및 이에 의해 제조된 반도체 장치
CN104752331B (zh) * 2013-12-31 2018-08-07 中微半导体设备(上海)有限公司 一种硅通孔刻蚀方法
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
TWI614806B (zh) * 2015-12-16 2018-02-11 提升矽晶穿孔製程速度之方法
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JP7281741B2 (ja) * 2019-08-23 2023-05-26 パナソニックＩｐマネジメント株式会社 素子チップのスムージング方法および素子チップの製造方法
KR102297835B1 (ko) * 2019-11-21 2021-09-02 (재)한국나노기술원 테이퍼 형태의 경사벽을 갖는 비아 홀 제조 방법
GB202020822D0 (en) * 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus
KR20250083491A (ko) * 2022-09-29 2025-06-10 램 리써치 코포레이션 측벽 오염물 및 거칠기를 감소시키기 위한 포스트 에칭 플라즈마
GB202319985D0 (en) * 2023-12-22 2024-02-07 Spts Technologies Ltd Methods of treating a semiconductor substrate and apparatus
WO2025197721A1 (ja) * 2024-03-22 2025-09-25 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
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Also Published As

Publication number Publication date
KR101468614B1 (ko) 2014-12-04
CN102165565A (zh) 2011-08-24
US20100055400A1 (en) 2010-03-04
JP5674663B2 (ja) 2015-02-25
US9039908B2 (en) 2015-05-26
WO2010027400A2 (en) 2010-03-11
TW201009933A (en) 2010-03-01
JP2012501540A (ja) 2012-01-19
WO2010027400A3 (en) 2010-04-29
KR20110052723A (ko) 2011-05-18
TWI494996B (zh) 2015-08-01

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