JP2019220681A5 - - Google Patents
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- JP2019220681A5 JP2019220681A5 JP2019090801A JP2019090801A JP2019220681A5 JP 2019220681 A5 JP2019220681 A5 JP 2019220681A5 JP 2019090801 A JP2019090801 A JP 2019090801A JP 2019090801 A JP2019090801 A JP 2019090801A JP 2019220681 A5 JP2019220681 A5 JP 2019220681A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- film
- processing apparatus
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/010,800 US10781519B2 (en) | 2018-06-18 | 2018-06-18 | Method and apparatus for processing substrate |
| US16/010,800 | 2018-06-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019220681A JP2019220681A (ja) | 2019-12-26 |
| JP2019220681A5 true JP2019220681A5 (enExample) | 2022-05-25 |
| JP7323330B2 JP7323330B2 (ja) | 2023-08-08 |
Family
ID=68839187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019090801A Active JP7323330B2 (ja) | 2018-06-18 | 2019-05-13 | 基板処理方法および基板処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10781519B2 (enExample) |
| JP (1) | JP7323330B2 (enExample) |
| KR (1) | KR102734223B1 (enExample) |
| CN (1) | CN110616416A (enExample) |
| TW (1) | TWI807049B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019199834A1 (en) | 2018-04-09 | 2019-10-17 | Tokyo Electron Limited | Method of forming a semiconductor device with air gaps for low capacitance interconnects |
| US10896823B2 (en) * | 2018-11-21 | 2021-01-19 | Thomas E. Seidel | Limited dose atomic layer processes for localizing coatings on non-planar surfaces |
| JP7285152B2 (ja) * | 2019-07-08 | 2023-06-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7629875B2 (ja) * | 2020-01-30 | 2025-02-14 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びエッチング方法 |
| US20240404837A1 (en) * | 2023-05-30 | 2024-12-05 | Applied Materials, Inc. | Halogen-free etching of silicon nitride |
| US20250364210A1 (en) * | 2024-05-24 | 2025-11-27 | Applied Materials, Inc. | Pecvd trench bottom profile control with pulsed dual rf plasma |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020004309A1 (en) * | 1990-07-31 | 2002-01-10 | Kenneth S. Collins | Processes used in an inductively coupled plasma reactor |
| DE19651029C2 (de) * | 1996-12-09 | 1999-12-02 | Ibm | Kalibrierstandard für Profilometer und Herstellverfahren |
| US6794290B1 (en) * | 2001-12-03 | 2004-09-21 | Novellus Systems, Inc. | Method of chemical modification of structure topography |
| US6852996B2 (en) * | 2002-09-25 | 2005-02-08 | Stmicroelectronics, Inc. | Organic semiconductor sensor device |
| US7323231B2 (en) * | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
| US7476621B1 (en) * | 2003-12-10 | 2009-01-13 | Novellus Systems, Inc. | Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill |
| US8974868B2 (en) * | 2005-03-21 | 2015-03-10 | Tokyo Electron Limited | Post deposition plasma cleaning system and method |
| US7341959B2 (en) * | 2005-03-21 | 2008-03-11 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
| US8815014B2 (en) * | 2005-11-18 | 2014-08-26 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
| US7649239B2 (en) * | 2006-05-04 | 2010-01-19 | Intel Corporation | Dielectric spacers for metal interconnects and method to form the same |
| US20070298583A1 (en) * | 2006-06-27 | 2007-12-27 | Macronix International Co., Ltd. | Method for forming a shallow trench isolation region |
| JP4916257B2 (ja) * | 2006-09-06 | 2012-04-11 | 東京エレクトロン株式会社 | 酸化膜の形成方法、酸化膜の形成装置及びプログラム |
| WO2008153674A1 (en) * | 2007-06-09 | 2008-12-18 | Boris Kobrin | Method and apparatus for anisotropic etching |
| US8129288B2 (en) * | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
| US7816278B2 (en) * | 2008-03-28 | 2010-10-19 | Tokyo Electron Limited | In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition |
| JP5439771B2 (ja) * | 2008-09-05 | 2014-03-12 | 東京エレクトロン株式会社 | 成膜装置 |
| US8039966B2 (en) * | 2009-09-03 | 2011-10-18 | International Business Machines Corporation | Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects |
| US9257274B2 (en) * | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9564312B2 (en) * | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| FR3032436B1 (fr) | 2015-02-10 | 2019-08-30 | Louis Vuitton Malletier | Dispositif de conditionnement pour un produit a distribuer |
| CN106148918B (zh) * | 2015-03-26 | 2018-08-07 | 理想晶延半导体设备（上海）有限公司 | 半导体处理设备 |
| US9716005B1 (en) | 2016-03-18 | 2017-07-25 | Applied Materials, Inc. | Plasma poisoning to enable selective deposition |
| US10037884B2 (en) * | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| JP6559107B2 (ja) * | 2016-09-09 | 2019-08-14 | 東京エレクトロン株式会社 | 成膜方法および成膜システム |
| KR102112705B1 (ko) * | 2016-12-09 | 2020-05-21 | 주식회사 원익아이피에스 | 박막 증착 방법 |
| TWI805162B (zh) * | 2017-04-18 | 2023-06-11 | 日商東京威力科創股份有限公司 | 被處理體之處理裝置 |
| TWI773839B (zh) * | 2017-10-14 | 2022-08-11 | 美商應用材料股份有限公司 | 用於beol 互連的ald 銅與高溫pvd 銅沉積的集成 |
| US10515815B2 (en) * | 2017-11-21 | 2019-12-24 | Lam Research Corporation | Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation |
-
2018
- 2018-06-18 US US16/010,800 patent/US10781519B2/en active Active
-
2019
- 2019-05-13 JP JP2019090801A patent/JP7323330B2/ja active Active
- 2019-06-17 KR KR1020190071720A patent/KR102734223B1/ko active Active
- 2019-06-18 TW TW108121136A patent/TWI807049B/zh not_active IP Right Cessation
- 2019-06-18 CN CN201910525969.3A patent/CN110616416A/zh active Pending
-
2020
- 2020-08-21 US US17/000,090 patent/US12325919B2/en active Active
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