TWI807049B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

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TWI807049B
TWI807049B TW108121136A TW108121136A TWI807049B TW I807049 B TWI807049 B TW I807049B TW 108121136 A TW108121136 A TW 108121136A TW 108121136 A TW108121136 A TW 108121136A TW I807049 B TWI807049 B TW I807049B
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substrate
chamber
film
processing
treatment
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TW108121136A
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Chinese (zh)
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TW202002014A (zh
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田端雅弘
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日商東京威力科創股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01—ELECTRIC ELEMENTS
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    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790372B (zh) 2018-04-09 2023-01-21 日商東京威力科創股份有限公司 具有用於低電容內連線之氣隙的半導體元件形成方法
US10896823B2 (en) * 2018-11-21 2021-01-19 Thomas E. Seidel Limited dose atomic layer processes for localizing coatings on non-planar surfaces
JP7285152B2 (ja) * 2019-07-08 2023-06-01 東京エレクトロン株式会社 プラズマ処理装置
WO2021152879A1 (ja) * 2020-01-30 2021-08-05 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びエッチング方法
KR102959712B1 (ko) * 2020-10-14 2026-04-30 에이피시스템 주식회사 기판 처리 장치 및 이를 이용한 박막 증착 방법
KR20230065900A (ko) * 2021-11-05 2023-05-12 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 시스템
US12690403B2 (en) 2023-05-30 2026-07-21 Applied Materials, Inc. Halogen-free etching of silicon nitride
CN118166339B (zh) * 2024-01-31 2026-04-17 温州核芯智存科技有限公司 一种原子沉积腔室、设备、设备制造方法及电容制备方法
US20250364210A1 (en) * 2024-05-24 2025-11-27 Applied Materials, Inc. Pecvd trench bottom profile control with pulsed dual rf plasma
WO2026088911A1 (ja) * 2024-10-22 2026-04-30 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード フッ素添加シリコン酸化膜を形成させるための組成物及び方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180061628A1 (en) * 2016-08-31 2018-03-01 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020004309A1 (en) * 1990-07-31 2002-01-10 Kenneth S. Collins Processes used in an inductively coupled plasma reactor
DE19651029C2 (de) * 1996-12-09 1999-12-02 Ibm Kalibrierstandard für Profilometer und Herstellverfahren
US6794290B1 (en) * 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
US6852996B2 (en) * 2002-09-25 2005-02-08 Stmicroelectronics, Inc. Organic semiconductor sensor device
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7476621B1 (en) * 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US8974868B2 (en) * 2005-03-21 2015-03-10 Tokyo Electron Limited Post deposition plasma cleaning system and method
US7341959B2 (en) * 2005-03-21 2008-03-11 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US8815014B2 (en) * 2005-11-18 2014-08-26 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US7649239B2 (en) * 2006-05-04 2010-01-19 Intel Corporation Dielectric spacers for metal interconnects and method to form the same
US20070298583A1 (en) * 2006-06-27 2007-12-27 Macronix International Co., Ltd. Method for forming a shallow trench isolation region
JP4916257B2 (ja) * 2006-09-06 2012-04-11 東京エレクトロン株式会社 酸化膜の形成方法、酸化膜の形成装置及びプログラム
WO2008153674A1 (en) * 2007-06-09 2008-12-18 Boris Kobrin Method and apparatus for anisotropic etching
US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US7816278B2 (en) * 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
JP5439771B2 (ja) * 2008-09-05 2014-03-12 東京エレクトロン株式会社 成膜装置
US8039966B2 (en) * 2009-09-03 2011-10-18 International Business Machines Corporation Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects
US9257274B2 (en) * 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9564312B2 (en) * 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
FR3032436B1 (fr) 2015-02-10 2019-08-30 Louis Vuitton Malletier Dispositif de conditionnement pour un produit a distribuer
CN106148918B (zh) * 2015-03-26 2018-08-07 理想晶延半导体设备（上海）有限公司 半导体处理设备
US9716005B1 (en) 2016-03-18 2017-07-25 Applied Materials, Inc. Plasma poisoning to enable selective deposition
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
KR102112705B1 (ko) 2016-12-09 2020-05-21 주식회사 원익아이피에스 박막 증착 방법
TWI805162B (zh) * 2017-04-18 2023-06-11 日商東京威力科創股份有限公司 被處理體之處理裝置
TWI773839B (zh) * 2017-10-14 2022-08-11 美商應用材料股份有限公司 用於beol 互連的ald 銅與高溫pvd 銅沉積的集成
US10515815B2 (en) * 2017-11-21 2019-12-24 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180061628A1 (en) * 2016-08-31 2018-03-01 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer

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